UHF TV LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .425 4LFL (M119)
hermetically sealed
.470-860 MHz
.26.5 VOLTS
.GOLD METALLIZATION
.POUT =20.0W MIN. WITH 9.5 dB GAIN
.INTERNAL INPUT MATCHING
.DIFFUSED EMITTER BALLAST
RESISTORS
DESCRIPTION
The SD4010 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors. The SD4010 is intended for use in linear
applications up to 1GHz, including UHF television
transmitters, transposers and cellular base sta-
tions.
PIN CONNECTION
BRANDING
SUTV200
ORDER CODE
SD4010
ABSOLUTE MAXIMUM RATINGS (Tcase =25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60.0 V
VCES Collector-Emitter Voltage 60.0 V
VEBO Emitter-Base Voltage 4.0 V
ICDevice Current (Maximum) 11.0 A
PDISS Power Dissipation 88.8 W
TJJunction Temperature +200 °C
TSTG Storage Temperature −65 to +150 °C
RTH(j-c) Junction-Case Thermal Resistance 1.9 °C/W
SD4010
1. Collector 3. Emitter
2. Base
THERMAL DATA
November 1992 1/5
ELECTRICAL SPECIFICATIONS (Tcase =25°C)
Symbol Test Conditions Value Unit
Min. Typ. Max.
POUT f=860MHz VCE =26.5V PIN =2.2W 20.0 28.0 — W
GPf=860MHz VCE =26.5V POUT =20W 9.5 10.5 — dB
IMD3PSYNC =20W VCE =26.5V (note 1) — −48 −46 dBc
IP3VCB =26.5V POUT =20W PEP (note 2) — 55 — dBm
COB f=860MHz VCB =26.5V (note 3) — 25 36 pF
Load*
Mismatch f=860MHz VCE =26.5V POUT =20W 3:1 10:1 — VSWR
ICQ =IC=2.7A (1.35A per Side)
*VSWRtested for a minimum of 3:1 SWR at all phase angles.
Note1: Three Tone IMD Testing (CCIR)
f1=860.0MHz/ −8dB ref. to PSYNC -Visual
f2=863.5MHz/ −16dBref. to PSYNC - ColorSubcarrier
f3=864.5MHz/ −7dB ref. to PSYNC -Aural
STATIC
Symbol Test Conditions Value Unit
Min. Typ. Max.
BVEBO IE=10mA IC=0mA 3.0 4.0 — V
BVCES IC=50mA VBE =0V 60.0 85.0 — V
BVCEO IC=50mA IB=0mA 28.0 30.0 — V
ICEO VCE =26.5V IE=0mA — — 5 mA
hFE VCE =5V IC=3A 25 50 80 —
TestedPer Side
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT POWER OUTPUT & POWER GAIN vs
TOTAL COLLECTOR CURRENT
Note 2: IP3Calculated Based on Two-Tone
IMD Testing:
f1=900.0 MHz/ −6dB ref. to POUT
f2=900.1 MHz/ −6dB ref. to POUT
IMD3(Typ) < −36dBc
Note 3: Tested Per Side
SD4010
2/5
TEST CIRCUIT SCHEMATIC
Balun 1, 2 : 50ΩCoaxial Cable, λ/4 @ 860 MHz
C1, C4,
C11, C16 : 100µF, 50V Electrolytic
C2, C5,
C12, C15 : 10µF, 35V Tantalum
C3, C6, C7 C8,
C19, C20 : 75 pF Ceramic Chip, ATC B
C9, C18 : 0.4 - 2.5 pF Variable, JOHANSON Giga-trim
C10 : 2pF Ceramic Chip, ATC B
C17 : 5pF Ceramic Chip, ATC B
L1, L2 : 7 Turns, 0.12” I.D., #22 AWG (1:1)
L3, L4 : 5 Turns, 0.12” I.D., #22 AWG (1:1)
See Photomaster for Microstrip Lines
Board
Material: ROGERS Ultra-Lam Er =2.55, Height =0.030”,
2 oz. Cu.
TYPICAL PERFORMANCE (cont’d)
INTERMODULATION DISTORTION vs POWER OUTPUT
SD4010
3/5
PHOTOMASTER OF TEST CIRCUIT
SD4010
4/5
PACKAGE MECHANICAL DATA
Ref. Dwg. No.: 12-0119
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability forthe
consequences of use of such information nor forany infringementof patents orother rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder any patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin life supportdevices orsystemswithoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands-
Singapore -Spain - Sweden- Switzerland -Taiwan - Thailand - UnitedKingdom - U.S.A
SD4010
5/5
