CPH3314
Rev.0 I Page 1 of 4 I www.onsemi.com
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V dri ve.
Ordering number : ENN6909
Package Dimensions
unit : mm
2152A
[CPH3314]
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
0.05
0.9
0.7 0.2 1.6 0.60.6
1.9
12
3
2.8
0.2
2.9 0.15
0.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID--1.6 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --6.4 A
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 1 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--0.8A 1.0 1.5 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=--0.8A, VGS=--10V 210 270 mΩ
RDS(on)2 ID=--0.4A, VGS=--4V 360 500 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 185 pF
Output Capacitance Coss VDS=--10V, f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 20 pF
Marking : JP Continued on next page.
CPH3314 P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
CPH3314/D
CPH3314
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise T ime trSee specified Test Circuit 4 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 22 ns
Fall T ime tfSee specified Test Circuit 8 ns
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.6A 4.7 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.6A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.6A 0.7 nC
Diode Forward Voltage VSD IS=--1.6A, VGS=0 --0.9 --1.5 V
Switching Time Test Circuit
PW=10µs
D.C.≤1%
0V
--10V
VIN
P.G 50Ω
G
S
CPH3314
ID= --0.8A
RL=18.7Ω
VDD= --15V
VOUT
VIN
D
0--1--2--3 --4 --5 --6
200
100
300
400
500
600
700
800
0
200
100
300
400
500
600
0
--7 --8 --9 --10
IT02667
0
0
--0.2
--0.4
--1.0
--1.2
--1.4
--2.0
--1.6
--1.8
--0.2
--0.8
--0.6
0
--0.2
--0.4
--1.0
--1.2
--1.4
--2.0
--1.6
--1.8
--0.8
--0.6
--0.5 --1.0--0.8 --0.9--0.1 --0.3 --0.4 --0.6 --0.7
VGS= --3V
--10V
--5V
--6V
--8V
IT02665
--4V
0--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
VDS= --10V
25°C
--25°C
Ta=75°C
IT02666
IT02668
ID= --0.4A, VGS= --4V
ID= --0.8A, VGS= --10V
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ta=25°C
ID= --0.4A --0.8A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
CPH3314
Rev.0 I Page 3 of 4 I www.onsemi.com
0
020 40
0.2
60
0.4
0.6
80 100 120
0.8
1.0
1.2
140 160
IT02674
IT02670
0--0.6--0.4--0.2 --0.8 --1.0 --1.2 --1.4
--0.01
--10
--1.0
--0.1
7
7
5
5
3
3
2
2
7
5
3
2
VGS=0
--25°C
25°C
Ta=75°C
0
0
--2
--4
--6
--8
5.04.53.5 4.02.0 2.5 3.01.00.5 1.5
--10
VDS= --10V
ID= --1.6A
IT02673
IT02669
--0.01
0.1 --0.1
23 57 --1.0
23 57 23
1.0
7
5
3
2
3
2
VDS= --10V
75°C
25°C
Ta= --25°C
yfs -- ID
Drain Current, ID -- A
Forward Transfer Admittance,
y
fs -- S
Diode Forw ard Voltage, VSD -- V
Forward Current, IF -- A
IF -- VSD
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
Mounted on a ceramic board(900mm
2
✕0.8mm)
0
10 --5
100
1000
7
5
3
2
7
5
3
2
--30--10 --15 --20 --25
f=1MHz
Ciss
Coss
Crss
IT02671
100ms
DC operation
1ms
100µs
10ms
IDP= --6.4A
2
3
5
7
2
3
5
7
2
3
5
7
--10
--1.0
--0.1
--0.01 23 57 23 57 23 5
--0.1 --1.0 --10 IT02675
<10µs
Operation in
this area is
limited by RDS(on).
ID= --1.6A
--0.1 --1.0
357 2357 23
100
7
5
3
2
2
10
1.0
7
5
3
VDD= --15V
VGS= --10V
td(on)
td(off)
tr
tf
IT02672
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm
2
✕0.8mm)
CPH3314
Rev.0 I Page 4 of 4 I www.onsemi.com CPH3314/D
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