Vishay General Semiconductor
BYG21K & BYG21M
Document Number 88961
05-Jul-06
www.vishay.com
1
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and free-wheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV) 1.5 A
VRRM 800 V, 1000 V
IFSM 30 A
IR1.0 µA
VF1.6 V
trr 120 ns
ER20 mJ
Tj max. 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG21K BYG21M UNIT
Device marking code BYG21K BYG21M
Maximum repetitive peak reverse voltage VRRM 800 1000 V
Average forward current IF(AV) 1.5 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 1 A, Tj = 25 °C ER20 mJ
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
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Document Number 88961
05-Jul-06
Vishay General Semiconductor
BYG21K & BYG21M
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG21K BYG21M UNIT
Maximum instantaneous
forward voltage (1)
at IF = 1 A
IF = 1.5 A Tj = 25 °C VF
1.5
1.6 V
Maximum reverse current at VR = VRRM
Tj = 25 °C
Tj = 100 °C IR
1
10 µA
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 120 ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG21K BYG21M UNIT
Typical thermal resistance - Junction lead TL = const. RthJL 25 °C/W
Typical thermal resistance - Junction Ambient RθJA
150 (1)
125 (2)
100 (3)
°C/W
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE Q’TY DELIVERY MODE
BYG21K-E3/TR 0.064 TR 1800 7" Diameter Plastic Tape & Reel
BYG21K-E3/TR3 0.064 TR3 7500 13" Diameter Plastic Tape & Reel
Figure 1. Forward Current vs. Forward Voltage
0.001
0.010
0.100
1.000
10.000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
Figure 2. Max. Average Forward Current vs. Ambient Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
R
= V
RRM
half sine-wave
Ambient Temperature (°C)
Average Forward Current (A)
R
thJA
= 25 K/W
R
thJA
= 125 K/W
R
thJA
=
150 K/W
1007550250 125 150
Document Number 88961
05-Jul-06
www.vishay.com
3
BYG21K & BYG21M
Vishay General Semiconductor
Figure 3. Reverse Current vs. Junction Temperature
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
VR = VRRM
Reverse Power Dissipation (mW)
Junction Temperature (°C)
0
20
40
60
80
120
100
25 50 75 100 125 150
VR = VRRM
PR - Limit
at 100 % VR
PR - Limit
at 80 % VR
0
5
10
15
20
25
0.1 1.0 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
Figure 6. Max. Reverse Recovery Charge vs. Forward Current
Figure 7. Thermal Response
0
50
100
150
200
0 0.2 0.4 0.6 0.81.0
Reverse Recovery Charge (nC)
Forward Current (A)
T
amb
= 125 °C
T
amb
= 100 °C
T
amb
= 25 °C
T
amb
= 75 °C
T
amb
= 50 °C
I
R
= 0.5 A, i
R
= 0.125 A
1
10
100
1000
Thermal Resistance for Pulse Cond. (K/W)
Pulse Length (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
125 K/W DC
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
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Document Number 88961
05-Jul-06
Vishay General Semiconductor
BYG21K & BYG21M
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52) 0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
