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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3515S02
X to Ku-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10708EJ01V0DS (1st edition)
Date Published February 2008 NS
Printed in Japan
2007, 2008
FEATURES
• Super low noise figure, high associated gain and middle output power
NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
P
O (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer
• DBS LNB, VSAT
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number Order Number Package Quantity Marking Supplying Form
NE3515S02-T1C NE3515S02-T1C-A 2 kpcs/reel G
NE3515S02-T1D NE3515S02-T1D-A
S02 (Pb-Free)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3515S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 4 V
Gate to Source Voltage VGS −3 V
Drain Current ID IDSS mA
Gate Current IG 100
μ
A
Total Power Dissipation Ptot Note 165 mW
Channel Temperature Tch +125 °C
Storage Temperature Tstg −65 to +125 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Data Sheet PG10708EJ01V0DS
2
NE3515S02
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter Symbol MIN. TYP. MAX. Unit
Drain to Source Voltage VDS 1 2 3 V
Drain Current ID 5 10 25 mA
Input Power Pin − − 0 dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10
μ
A
Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 32 60 88 mA
Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100
μ
A −0.2 −0.8 −1.4 V
Transconductance gm VDS = 2 V, ID = 10 mA 45 70 − mS
Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz − 0.3 0.5 dB
Associated Gain Ga 11 12.5 − dB
Gain 1 dB Compression PO (1 dB) VDS = 3 V, ID = 25 mA set (Non-RF), − +14 − dBm
Output Power f = 12 GHz
Data Sheet PG10708EJ01V0DS 3
NE3515S02
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Drain Current ID (mA)
Drain to Source Voltage VDS (V)
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
Drain Current ID (mA)
Minimum Noise Figure NFmin (dB)
Associated Gain Ga (dB)
Minimum Noise Figure NFmin (dB)
Associated Gain Ga (dB)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
Drain Current ID (mA)
Total Power Dissipation Ptot (mW)
Ambient Temperature TA (˚C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
250
200
150
100
50
0
050 100 150 200 250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
Drain Current ID (mA)
Gate to Source Voltage VGS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Frequency f (GHz)
Minimum Noise Figure NFmin (dB)
Associated Gain Ga (dB)
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
VDS = 2 V
100
90
80
70
60
50
40
30
20
10
0
–1.0 –0.8 –0.6 –0.4 –0.2 0
100
20
40
60
80
0
012345
VGS = 0 V
–0.4 V
–0.6 V
–0.2 V
–0.8 V
VDS = 2 V
ID = 10 mA
426 18810121416
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
20
15
10
5
0
Ga
NF
f = 12 GHz
VDS = 2 V
NFmin
10 150 5 20 25
1.2
1.4
1.6
0.6
0.8
1.0
0.2
0.4
0.0
12
14
16
6
8
10
2
4
0
Ga
f = 12 GHz
VDS = 3 V
10 150 5 20 3025
1.2
1.4
1.6
0.6
0.8
1.0
0.2
0.4
0.0
12
14
16
6
8
10
2
4
0
Ga
NFmin
Remark The graphs indicate nominal characteristics.
Data Sheet PG10708EJ01V0DS
4
NE3515S02
Reverse Transmission Gain |S
12e
|
2
(dB)
OUTPUT POWER, LINEAR GAIN
,
DRAIN CURRENT
GATE CURRENT vs. INPUT POWER
I
D
= 10 mA
V
DS
= 2 V
0
–5
–10
–15
–20
–25
–30
–35
Output Power P
out
(dBm)
Linear Gain G
L
(dB)
Input Power P
in (1 tone)
(dBm)
Drain Current I
D
(mA)
Gate Current I
G
(mA)
–15 5 100–10 –5
20
18
16
14
12
10
8
6
4
2
0
100
90
80
70
60
50
40
30
20
10
0
f = 12 GHz, V
DS
= 3 V
I
D
= 25 mA set (Non-RF)
P
O (1 dB)
optimized
P
out
G
L
I
D
I
G
|S
12e
|
2
|S
21e
|
2
Frequency f (GHz)
|S
21e
|
2
, MAG, MSG, |S
12e
|
2
vs.
FREQUENCY
Forward Transmission Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
5
10
15
20
0
05101520 3025
MAG, MSG
Reverse Transmission Gain |S
12e
|
2
(dB)
I
D
= 25 mA
V
DS
= 3 V
0
–5
–10
–15
–20
–25
–30
–35
|S
12e
|
2
Frequency f (GHz)
|S
21e
|
2
, MAG, MSG, |S
12e
|
2
vs.
FREQUENCY
Forward Transmission Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
5
10
15
20
0
05101520 3025
MAG, MSG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
Data Sheet PG10708EJ01V0DS 5
NE3515S02
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
Data Sheet PG10708EJ01V0DS
6
NE3515S02
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
13.0
2.80
L2–uX Ver. 1
1.7 mm/R.P.
2.60
2.06
2.6
1.7 1.7
Reference Plane
(Calibration Plane)
Reference Plane
(Calibration Plane)
6.0
0.64
0.74
2.06
0.54
0.3 TH
φ
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
Data Sheet PG10708EJ01V0DS 7
NE3515S02
PACKAGE DIMENSIONS
S02 (UNIT: mm)
(Top View)
(Side View)
(Bottom View)
0.5 TYP.
2.6±0.1
0.65 TYP.
3.2±0.2
1
2
3
4
2.2±0.2
3.2±0.2
1.7
1.5 MAX.
0.15±0.05
3
4
1
2
2.2±0.2
2.2±0.2
PIN CONNECTIONS
1. Source
2. Drain
3. Source
4. Gate
G
Data Sheet PG10708EJ01V0DS
8
NE3515S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10708EJ01V0DS 9
NE3515S02
The information in this document is current as of February, 2008. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
NE3515S02
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
