ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92260m-AAS/A1
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The IS66_ series are optically coupled isolators
consisting of infrared light emitting diode and a
high voltage NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 6pin dual in line
plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh Current Transfer Ratio ( 1000% min)
lHigh BVCEO (400V min. - IS662)
(300V min. - IS661)
(200V min. - IS660)
lLow collector dark current :-
1µA max. at 200V VCE - IS661, IS662
1µA max. at 100V VCE - IS660
lLow input current 1mA IF
APPLICATIONS
lModems
lCopiers, facsimiles
lNumerical control machines
lSignal transmission between systems of
different potentials and impedances
IS660, IS661, IS662
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 200, 300, 400V
Collector-base Voltage BVCBO 200, 300, 400V
Emitter-baseVoltage BVECO 6V
Collector Current IC150mA
Power Dissipation 300mW
POWER DISSIPATION
Total Power Dissipation 350mW
10.16
0.26
OPTION G
7.62
OPTION SM
SURFACE MOUNT
0.26
0.5
Dimensions in mm
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
3 4
6
2 5
10.46
9.86
0.6
0.1 1.25
0.75
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92260m-AAS/A1
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.4 VIF = 10mA
Reverse Voltage (VR)6VIR = 10µA
Reverse Current (IR)10 µAVR = 6V
Output Collector-emitter Breakdown (BVCEO )
IS660 200 VIC = 1mA
IS661 300 VIC = 1mA
IS662 400 VIC = 1mA
Collector-base Breakdown (BVCBO )
IS660 200 VIC = 0.1mA
IS661 300 VIC = 0.1mA
IS662 400 VIC = 0.1mA
Emitter-base Breakdown (BVEBO )6VIE = 0.1mA
Collector-emitter Dark Current (ICEO )
IS661, IS662 1µAVCE = 200V
IS660 1µAVCE = 100V
Coupled Current Transfer Ratio (CTR) 1000 4000 %1mA IF , 2V VCE
Collector-emitter Saturation VoltageVCE(SAT) 1.2 V20mA IF , 100mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Input-output Capacitance Cf 1pF V = 0, f =1MHz
Cut-off frequency fc 1kHz VCE = 2V, IC= 20mA,
RL = 100Ω, RBE= open
Output Rise Time tr 300 µsVCE = 2V, IC= 20mA,
Output Fall Time tf 100 µsRL = 100Ω, RBE= open
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
7/12/00
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC
IC = 20mA
Input
FIGURE 1
100Ω
DB92260m-AAS/A1
7/12/00
0
0.5
1.0
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
0 0.4 0.8 1.2 1.6 2.0
40
60
Collector-emitter voltage VCE ( V )
20
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector Current vs. Collector-emitter
Voltage
1.5
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector dark current I CEO (A)
Collector Dark Current vs.
Ambient Temperature
VCE= 200V
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
200
0
Ambient temperature TA ( °C )
Collector power dissipation P C (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
100
Forward current I F (mA)
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
IF = 20mA
IC = 100mA
80
100
120
140
Collector current I C (mA)
IF = 0.5mA
1mA
2mA
4mA
10mA
IF = 1mA
VCE= 2V
10-11
10-10
10-9
10-8
10-7
10-6
10-5
300
400
