7-75
TN2124
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
BVDSS /R
DS(ON) VGS(th)
BVDGS (max) (max) TO-236AB* Die
240V 15Ω2.0V TN2124K1 TN2124ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1C❋
where ❋ = 2-week alpha date code
Gate Source
Drain
TO-236AB
(SOT-23)
top view
Ordering Information
Low Threshold
7-76
TN2124
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TA = 25°C°C/W °C/W
TO-236AB 134mA 250mA 0.36W 200 350 134mA 250mA
* ID (continuous) is limited by max rated Tj.
Thermal Characteristics
Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage 240 V ID = 1mA, VGS = 0V
VGS(th) Gate Threshold Voltage 0.8 2.0 V VGS = VDS, ID = 1mA
∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/°CI
D = 1mA, VGS = VDS
IGSS Gate Body Leakage 0.1 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 1 µAV
GS = 0V, VDS = Max Rating
100 µAV
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 140 mA VGS = 4.5V, VDS = 25V
RDS(ON) 30 ΩVGS = 3V, ID = 25mA
15 ΩVGS = 4.5V, ID = 120mA
∆RDS(ON) Change in RDS(ON) with Temperature 0.7 1.0 %/°CI
D = 120mA, VGS = 4.5V
GFS Forward Transconductance 100 170 m VDS = 25V, ID = 120mA
CISS Input Capacitance 38 50
COSS Common Source Output Capacitance 9 15 pF VGS = 0V, VDS = 25V, f = 1MHz
CRSS Reverse Transfer Capacitance 3 5
td(ON) Turn-ON Delay Time 4 7
trRise Time 2 5
td(OFF) Turn-OFF Delay Time 7 10
tfFall Time 9 12
VSD Diode Forward Voltage Drop 1.8 V ISD = 120mA, VGS = 0V
trr Reverse Recovery Time 400 ns ISD = 120mA, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
VDD = 25V
ns ID = 140mA
RGEN = 25Ω
Switching Waveforms and Test Circuit
Static Drain-to-Source
ON-State Resistance
Ω
7-77
TN2124
Typical Performance Curves
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0102030 5040
V
DS
(volts)
I(amperes)
D
Saturation Characteristics
1.0
0.8
0.6
0.4
0.2
0246 108
V
DS
(volts)
I(amperes)
D
Maximum Rated Safe Operating Area
0 100010010
0.01
0.1
1.0
0.001
V
DS
(volts)
I(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
00 1.00.2 0.4 0.6 0.8
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Temperature
0 15010050
1.0
0.8
0.6
0.4
0.2
1257525
T
A
C)°(
D
P (watts)
SOT-23
T
A
= 25°C
P
D
= 0.36W
25°C
-55°C
SOT-23 (pulsed)
2V
0
0
0
0
SOT-23
3V
SOT-23 (DC)
TA= 25°C
TA= 125°C
VDS= 25V
VGS = 10V
VGS = 10V
6V
8V
4V
3V
2V
4V
6V
8V
7-78
TN2124
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
GS(th)
V (normalized)
DS(ON)
R (normalized)
V
TH
and R
DS
Variation with Temperature
C)°(
On-Resistance vs. Drain Current
(amperes)
D
(ohms)
DS(ON)
R
BV
DSS
Variation with Temperature
DSS
BV (normalized)
C)°(T
j
Transfer Characteristics
V
GS
(volts)
I(amperes)
D
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
I
010203040
50
75
25
0
0246810
1.0
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
1.1
1.0
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0 0.2 0.4 0.6 0.8 1.0
-50 0 50 100 150
32 pF
VDS = 40V
VDS = 10V
100pF
VGS = 4.5V
VGS = 3V
125°C
0 0.2 0.4 0.6 1.00.8
f = 1MHz
CISS
COSS
CRSS
0.9
2.0
1.6
1.2
0.8
0.4
0
VGS(th) @ 1mA
25°C
T
A
= -55°C
V
DS
= 25V
0
RDS(ON) @ 4.5V, 120mA
