FZ1000R25KF1 - Infineon Technologies [EUPEC]

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage VCES 2500 V

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 1000 A

DC-collector current TC = 25 °C IC 1600 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 2000 A

Gesamt-Verlustleistung

total power dissipation TC=25°C, Transistor Ptot 10,4 kW

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Dauergleichstrom

DC forward current IF 1000 A

Periodischer Spitzenstrom

repetitive peak forw. current tP = 1 ms IFRM 2000 A

Grenzlastintegral der Diode

I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t 400 kA2s

Isolations-Prüfspannung

insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 5 kV

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Kollektor-Emitter Sättigungsspannung IC = 1000A, VGE = 15V, Tvj = 25°C VCE sat - 3,0 3,5 V

collector-emitter saturation voltage IC = 1000A, VGE = 15V, Tvj = 125°C - 3,8 4,3 V

Gate-Schwellenspannung

gate threshold voltage IC = 80mA, VCE = VGE, Tvj = 25°C VGE(th) 4,3 5,3 6,3 V

Gateladung

gate charge VGE = -15V ... +15V QG - 18 - µC

Eingangskapazität

input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 95 - nF

Rückwirkungskapazität

reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 8 - nF

Kollektor-Emitter Reststrom

collector-emitter cut-off current VCE = 2500V, VGE = 0V, Tvj = 25°C ICES - - 20 mA

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA

prepared by: Oliver Schilling date of publication: 01.09.2001

approved by: Thomas Schütze revision: 3

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Einschaltverzögerungszeit (ind. Last) IC = 1000A, VCE = 1200V

turn on delay time (inductive load) VGE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 25°C, td,on - 1,4 - µs

VGE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 125°C, - 1,5 - µs

Anstiegszeit (induktive Last) IC = 1000A, VCE = 1200V

rise time (inductive load) VGE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 25°C, tr - 0,25 - µs

VGE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 125°C, - 0,25 - µs

Abschaltverzögerungszeit (ind. Last) IC = 1000A, VCE = 1200V

turn off delay time (inductive load) VGE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 25°C, td,off - 2,2 - µs

VGE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 125°C, - 2,2 - µs

Fallzeit (induktive Last) IC = 1000A, VCE = 1200V

fall time (inductive load) VGE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 25°C, tf - 0,2 - µs

VGE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 125°C, - 0,2 - µs

Einschaltverlustenergie pro Puls IC = 1000A, VCE = 1200V, VGE = ±15V

turn-on energy loss per pulse RG = 1,3Ω, CGE=136nF, Tvj = 125°C , LS = 60nH Eon - 1400 - mWs

Abschaltverlustenergie pro Puls IC = 1000A, VCE = 1200V, VGE = ±15V

turn-off energy loss per pulse RG = 2,7Ω, CGE=136nF, Tvj = 125°C , LS = 60nH Eoff - 1000 - mWs

Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V

SC Data TVj≤125°C, VCC=1200V, VCEmax=VCES -LsCE ·dI/dt ISC - 4000 - A

Modulinduktivität

stray inductance module LsCE - 12 - nH

Modulleitungswiderstand, Anschlüsse - Chip

module lead resistance, terminals - chip RCC´+EE´ - 0,19 - mΩ

Diode / Diode min. typ. max.

Durchlaßspannung IF = 1000A, VGE = 0V, Tvj = 25°C VF - 2,3 2,7 V

forward voltage IF = 1000A, VGE = 0V, Tvj = 125°C - 2,3 2,7 V

Rückstromspitze IF = 1000A, - diF/dt = 4000A/µs

peak reverse recovery current VR = 1200V, VGE = -10V, Tvj = 25°C IRM - 950 - A

VR = 1200V, VGE = -10V, Tvj = 125°C - 1000 - A

Sperrverzögerungsladung IF = 1000A, - diF/dt = 4000A/µs

recovered charge VR = 1200V, VGE = -10V, Tvj = 25°C Qr - 520 - µAs

VR = 1200V, VGE = -10V, Tvj = 125°C - 900 - µAs

Abschaltenergie pro Puls IF = 1000A, - diF/dt = 4000A/µs

reverse recovery energy VR = 1200V, VGE = -10V, Tvj = 25°C Erec - 340 - mWs

VR = 1200V, VGE = -10V, Tvj = 125°C - 650 - mWs

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

Thermische Eigenschaften / Thermal properties min. typ. max.

Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,012 K/W

thermal resistance, junction to case Diode/Diode, DC - - 0,024 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink pro Modul / per Module

λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K RthCK - 0,008 - K/W

Höchstzulässige Sperrschichttemperatur

maximum junction temperature Tvj - - 150 °C

Betriebstemperatur Sperrschicht

junction operation temperature Schaltvorgänge IGBT(RBSOA);Diode(SOA)

switching operation IGBT(RBSOA);Diode(SOA) Tvj,op -40 - 125 °C

Lagertemperatur

storage temperature Tstg -40 - 125 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Material Modulbodenplatte

material of module baseplate AlSiC

Innere Isolation

internal insulation AlN

Kriechstrecke

creepage distance 32 mm

Luftstrecke

clearance 19,1 mm

CTI

comperative tracking index >400

Anzugsdrehmoment f. mech. Befestigung M1 5 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse terminals M4 M2 2 Nm

terminal connection torque terminals M8 8 - 10 Nm

Gewicht

weight G 1000 g

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

I

C[A]

VCE [V]

I

C[A]

VCE [V]

0

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2000

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0

Tj = 25°C

Tj = 125°C

Ausgangskennlinie (typisch) I C = f (VCE)

Output characteristic (typical) VGE = 15V

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VGE = 20V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 9V

VGE = 8V

Ausgangskennlinienfeld (typisch) I C = f (VCE)

Output characteristic (typical) Tvj = 125°C

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

I

C[A]

VGE [V]

I

F[A]

VF [V]

0

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5 6 7 8 9 10 11 12 13

Tj = 25°C

Tj = 125°C

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 10V

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0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5

Tj = 25°C

Tj = 125°C

Durchlaßkennlinie der Inversdiode (typisch) I F = f (VF)

Forward characteristic of inverse diode (typical)

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

E [mJ]

IC [A]

E [mJ]

RG [ΩΩΩ]

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4500

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0 250 500 750 1000 1250 1500 1750 2000

Eon

Eoff

Erec

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) Rgon=1,3ΩΩΩ, Rgoff=2,7ΩΩΩ, CGE=136nF , VGE=±15V, VCE = 1200V, Tj = 125°C, LS = 60nH

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0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Eon

Eoff

Erec

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) IC = 1000A , VCE = 1200V , VGE=±15V, CGE = 136nF, Tj = 125°C, LS = 60nH

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

I

C[A]

VCE [V]

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) Rg = 2,7 Ohm, CGE = 136nF, Tvj= 125°C

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IC,Modul

IC,Chip

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Sicherer Arbeitsbereich Diode (SOA)

safe operation area Diode (SOA) Tvj= 125°C

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

t [sec]

i 1 2 3 4

ri [K/kW] : IGBT 1,35 3,3 5,55 1,8

τi [sec] : IGBT 0,011 0,052 0,103 0,95

ri [K/kW] : Diode 3,15 7,5 6,75 6,6

τi [sec] : Diode 0,025 0,056 0,1 1,31

Z

thJC [K / W]

0,0001

0,001

0,01

0,1

0,001 0,01 0,1 1 10 100

Zth:Diode

Zth:IGBT

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ 1000 R 25 KF1

Äußere Abmessungen und Schaltbild /

extenal dimensions and circuit diagram

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