Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 100V
▼ Simple Drive Requirement RDS(ON) 80mΩ
▼ Fast Switching Characteristic ID23A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃/W
Rthj-a 40 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data & specifications subject to change without notice 1
200906033
AP25N10GS/P-HF
Halogen-Free Product
0.77
Parameter
Parameter Rating
100
+20
Linear Derating Factor
Storage Temperature Range
23
14.6
80
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
-55 to 150
96
G
D
S
GDSTO-220(P)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GDSTO-263(S)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP25N10GP)
are available for low-profile applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 100 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.14 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=16A - - 80 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=16A - 14 - S
IDSS Drain-Source Leakage Current VDS=100V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=80V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=16A - 19 30 nC
Qgs Gate-Source Charge VDS=80V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC
td(on) Turn-on Delay Time2VDD=50V - 10 - ns
trRise Time ID=16A - 28 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 17 - ns
tfFall Time RD=3.125Ω-2-
ns
Ciss Input Capacitance VGS=0V - 1060 1700 pF
Coss Output Capacitance VDS=25V - 270 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF
RgGate Resistance f=1.0MHz - 1.5 2.3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=16A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=16A, VGS=0V - 90 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 380 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP25N10GS/P-HF
3.Surface mounted on 1 in2 copper pad of FR4 board
A
P25N10GS/P-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
50
036912
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
VG=5.0V
10V
9.0V
8.0V
7.0V
0
10
20
30
40
036912
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=5.0V
10V
9.0V
8.0V
7.0V
50
70
90
110
130
246810
VGS Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=12A
TC=25oC
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=16A
VG=10V
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.4
0.6
0.8
1.0
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
AP25N10GS/P-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
Q
VG
10V
QGS QGD
QG
Charge
1
10
100
1000
10000
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
1s
DC
0
5
10
15
20
25
0246810
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=25oC
VDS =5V
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =48V
VDS =64V
VDS =80V
ID=16A
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
DUTY=0.5
SINGLE PULSE
0.
2
Tj=150oC
