1
MRF154MOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed primarily for linear large–signal output stages in the 2.0–100 MHz
frequency range.
•Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 125 Vdc
Drain–Gate Voltage VDGO 125 Vdc
Gate–Source Voltage VGS ±40 Vdc
Drain Current — Continuous ID60 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1350
7.7 Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.13 °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF154/D
SEMICONDUCTOR TECHNICAL DATA
600 W, 50 V, 80 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 368–03, STYLE 2
(HOG PAC)
Motorola, Inc. 1997
D
G
S
REV 2
MRF154
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 125 — — Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 20 mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 5.0 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (V DS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc
Drain–Source On–V oltage (VGS = 10 V, ID = 40 A) VDS(on) 1.0 3.0 5.0 Vdc
Forward T ransconductance (VDS = 10 V, ID = 20 A) gfs 16 20 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss —1600 — pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss —950 — pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss —175 — pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 600 W , IDQ = 800 mA, f = 30 MHz) Gps —17 — dB
Drain Efficiency
(VDD = 50 V, Pout = 600 W , IDQ = 800 mA, f = 30 MHz) η— 45 — %
Intermodulation Distortion
(VDD = 50 V, Pout = 600 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA)
IMD(d3) —–25 — dB
Figure 1. 30 MHz Test Circuit
C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47 µF, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1 µF
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — T wo Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039 µF
C21 — 10 µF/100 V Electrolytic
L1 — 2 T urns #16 AWG, 1/2″ ID, 3/8″ Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801
All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.
R1, R2 — 10 Ohms/2.0 W Carbon
T1 — RF T ransformer, 1:25 Impedance Ratio. See Motorola
T1 — Application Note AN749, Figure 4 for details.
T1 — Ferrite Material: 2 Each, Fair–Rite Products
T1 — Corp. #2667540001
R1 C5 C6
R2 DUT
C4
C1 C2C3
L1
C7
RF
INPUT
RF
OUTPUT
+
–
0–6 V +
–
50 V
C14 C15 C16 C17 C18 C19
L2 L3 C20 C21
C9
C10 C11 C12
C13
C8
T1
3
MRF154MOTOROLA RF DEVICE DATA
P , OUTPUT POWER (WATTS)
out
Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power
Figure 4. DC Safe Operating Area Figure 5. Capacitance versus Drain Voltage
Figure 6. Gate Voltage versus Drain Current Figure 7. Common Source Unity Gain Frequency
versus Drain Current
POWER GAIN (dB)
25
20
15
10
5
02002 5 10 20 50 100
f, FREQUENCY (MHz)
VDD = 50 V
IDQ = 800 mA
Pout = 600 W
800
050
P
in, INPUT POWER (W ATTS)
100 MHz 30 MHz
100
01020
600
400
200
0
800
600
400
200
0
VDD = 50 V
40 V
VDD = 50 V
40 V
(IDQ = 800 mA)
ID, DRAIN CURRENT (AMPS)
100
200220
V
DS, DRAIN–SOURCE VOLTAGE (VOL TS)
10
1
TC = 25
°
C
C, CAPACITANCE (pF)
10,000
12
V
DS, DRAIN VOLTAGE (VOLTS)
5000
2000
1000
500
200
100 5 10 20 50 100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
IDS, DRAIN CURRENT (AMPS)
40
10
004
V
GS, GATE–SOURCE VOLTAGE (VOLTS)
268
30
20
TYPICAL DEVICE SHOWN
VDS = 10 V
VGS(th) = 3.5 V
gfs = 24 mhos
f , UNITY GAIN FREQUENCY (MHz)
t
600
20
ID, DRAIN CURRENT (AMPS)
04060
500
400
300
200
100
0
VDS = 30 V
15 V
MRF154
4MOTOROLA RF DEVICE DATA
Figure 8. Series Equivalent Impedance
Figure 9. 20–80 MHz 1.0 kW Broadband Amplifier
C1 — 1000 pF Ceramic
C2, C3, C4, C8, C9, C10, C11 — 0.1 µF Ceramic
C5 — 10 µF/100 V Electrolytic
C6, C7 — 0.1 µF Ceramic, (ATC 200/823 or Equivalent)
D1 — 28 V Zener, 1N5362 or Equivalent
D3 — 1N4148
IC1 — MC1723
L1, L2 — Fair–Rite Products Corp. Ferrite Beads
#2673000801
R1, R2, R3 — 10 k T rimpot
R4 — 1.0 k/1.0 W
R5 — 10 Ohms
R6 — 2.0 k
R7 — 10 k
R8 — Thermistor, 10 k (25°C), 2.5 k (75°C)
R9, R10 — 100 Ohms
R11, R12 — 1.0 k
R13, R14 — 50–100 Ohms, 4.0 x 2.0 W Carbon in Parallel
T1 — 9:1 T ransformer, Trifilar and Balun Wound on Separate
T1 — Fair–Rite Products Corp. Balun Cores #286100012, 5 T urns Each.
T2 — 1:9 T ransformer, Balun 50 Ohm CO–AX Cable RG–188,
T2 — Low Impedance Lines W.L. Gore 16 Ohms CO–AX Type CXN 1837.
T2 — Each Winding Threaded Through Two Fair–Rite Products Corp.
T2 — #2661540001 Ferrite Sleeves (6 Each).
XTR — MRF154
BIAS
+
–
30–40 V
R4
D1 C1 R3
R7
R5 R6
R8
TEMP. TRACKING
R2 D3
C3
R10
R14 C11
C9
T1
INPUT
C2
R9
D2
R1
R11
R12
C8
R13 C10
XTR
XTR
L1 L2
–
+
40 V
C4 C5
OUTPUT
IC1
C6
C7
T2
+
D.U.T.
D.U.T.
f = 100 MHz
2.0
4.0
7.5
15
3060
VDD = 50 V
IDQ = 800 mA
Pout = 600 W
Zo = 10
Ω
Zin
5
MRF154MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure deter-
mines the capacitors from gate–to–drain (Cgd), and gate–to–
source (Cgs). The PN junction formed during the fabrication
of the RF MOSFET results in a junction capacitance from
drain–to–source (Cds).
These capacitances are characterized as input (Ciss), out-
put (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capaci-
tances and those given on data sheets are shown below . The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
Cgd
GATE
SOURCE
Cgs
DRAIN
Cds Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data pres-
ented, Figure 5 may give the designer additional information
on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain cur-
rent level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some ex-
tent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified un-
der specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The input resistance is very high — on the order of 109 ohms
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open–cir-
cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended.
MOUNTING OF HIGH POWER RF
POWER TRANSISTORS
The package of this device is designed for conduction
cooling. It is extremely important to minimize the thermal re-
sistance between the device flange and the heat dissipator.
Since the device mounting flange is made of soft copper, it
may be deformed during various stages of handling or during
transportation. It is recommended that the user makes a final
inspection on this before the device installation. ±0.0005″ is
considered sufficient for the flange bottom.
The same applies to the heat dissipator in the device
mounting area. If copper heatsink is not used, a copper head
spreader is strongly recommended between the device
mounting surfaces and the main heatsink. It should be at
least 1/4″ thick and extend at least one inch from the flange
edges. A thin layer of thermal compound in all interfaces is,
of course, essential. The recommended torque on the 4–40
mounting screws should be in the area of 4–5 lbs.–inch, and
spring type lock washers along with flat washers are recom-
mended.
For die temperature calculations, the ∆ temperature from a
corner mounting screw area to the bottom center of the
flange is approximately 5°C and 10°C under normal operat-
ing conditions (dissipation 150 W and 300 W respectively).
The main heat dissipator must be sufficiently large and
have low Rθ for moderate air velocity, unless liquid cooling is
employed.
MRF154
6MOTOROLA RF DEVICE DATA
CIRCUIT CONSIDERATIONS
At high power levels (500 W and up), the circuit layout be-
comes critical due to the low impedance levels and high RF
currents associated with the output matching. Some of the
components, such as capacitors and inductors must also
withstand these currents. The component losses are directly
proportional to the operating frequency. The manufacturers
specifications on capacitor ratings should be consulted on
these aspects prior to design.
Push–pull circuits are less critical in general, since the
ground referenced RF loops are practically eliminated, and
the impedance levels are higher for a given power output.
High power broadband transformers are also easier to de-
sign than comparable LC matching networks.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector Drain. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Source. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Gate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES V(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO VDGO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES IDSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO IGSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on) VGS(th)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat) VDS(on)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib Ciss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob Coss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe gfs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) = VCE(sat)
ICrDS(on) = VDS(on)
ID
7
MRF154MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 368–03
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. DRAIN
2. GATE
3. SOURCE
U
V
K
N
D
Q4 PL
1
3
2
–A–
–B–
M
A
M
0.25 (0.010) B M
T
N
CEJ
H
SEATING
PLANE
–T–
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.490 1.510 37.85 38.35
B0.990 1.010 25.15 25.65
C0.330 0.365 8.38 9.27
D0.490 0.510 12.45 12.95
E0.195 0.205 4.95 5.21
H0.045 0.055 1.14 1.39
J0.004 0.006 0.10 0.15
K0.425 0.500 10.80 12.70
N0.890 0.910 22.87 23.11
Q0.120 0.130 3.05 3.30
U1.250 BSC 31.75 BSC
V0.750 BSC 19.05 BSC
MRF154
8MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Af firmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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MRF154/D
◊
