AP18N20GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Simple Drive Requirement Fast Switching Characteristic 200V RDS(ON) 170m ID G RoHS Compliant & Halogen-Free BVDSS 18A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220(P) S The TO-220 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18N20GS) are available for low-profile applications. G D S TO-263(S) Absolute Maximum Ratings Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 18 A ID@TC=100 Continuous Drain Current, VGS @ 10V 9.5 A Symbol Parameter 1 IDM Pulsed Drain Current 60 A PD@TC=25 Total Power Dissipation 89 W Linear Derating Factor 0.7 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 1.4 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 40 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 /W Data & specifications subject to change without notice 1 201001113 AP18N20GS/P-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 200 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.25 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A - - 170 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=10A - 9.5 - S IDSS Drain-Source Leakage Current IGSS VGS=0V, ID=1mA Min. VDS=200V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=160V, VGS=0V - - 250 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA 2 Qg Total Gate Charge ID=10A - 19 30 nC Qgs Gate-Source Charge VDS=160V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC 2 td(on) Turn-on Delay Time VDD=100V - 9 - ns tr Rise Time ID=11A - 21 - ns td(off) Turn-off Delay Time RG=9.1,VGS=10V - 25 - ns tf Fall Time RD=9.1 - 19 - ns Ciss Input Capacitance VGS=0V - 1065 1700 pF Coss Output Capacitance VDS=25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 3 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Min. Typ. Max. Units Source-Drain Diode Symbol Parameter 2 Test Conditions VSD Forward On Voltage IS=10A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=10A, VGS=0V - 180 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 1150 - nC Notes: 1.Pulse width limited by Maximum junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP18N20GS/P-HF 30 40 16 V 12 V 10 V 8.0 V 30 o 16 V 12 V 10 V 8.0 V T C = 150 C V G = 6 .0V 20 ID , Drain Current (A) ID , Drain Current (A) T C = 25 o C 20 V G = 6 .0V 10 10 0 0 0 4 8 12 0 16 Fig 1. Typical Output Characteristics 8 12 16 20 Fig 2. Typical Output Characteristics 2.8 240 I D =8A V G =10V I D =5A o T C =25 C Normalized RDS(ON) 2.4 210 RDS(ON) (m) 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 180 2.0 1.6 1.2 150 0.8 0.4 120 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 14 12 Normalized VGS(th) (V) 1.3 IS(A) 10 T j =150 o C 8 T j =25 o C 6 4 1.1 0.9 0.7 2 0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP18N20GS/P-HF f=1.0MHz 14 10000 I D = 10 A V DS = 100 V V DS = 130 V V DS = 160 V 10 C iss 1000 C (pF) VGS , Gate to Source Voltage (V) 12 8 C oss 100 6 4 10 2 C rss 0 1 0 4 8 12 16 20 24 1 11 21 31 41 51 61 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us ID (A) 10 1ms 10ms 1 100ms 1s DC o T c =25 C Single Pulse DUTY=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C SINGLE PULSE 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 15 V DS =5V T j =25 o C VG o T j =150 C ID , Drain Current (A) 12 QG 10V 9 QGS QGD 6 3 Charge Q 0 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4