POWERSEM GmbH, Walpersdorfer Str.53
91126 D- Schwabach, Germany www.powersem.net
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM reserves the right to change limits, test conditions and dimensions
Single Phase PSB 95 IdAVM = 95 A
Rectifier Bridges VRRM = 800-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
800 800 PSB 95/08
1200 1200 PSB 95/12
1400 1400 PSB 95/14
1600 1600 PSB 95/16
1800 1800 PSB 95/18
Symbol Test Conditions Maximum Ratings
IdAVM TC = 85°C, module 95 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 1200 A
VR = 0 t = 8.3 ms (60 Hz), sine 1350 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1040 A
VR = 0 t = 8.3 ms (60 Hz), sine 1120 A
∫ i2 dt TVJ = 45°C t = 10 ms (50 Hz), sine 7200 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 9110 A2 s
TVJ = TVJM t = 10 ms (50 Hz), sine 5400 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 6270 A2 s
TVJ -40 ... + 150 °C
TVJM 150 °C
Tstg -40 ... + 150 °C
VISOL 50/60 HZ, RMS t = 1 min 2500 V ∼
IISOL ≤ 1 mA t = 1 s 3000 V ∼
Md Mounting torque (M5) 5 ± 15% Nm
Terminal connection torque (M5) 5 ± 15% Nm
Weight typ. 250 g
Symbol Test Conditions Characteristic Value
IR VR = VRRM T
VJ = 25°C ≤ 0.3 mA
VR = VRRM T
VJ = TVJM ≤ 6.0 mA
VF IF = 150 A TVJ = 25°C ≤ 1.5 V
VTO For power-loss calculations only 0.8 V
rT TVJ = TVJM 5.0 mΩ
RthJC per Diode; DC current 0.9 K/W
per module 0.225 K/W
RthJK per Diode; DC current 1.1 K/W
per module 0.275 K/W
dS Creeping distance on surface 8.0 mm
dA Creeping distance in air 4.5 mm
a Max. allowable acceleration 50 m/s2
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered, E 148688
Applications
• S
upplies for DC power equipment
• Input rectifiers for PWM inverter
• B
attery DC power supplies
• F
ield supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
PSB 95
1 1.5
0
40
80
120
160
200
I
F
V
F
A
V
T=150°C
T=25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
1200 1040
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
3
4
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value. t:
duration
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
10050
0
50
100
150
200
250
300 80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.77
0.77
0.44
0.28
0.19 0.11 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSB 95
Fig. 4 Power dissipation versus direct output current and ambient
tem
p
erature
50 100 150 200
0
20
40
60
80
100
120
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case tem
p
erature
0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
K/W
Zth
t[s]
ZthJK
ZthJC
Fig. 6 Transient thermal impedance per diode (or Thyristor),
calculated
