Single Phase Rectifier Bridges PSB 95 IdAVM = 95 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 95/08 PSB 95/12 PSB 95/14 PSB 95/16 PSB 95/18 Symbol Test Conditions IdAVM IFSM T C = 85C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 95 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1200 1350 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1040 1120 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 9110 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5400 6270 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 5 15% 5 15% 250 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered, E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM Characteristic Value VF VTO rT RthJC IF = 150 A T VJ = 25C 0.3 6.0 mA mA 1.5 V 0.8 5.0 V m per Diode; DC current per module 0.9 0.225 K/W K/W RthJK per Diode; DC current per module 1.1 0.275 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 8.0 4.5 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str.53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSB 95 10 IF(OV) -----IFSM 200 IFSM (A) TVJ=45C TVJ=150C A 160 1200 1.6 T=150C 4 2 As 1040 TVJ=45C 1.4 120 TVJ=150C 1.2 80 1 0 VRRM 0.8 40 T=25C IF 0 1/2 VRRM 1 VRRM 0.6 VF 10 1.5 V 1 1 0.4 0 1 10 Fig. 1 Forward current versus voltage drop per diode 10 2 10 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 80 TC 85 0.19 0.11 250 = RTHCA [K/W] 90 0.28 95 100 200 105 0.44 110 115 150 125 100 DC sin.180 rec.120 rec.60 rec.30 50 60 40 20 IdAV 145 0 C 100 [A] 0 Tamb 50 100 [K] 150 K/W 1.2 Z thJK 1 Z thJC 0.8 0.6 0.4 0.2 Z th 0.1 80 140 135 1.77 Fig. 4 Power dissipation versus direct output current and ambient temperature 0.01 DC sin.180 rec.120 rec.60 rec.30 130 150 50 120 [A] 100 120 0.77 IFAVM 2 3 t[ms] 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 300 [W] PSB 95 PVTOT 0 3 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated 50 100 150 TC(C) 200 Fig.5 Maximum forward current at case temperature