VS-45EPS12LHM3, VS-45APS12LHM3
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Revision: 22-Feb-18 1Document Number: 96128
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High Voltage Input Rectifier Diode, 45 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
•Flexible solution for reliable AC power
rectification
• High surge, low VF rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRIMARY CHARACTERISTICS
IF(AV) 45 A
VR1200 V
VF at IF1.14 V
IFSM 500 A
TJ max. 150 °C
Package TO-247AD 2L, TO-247AD 3L
Circuit configuration Single
TO-247AD 2L TO-247AD 3L
1
3
2
1
3
2
2
13
Base cathode
Anode Anode
Base cathode
2
13
Anode
Cathode
VS-45APS12LHM3
V
S-45EPS12LHM3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 45 A
VRRM 1200 V
IFSM 500 A
VF20 A, TJ = 25 °C 1.0 V
TJ-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
IRRM
AT 150 °C
mA
VS-45EPS12LHM3 1200 1300 1.0
VS-45APS12LHM3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 109 °C, 180° conduction half sine wave 45
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 420
10 ms sine pulse, no voltage reapplied 500
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 884 A2s
10 ms sine pulse, no voltage reapplied 1250
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 12 500 A2s
VS-45EPS12LHM3, VS-45APS12LHM3
www.vishay.com Vishay Semiconductors
Revision: 22-Feb-18 2Document Number: 96128
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 45 A, TJ = 25 °C 1.14 V
Forward slope resistance rtTJ = 150 °C 7.16 m
Threshold voltage VF(TO) 0.74 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = rated VRRM
0.1 mA
TJ = 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance,
unction to case RthJC DC operation 0.4
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth, and greased 0.25
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AD 2L 45EPS12LH
Case style TO-247AD 3L 45APS12LH
80
90
100
110
120
130
140
150
01020304050
Maximum Allowable Case Temperature (°C)
IT(AV) -Average On-State current (A)
180°
Conduction angle
RthJC (DC) = 0.4 °C/W
30°
60°
90°
120°
80
90
100
110
120
130
140
150
160
01020304050607080
Maximum Allowable Case Temperature (°C)
IT(AV) -Average On-State Current (A)
DC
180°
Conduction angle
RthJC (DC) = 0.4 °C/W
30°
60° 90°
120°
VS-45EPS12LHM3, VS-45APS12LHM3
www.vishay.com Vishay Semiconductors
Revision: 22-Feb-18 3Document Number: 96128
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 35 40 45 50
Average On-State Power Loss (W)
I
F(AV)
-Average On-State Current (A)
180°
120°
90°
60°
30°
RMS limit
Conduction angle
0
10
20
30
40
50
60
70
80
90
0 1020304050607080
Max. Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
RMS limit
DC
Conduction angle
TJ= 150 °C
100
150
200
250
300
350
400
450
110100
Peak Half Sine Wave Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated VRRM applied following surge.
50
100
150
200
250
300
350
400
450
500
0.01 0.1 1 10
Peak Half Sine Wave Forward Curent (A)
Pulse Train Duration (s)
Maximum non-repetitive surge current
vs. pulse train duration
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
1
100
10
1000
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.5 2.0 2.51.51.0 3.0
0
TJ = 25 °C
TJ = 150 °C
VS-45EPS12LHM3, VS-45APS12LHM3
www.vishay.com Vishay Semiconductors
Revision: 22-Feb-18 4Document Number: 96128
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-45EPS12LHM3 25 500 Antistatic plastic tubes
VS-45APS12LHM3 25 500 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions TO-247AD 2L www.vishay.com/doc?95536
TO-247AD 3L www.vishay.com/doc?95626
Part marking information TO-247AD 2L www.vishay.com/doc?95648
TO-247AD 3L www.vishay.com/doc?95007
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
ZthJC Transient Thermal Impedance
(°C/W)
Square Wave Pulse Duration (s)
0.17
Single Pulse
0.5
0.33
0.08
0.25
Steady state value
(DC operation)
2- Current rating (45 = 45 A)
4- Package:
5- Type of silicon:
6- Voltage code x 100 = VRRM
9-
P = TO-247AD
S = standard recovery rectifier
12 = 1200 V
Device code
6
243 5 7
45 E P S 12 L
98
M3HVS-
1
1- Vishay Semiconductors product
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
7- L = long leads
8- H = AEC-Q101 qualified
3- Circuit configuration:
E = single, 2 pins
A = single 3 pins
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 28-May-2018 1Document Number: 95536
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-247AD 2L
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 E 15.29 15.87 0.602 0.625 3
A1 2.21 2.59 0.087 0.102 E1 13.46 - 0.53 -
A2 1.50 2.49 0.059 0.098 e 5.46 BSC 0.215 BSC
b 0.99 1.40 0.039 0.055 Ø K 0.254 0.010
b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800
b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169
b3 1.65 2.34 0.065 0.092 Ø P 3.56 3.66 0.14 0.144
c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275
c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
D2 0.51 1.35 0.020 0.053
0.10 AC
M M
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
2 x b
2 x b2
L
C
(5) L1
1, 2 3
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) F P (Datum B)
F P1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DD
CC
View B
(b1, b3) Base metal
c1
(b, b2)
Section C - C, D - D
(c)
Plating
Outline Dimensions
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Revision: 28-May-2018 1Document Number: 95626
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TO-247AD 3L
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 19.81 20.32 0.780 0.800
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 6.98 - 0.275
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
0.10 AC
M M
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Φ P (Datum B)
Φ P1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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