BFG520W/X,115 - NXP - Product.Network

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NXP Semiconductors

BFG520W; BFG520W/X

NPN 9 GHz wideband transistors

Rev. 04 — 21 November 2007 Product data sheet

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

FEATURES

•High power gain

•Low noise figure

•High transition frequency

•Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end wideband applications in the GHz range,

such as analog and digital cellular telephones, cordless

telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,

pagers, satellite television tuners (SATV) and repeater

amplifiers in fibre-optic systems.

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin

dual-emitter SOT343N plastic package.

MARKING

TYPE NUMBER CODE

BFG520W N3

BFG520W/X N4

PINNING

PIN DESCRIPTION

BFG520W BFG520W/X

1 collector collector

2 base emitter

3 emitter base

4 emitter emitter

Fig.1 Simplified outline SOT343N.

handbook, halfpage

Top view

MBK523

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCES collector-emitter voltage RBE =0 −−15 V

ICcollector current (DC) −−70 mA

Ptot total power dissipation Ts≤85 °C−−500 mW

hFE DC current gain IC= 20 mA; VCE = 6 V 60 120 250

Cre feedback capacitance IC= 0; VCB = 6 V; f = 1 MHz −0.35 −pF

fTtransition frequency IC= 20 mA; VCE = 6 V; f = 1 GHz; Tamb =25°C−9−GHz

GUM maximum unilateral

power gain IC= 20 mA; VCE = 6 V; f = 900 MHz; Tamb =25°C−17 −dB

|S21|2insertion power gain IC= 20 mA; VCE = 6 V; f = 900 MHz; Tamb =25°C16 17 −dB

F noise ﬁgure Γs=Γ

opt; IC= 5 mA; VCE = 6 V; f = 900 MHz −1.1 1.6 dB

Rev. 04 - 21 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCES collector-emitter voltage RBE =0 −15 V

VEBO emitter-base voltage open collector −2.5 V

ICcollector current (DC) −70 mA

Ptot total power dissipation Ts≤85 °C; see Fig.2; note 1 −500 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −175 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts≤85 °C; note 1 180 K/W

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

400

MBG248

150 T ( C)

Ptot

(mW)

600

200

Rev. 04 - 21 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero.

2. IC= 20 mA; VCE =6V; R

L=50Ω; Tamb =25°C;

fp= 900 MHz; fq= 902 MHz; measured at 2fp−fq= 898 MHz and 2fq−fp= 904 MHz.

3. dim =−60 dB (DIN45004B); IC= 20 mA; VCE =6V; V

p=V

; Vq=V

o−6 dB; Vr=V

o−6 dB; RL=75Ω;

p= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at fp+f

q−f

r= 793.25 MHz.

4. IC= 20 mA; VCE =6V; V

o=75mV; R

L=75Ω; Tamb =25°C;

fp= 250 MHz; fq= 560 MHz; measured at fp+f

q= 810 MHz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage IC=10 µA; IE=0 20 −−V

(BR)CES collector-emitter breakdown voltage IC=10µA; RBE =0 15 −−V

(BR)EBO emitter-base breakdown voltage IE=10µA; IC= 0 2.5 −−V

CBO collector leakage current VCB =6V; I

E=0 −−50 nA

hFE DC current gain IC= 20 mA; VCE = 6 V; see Fig.3 60 120 250

Cre feedback capacitance IC= 0; VCB = 6 V; f = 1 MHz;

see Fig.4 −0.35 −pF

fTtransition frequency IC= 20 mA; VCE = 6 V; f = 1 GHz;

Tamb =25°C; see Fig.5 −9−GHz

GUM maximum unilateral power gain;

note 1 IC= 20 mA; VCE = 6 V; f = 900 MHz;

Tamb =25°C−17 −dB

IC= 20 mA; VCE = 6 V; f = 2 GHz;

Tamb =25°C−11 −dB

|S21|2insertion power gain IC= 20 mA; VCE = 6 V; f = 900 MHz;

Tamb =25°C16 17 −dB

F noise ﬁgure Γs=Γ

opt; IC= 5 mA; VCE =6V;

f = 900 MHz −1.1 1.6 dB

Γs=Γ

opt; IC= 20 mA; VCE =6V;

f = 900 MHz −1.6 2.1 dB

Γs=Γ

opt; IC= 5 mA; VCE =6V;

f = 2 GHz −1.85 −dB

PL1 output power at 1 dB gain

compression IC= 20 mA; VCE = 6 V; f = 900 MHz;

RL=50Ω; Tamb =25°C−17 −dBm

ITO third order intercept point note 2 −26 −dBm

Vooutput voltage note 3 −275 −mV

d2second order intermodulation

distortion note 4 −−50 −dB

GUM 10 S21 2

11 2

–()1S

22 2

–()

-------------------------------------------------------------- dB.log=

Rev. 04 - 21 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

VCE =6V.

Fig.3 DC current gain as a function of collector

current; typical values.

handbook, halfpage

150

100

10 1

MLB807

11010

I (mA)

IC= 0; f = 1 MHz.

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

MLB808

0.6

0.4

0.2

02.5 5 7.5 10

V (V)

Cre

(pF)

Fig.5 Transition frequency as a function of

collector current; typical values.

f = 1 GHz; Tamb =25°C.

handbook, halfpage

MLB809

(GHz)

102

101

I (mA)

V =

3 V

6 V

Rev. 04 - 21 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

f = 900 MHz; VCE =6V.

Fig.6 Gain as a function of collector current;

typical values.

handbook, halfpage

010 20 40

MLB810

gain

(dB)

I (mA)

MSG

Gmax

f = 2 GHz; VCE =6V.

Fig.7 Gain as a function of collector current;

typical values.

handbook, halfpage

010 20 40

MLB811

gain

(dB)

I (mA)

MSG

Gmax

IC= 5 mA; VCE =6V.

Fig.8 Gain as a function of frequency;

typical values.

handbook, halfpage

010

MLB812

102103104

(dB)

f (MHz)

gain

Gmax

GUM

MSG

Fig.9 Gain as a function of frequency;

typical values.

IC= 20 mA; VCE =6V.

handbook, halfpage

010

MLB813

102103104

(dB)

f (MHz)

gain

Gmax

GUM

MSG

Rev. 04 - 21 November 2007

6 of 15

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

Fig.10 Intermodulation distortion as a function

of collector current; typical values.

Vo= 275 mV; fp+f

q−f

r= 793.25 MHz; VCE =6V;

L=75Ω; Tamb =25°C.

handbook, halfpage

MLB818

(dB)

01020 40

dim

I (mA)

Fig.11 Second order intermodulation distortion as a

function of collector current; typical values.

Vo= 75 mV; fp+f

q= 810 MHz; VCE =6V;

L=75Ω Tamb =25°C.

handbook, halfpage

MLB819

(dB)

01020 40

I (mA)

Fig.12 Minimum noise figure as a function

of collector current; typical values.

VCE =6V.

handbook, halfpage

MLB820

010101

(dB)

I (mA)

1000 MHz

f = 2000 MHz

500 MHz

900 MHz

Fig.13 Associated available gain as a function

of collector current; typical values.

VCE =6V.

handbook, halfpage

MLB821

010101

(dB)

I (mA)

ass f = 900 MHz

1000 MHz

2000 MHz

Rev. 04 - 21 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

Fig.14 Minimum noise figure as a function of

frequency; typical values.

VCE =6V.

handbook, halfpage

MLB822

(dB)

10 f (MHz)

20 mA

I =

5 mA

Fig.15 Associated available gain as a function

of frequency; typical values.

VCE =6V.

handbook, halfpage

MLB823

(dB)

f (MHz)

ass 20 mAI = 5 mA

Rev. 04 - 21 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

Fig.16 Common emitter noise figure circles; typical values.

handbook, full pagewidth

MLB824

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.2

0.5

0.2

unstable

region

F = 1.5 dB

F = 2 dB

F = 3 dB

min

opt

F = 1.1 dB

0.2

0.5

0.5 1 2 5

stability

circle

f = 900 MHz; VCE = 6 V; IC= 5 mA; Zo=50Ω.

Fig.17 Common emitter noise figure circles; typical values.

handbook, full pagewidth

MLB825

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5 1

(1)

(2)

(5)

(6)

(7) (8)

(3) (4)

f = 2 GHz; VCE = 6 V; IC= 5 mA; Zo=50Ω.

(1) Γopt; Fmin = 1.85 dB.

(2) F = 2 dB.

(3) F = 2.5 dB.

(4) F = 3 dB.

(5) Γms;G

max = 11.8 dB.

(6) G = 11 dB.

(7) G = 10 dB.

(8) G = 9 dB.

Rev. 04 - 21 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

Fig.18 Common emitter input reflection coefficient (S11); typical values.

handbook, full pagewidth

MLB814

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

3 GHz

0.2

0.2 0.5

40 MHz

VCE = 6 V; IC= 20 mA; Zo=50Ω.

Fig.19 Common emitter forward transmission coefficient (S21); typical values.

handbook, full pagewidth

MLB815

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

40 MHz

3 GHz

VCE = 6 V; IC= 20 mA.

Rev. 04 - 21 November 2007

10 of 15

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

VCE = 6 V; IC= 20 mA.

Fig.20 Common emitter reverse transmission coefficient (S12); typical values.

handbook, full pagewidth

MLB816

90o

135o

180o

90o

0.25 0.20 0.15 0.10 0.05

45o

135o45o

40 MHz

3 GHz

Fig.21 Common emitter output reflection coefficient (S22); typical values.

handbook, full pagewidth

MLB817

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

3 GHz

0.2

0.2 0.5

40 MHz

VCE = 6 V; IC= 20 mA; Zo=50Ω.

Rev. 04 - 21 November 2007

11 of 15

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

SPICE parameters for the BFG520W die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.016 fA

2 BF 220.1 −

3 NF 1.000 −

4 VAF 48.06 V

5 IKF 510 mA

6 ISE 283 fA

7 NE 2.035 −

8 BR 100.7 −

9 NR 0.988 −

10 VAR 1.692 V

11 IKR 2.352 mA

12 ISC 24.48 aA

13 NC 1.022 −

14 RB 10.00 Ω

15 IRB 1.000 µA

16 RBM 10.00 Ω

17 RE 775.3 mΩ

18 RC 2.210 Ω

19 (1) XTB 0.000 −

20 (1) EG 1.110 eV

21 (1) XTI 3.000 −

22 CJE 1.245 pF

23 VJE 600.0 mV

24 MJE 0.258 −

25 TF 8.616 ps

26 XTF 6.788 −

27 VTF 1.414 V

28 ITF 110.3 mA

29 PTF 45.01 deg

30 CJC 447.6 fF

31 VJC 189.2 mV

32 MJC 0.070 −

33 XCJC 0.130 −

34 TR 543.7 ps

35 (1) CJS 0.000 F

Note

1. These parameters have not been extracted, the

default values are shown.

List of components (see Fig.22)

36 (1) VJS 750.0 mV

37 (1) MJS 0.000 −

38 FC 0.780 −

DESIGNATION VALUE UNIT

Cbe 70 fF

Ccb 50 fF

Cce 115 fF

L1 0.34 nH

L2 0.10 nH

L3 0.25 nH

LB0.40 nH

LE0.40 nH

SEQUENCE No. PARAMETER VALUE UNIT

QLB= 50; QLE= 50; QLB,E(f)=QL

B,E√(f/fc)

fc= scaling frequency = 1 GHz.

Fig.22 Package equivalent circuit SOT343N.

handbook, halfpage

MBC964

CB' C'

L1 L2

Ccb

Cbe ce

Rev. 04 - 21 November 2007

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NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

PACKAGE OUTLINE

UNIT A1

max bpcD E

pQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

SOT343N

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 4 leads SOT343N

wMB

97-05-21

Rev. 04 - 21 November 2007

13 of 15

NXP Semiconductors BFG520W; BFG520W/X

NPN 9 GHz wideband transistors

Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

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sheet, which is available on request via the local NXP Semiconductors sales

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Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

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malfunction of an NXP Semiconductors product can reasonably be expected

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damage. NXP Semiconductors accepts no liability for inclusion and/or use of

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therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

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at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

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Notice: All referenced brands, product names, service names and trademarks

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Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Rev. 04 - 21 November 2007

14 of 15

NXP Semiconductors BFG520W; BFG520W/X

NPN 9 GHz wideband transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 21 November 2007

Document identifier: BFG520W_X_N_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG520W_N_4 20071121 Product data sheet - BFG520W_X_3

Modiﬁcations: •Page 2; text in Pinning table changed

BFG520W_X_3 19981002 Product speciﬁcation - BFG520W_2

BFG520W_2 19950824 Product speciﬁcation - BFG520W_1

BFG520W_1 19940829 - - -