1SS337
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS337
Ultra High Speed Switching Application
Small package : SC-59
Low forward voltage : VF (3) = 0.88V (typ.)
Fast reverse recovery time : trr = 6ns (typ.)
Small total capa citance : CT = 1.6pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 600 * mA
Average forward current IO 200 * mA
Surge current (10ms) IFSM 6 * A
Power dissipation P 150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55~150 °C
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― I
F = 10mA ― 0.66 ―
VF (2) ― I
F = 100mA ― 0.80 ―
Forward voltage
VF (3) ― I
F = 200mA ― 0.88 1.20
V
IR (1) ― V
R = 30V ― ― 0.25
Reverse current
IR (2) ― V
R = 80V ― ― 0.50 µA
Total capacitance CT ― V
R = 0, f = 1MHz ― 1.6 ― pF
Reverse recovery time trr ― I
F = 30mA, Fig.1 ― 6 20
ns
JEDEC TD-236MOD
EIAJ SC-59
TOSHIBA 1-3G1F
Weight: 0.012g
Unit: mm
1SS337
2001-06-07
2
Fig.1 Reverse Recovery Time (trr) Test Circuit Marking
1SS337
2001-06-07
3
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000707EA
A
RESTRICTIONS ON PRODUCT USE
