BFT25A,215 - NXP - Product.Network

1. Product profile

1.1 General description

The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power

amplifiers, such as pocket telephones and pagi ng systems with signal frequencies up

to2GHz.

The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

1.2 Features and benefits

Low current consumption (100 A to 1 mA)

Low noise figure

Gold metallization ensures excellent reliability.

1.3 Quick reference data

[1] Ts is the temperature at the soldering point of the collector tab.

BFT25A

NPN 5 GHz wideband transistor

Rev. 5 — 12 September 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCBO collector-base

voltage open emitter - - 8 V

VCEO collector-emitter

voltage open base - - 5 V

ICDC collector

current --6.5mA

Ptot total power

dissipation up to Ts = 165 C[1] --32mW

hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200

fTtransition

frequency IC = 1 mA; VCE = 1 V;

Tamb =25C;

f = 500 MHz

3.5 5 - GHz

GUM maximum

unilateral power

gain

IC = 0.5 mA; VCE = 1 V;

Tamb = 25 C;

f=1 GHz

-15-dB

F noise figure =opt; IC= 0.5 mA;

VCE = 1 V;

Tamb =25 C; f = 1 GHz

-1.8-dB

=opt; IC= 1 mA;

VCE = 1 V;

Tamb =25 C; f = 1 GHz

-2-dB

Product data sheet Rev. 5 — 12 September 2011 2 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

2. Pinning information

3. Ordering information

4. Marking

[1] * = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W : Made in China.

5. Limiting values

[1] Ts is the temperature at the soldering point of the collector tab.

Table 2. Discrete pinning

Pin Description Simplified outline Symbol

Code: V10

1base

2emitter

3 collector

sym021

Table 3. Ordering information

Type number Package

Name Description Version

BFT25A - plastic surfac e mo un te d package; 3 lea d s SOT23

Table 4. Marking

Type number Marking code[1]

BFT25A 34*

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 8 V

VCEO collector-emitter voltage open base - 5 V

VEBO emitter-base voltage open collector - 2 V

ICDC collector current - 6.5 mA

Ptot total power dissipation up to Ts=165C[1] -32mW

Tstg storage temperature 65 +150 C

Tjjunction temperature - 175 C

Product data sheet Rev. 5 — 12 September 2011 3 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

6. Thermal characteristics

[1] Ts is the temperature at the soldering point of the collector tab.

7. Characteristics

[1] GUM is the maximum unilateral power gain, assuming S12 is zero and

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-s) from junction to soldering point [1] 260 K/W

Table 7. Characteristics

Tj = 25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector cut-off

current IE = 0 A; VCB = 5 V - - 50 nA

hFE DC current gain IC= 0.5 mA; VCE = 1 V 50 80 200

fTtransition

frequency IC = 1 mA; VCE = 1 V;

Tamb = 25 C;

f = 500 MHz

3.5 5 - GHz

Cre feedback

capacitance IC=i

c=0A; V

CB =1 V;

f= 1 MHz - 0.3 0.45 pF

GUM maximum

unilatera l power

gain

IC = 0.5 mA; VCE = 1 V;

Tamb = 25 C; f = 1 GHz [1] -15-dB

F noise figure =opt; IC= 0.5 mA;

VCE = 1 V;

Tamb =25C; f = 1 GHz

-1.8-dB

=opt; IC= 1 mA;

VCE = 1 V;

Tamb =25C; f = 1 GHz

-2-dB

GUM 10 log S21 2

11 2

–1S

22 2

–

------------------------------------------------------ dB=

Product data sheet Rev. 5 — 12 September 2011 4 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

Figure 5, 6, 7 and 8, GUM = maximum unilateral power gain; MSG = maximum stable gain.

VCE =1 V.

Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector

current.

0 50 100 200

mbg247

150

Ptot

(mW)

Ts (°C)

mcd138

100

(mA)

−2

−3

−1

110

IC = ic= 0 A; f = 1 MHz. VCE =1 V; T

amb =25C; f = 500 MHz.

Fig 3. Feedback capacitance as a function of

collector-base voltage. Fig 4. Transition frequency as a function of collector

current.

0.4

0.3

0.1

0.2

mcd103

1234

Cre

(pF)

VCB (V)

012 4

mcd140

3IC (mA)

(GHz)

Product data sheet Rev. 5 — 12 September 2011 5 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

VCE = 1 V; f = 500 MHz. VCE = 1 V; f = 1 GHz.

Fig 5. Gain as a function of collector current. Fig 6. Gain as a function of collector current.

0 0.5 1.0 2.0

mcd104

1.5

MSG

GUM

gain

(dB)

IC (mA)

0 0.5 1.0 2.0

mcd105

1.5

MSG

gain

(dB)

(mA)

VCE =1 V; I

C = 0.5 mA. VCE =1 V; I

C = 1 mA.

Fig 7. Gain as a function of frequency. Fig 8. Gain as a function of frequency.

mcd106

gain

(dB)

f (MHz)

MSG

max

10 10

mcd107

gain

(dB)

f (MHz)

MSG

max

10 10

Product data sheet Rev. 5 — 12 September 2011 6 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

VCE =1 V. V

CE =1 V.

Fig 9. Minimum noise figure as a function of

collector current. Fig 10. Minimum noise figure as a function of

frequency.

mcd145

−1

110

(dB)

(mA)

f =

2 GHz

1 GHz

500 MHz

mcd146

102103104

(dB)

f (MHz)

IC =

2 mA

1 mA

0.5 mA

See Table 8;

Zo= 50 .

Average gain parameter: MSG = 14.5 dB.

Fig 11. Noise circ le figu re.

mcd108

0.2

0.5

0.2

0.5

0.50.2 2

110

−j

∞

stability

circle

pot. unst.

region

Fmin = 1.9 dB

Γopt

11 dB

6 dB

4 dB

MSG

14.5 dB

13 dB

2.5 dB

Product data sheet Rev. 5 — 12 September 2011 7 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

Table 8. Noise parameters

f (MHz) VCE (V) IC (mA) Fmin (dB) opt Rn/50

(mag) (ang)

500 1 1 1.9 0.79 4 2.5

See Table 9;

Zo= 50 .

Average gain parameter: MSG = 11.2 dB.

Fig 12. Noise circle figu re.

Table 9. Noise parameters

f (MHz) VCE (V) IC (mA) Fmin (dB) opt Rn/50

(mag) (ang)

10001120.7482.6

mcd109

0.2

0.5

0.2

0.5

0.50.2 2

110

−j

∞

stability

circle

pot. unst.

region

MSG

11.2 dB

10 dB

8 dB

4 dB

3 dB

min

= 2 dB

opt

Product data sheet Rev. 5 — 12 September 2011 8 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

See Table 10;

Zo= 50 .

Average gain parameter: MSG = 7.7 dB.

Fig 13. Noise circle figu re.

Table 10. Noise parameters

f (MHz) VCE (V) IC (mA) Fmin (dB) opt Rn/50

(mag) (ang)

2000 1 1 2.4 0.72 26 1.7

mcd110

0.2

0.5

0.2

0.5

0.50.2 2

110

−j

∞

stability

circle

pot. unst.

region

7 dB

5 dB

6 dB

MSG

7.7 dB

3 dB

4 dB

min

= 2.4 dB

opt

Product data sheet Rev. 5 — 12 September 2011 9 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

VCE =1 V; I

C=1 mA.

Zo = 50 .

Fig 14. Common emitter input reflection coefficient (S11).

VCE =1 V; I

C=1 mA.

Fig 15. Common emitter forward transmission coefficient (S21).

mcd111

0.2

0.5

0.2

0.5

0.50.2 2

110

−j

∞

40 MHz

3 GHz

mcd112

90°

−90°

−45°−135°

45°135°

0°

180°5 4 3 2 1

3 GHz

40 MHz

Product data sheet Rev. 5 — 12 September 2011 10 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

VCE =1 V; I

C=1 mA.

Fig 16. Common emitter reverse transmission coefficient (S12).

VCE =1 V; I

C=1 mA.

Zo = 50 .

Fig 17. Common emitter output reflection coefficient (S22).

mcd114

90°

−90°

−45°−135°

45°135°

0°

180°0.5 0.4 0.3 0.2 0.1

3 GHz

40 MHz

mcd113

0.2

0.5

0.2

0.5

0.50.2 2

110

−j

∞

3 GHz

40 MHz

Product data sheet Rev. 5 — 12 September 2011 11 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

8. Package outline

Fig 18. Package outline.

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

Product data sheet Rev. 5 — 12 September 2011 12 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

9. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFT25A v.5 20110912 Product data sheet - BFT25A v.4

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Package outline drawings have been updated to the latest version.

BFT25A v.4

(9397 750 13399) 20040706 Product data sheet - BFT25A_CNV v.3

BFT25A_CNV v.3 199712 05 Product specification - -

Product data sheet Rev. 5 — 12 September 2011 13 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

10. Legal information

10.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device (s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

10.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,

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profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

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contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

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Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

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malfunction of an NXP Semiconductors product can reasonably be expected

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damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

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NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 12 September 2011 14 of 15

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

Quick reference data — The Quick reference data is an extract of th e

product data given in the Limiting values and Characteristics sect ions of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims result ing from custome r design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

10.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BFT25A

NPN 5 GHz wideband transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 September 2011

Document identifier: BFT25A

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

10.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11 Contact information. . . . . . . . . . . . . . . . . . . . . 14

12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15