DMV1500L - STMicroelectronics

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Table 1: Main Product Characteristics

DAMPER MODUL.

IF(AV) 4 A 3 A

VRRM 1500 V 600 V

trr (max) 170 ns 50 ns

VF (max) 1.5V 1.4 V

DMV1500L

DAMPER + MODULATION DIODE FOR VIDEO

123

TO-220FPAB

DMV1500LFD

DAMPER

123

MODULATION

TO-220FPAB F5 Bending

DMV1500LFD5

(optional)

September 2004 REV. 1

FEATURES AND BENEFITS

■Full kit in one package

■High breakdown voltage capability

■Very fast recovery diode

■Specified turn on switching characteristics

■Low static and peak forward voltage drop for

low dissipation

■Insulated version:

Insulated voltage = 2000 VRMS

Capacitance = 7 pF

■Planar technology allowing high quality and

best electrical characteristics

■Outstanding performance of well proven DTV

as damper and new faster Turbo 2 600V

technology as modulation

DESCRIPTION

High voltage semiconductor especially designed

for horizontal deflection stage in standard and high

resolution video display with E/W correction.

The insulated TO-220FPAB package includes

both the DAMPER diode and the MODULATION

diode, thanks to a dedicated design.

Assembled on automated line, it offers very low

dispersion values on insulating and thermal

performances.

Table 2: Order Codes

Part Number Marking

DMV1500LFD DMV1500L

DMV1500LFD5 DMV1500L

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Table 3: Absolute Maximum Ratings

Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics

Pulse test: * tp = 5 ms, δ < 2%

** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations :

DAMPER: P = 1.2 x IF(AV) + 0.075 x IF2(RMS)

MODULATION: P = 1.12 x IF(AV) + 0.092 x IF2(RMS)

Table 6: Recovery Characteristics

Symbol Parameter Value Unit

Damper Modul.

VRRM Repetitive peak reverse voltage 1500 600 V

IFSM Surge non repetitive forward current tp = 10ms sinusoidal 50 35 A

Tstg Storage temperature range -40 to +150 °C

TjMaximum operating junction temperature 150 °C

Symbol Parameter Value Unit

Rth(j-c) Junction to case thermal resistance 4.0 °C/W

Symbol Parameter Test conditions

Value

Unit

Tj = 25°C Tj = 125°C

Typ. Max. Typ. Max.

IR * Reverse leakage current Damper VR = 1500 V 100 100 1000 µA

Modul. VR = 600 V 20350

VF ** Forward voltage drop Damper IF = 4 A 1.2 1.7 1.1 1.5 V

Modul. IF = 3 A 1.8 1.1 1.4

Symbol Parameter Test conditions

Value

UnitDamper Modul.

Typ. Max. Typ. Max.

trr Reverse recovery time

IF = 100mA

IR =100mA

IRR = 10mA

Tj = 25°C 850 110 350

IF = 1A

dIF/dt = -50 A/µs

VR =30V

Tj = 25°C 130 170 35 50

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Table 7: Turn-On Switching Characteristics

Symbol Parameter Test conditions Value Unit

Typ. Max.

tfr Forward recovery time

Damper

IF = 4 A

dIF/dt = 80 A/µs

VFR = 3 V

Tj = 100°C 450

IF = 6.5 A

dIF/dt = 50 A/µs

VFR = 3 V

Tj = 25°C 450

Modul.

IF = 3 A

dIF/dt = 80 A/µs

VFR = 2 V

Tj = 100°C 240

VFP Peak forward voltage

Damper

IF = 4 A

dIF/dt = 80 A/µs Tj = 100°C 28 36

IF = 6.5 A

dIF/dt = 50 A/µs Tj = 25°C 13 17

Modul. IF = 3 A

dIF/dt = 80 A/µs Tj = 100°C 8

Figure 1: Power dissipation versus peak

forward current (triangular waveform, δ=0.45)

Figure 2: Average forward current versus

ambient temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

P (W)

F(AV)

I (A)

0 25 50 75 100 125 150

I (A)

F(AV)

DAMPER diode

MODULATION diode

th(j-a) Rth(j-c)

T (°C)

amb

δ=tp/T tp

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Figure 3: Forward voltage drop versus forward

current (damper diode)

Figure 4: Forward voltage drop versus forward

current (modulation diode)

Figure 5: Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 6: Non repetitive peak forward current

versus overload duration (damper diode)

Figure 7: Non repetitive peak forward current

versus overload duration (modulation diode)

Figure 8: Reverse recovery charges versus

dIF/dt (damper diode)

0.0 0.5 1.0 1.5 2.0 2.5 3.0

I (A)

T =125°C

(typical values)

T =125°C

(maximum values)

T =25°C

(maximum values)

V (V)

I (A)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

T =125°C

(typical values)

T =125°C

(maximum values)

T =25°C

(maximum values)

V (V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

Z/R

th(j-c) th(j-c)

t (s)

DAMPER diode

MODULATION diode

Single pulse

1.E-03 1.E-02 1.E-01 1.E+00

I (A)

T =25°C

T =75°C

T =125°C

δ=0.5

t(s)

1.E-03 1.E-02 1.E-01 1.E+00

I (A)

T =25°C

T =75°C

T =125°C

δ=0.5

t(s)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.1 1.0 10.0

Q (nC)

dI /dt(A/µs)

T =125°C

90% confidence

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Figure 9: Reverse recovery charges versus

dIF/dt (modulation diode)

Figure 10: Peak reverse recovery current

versus dIF/dt (damper diode)

Figure 11: Peak reverse recovery current

versus dIF/dt (modulation diode)

Figure 12: Transient peak forward voltage

versus dIF/dt (damper diode)

Figure 13: Transient peak forward voltage

versus dIF/dt (modulation diode)

Figure 14: Forward recovery time versus dIF/dt

(damper diode)

100

150

200

0.1 1.0 10.0 100.0

Q (nC)

dI /dt(A/µs)

T =125°C

90% confidence

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.1 1.0 10.0

I (A)

dI /dt(A/µs)

T =125°C

90% confidence

0.0

1.0

2.0

3.0

4.0

5.0

6.0

1 10 100 1000

I (A)

dI /dt(A/µs)

T =125°C

90% confidence

0 20 40 60 80 100 120 140

V (V)

dI /dt(A/µs)

T =125°C

90% confidence

0 20 40 60 80 100 120 140 160 180 200

V (V)

dI /dt(A/µs)

T =125°C

90% confidence

200

250

300

350

400

450

500

550

600

650

700

0 20 40 60 80 100 120 140

t (ns)

T =125°C

90% confidence

=3V

dI /dt(A/µs)

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Figure 15: Forward recovery time versus dIF/dt

(modulation diode)

Figure 16: Relative variation of dynamic

parameters versus junction temperature

Figure 17: Junction capacitance versus

reverse voltage applied (typical values)

100

125

150

175

200

0 20 40 60 80 100 120 140 160 180 200

t (ns)

T =125°C

90% confidence

=2V

dI /dt(A/µs)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

25 50 75 100 125

QRR

T (°C)

VFP

IRM

I,V,Q [T]/

RM FP RR j I , V , Q [T =125°C]

RM FP RR j

100

1 10 100 1000

C(pF)

V (V)

F=1MHz

V =30mV

T =25°C

OSC RMS

DAMPER diode

MODULATION diode

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Figure 18: TO-220FPAB Package Mechanical Data

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.9 0.173 0.192

B 2.5 2.9 0.098 0.114

D 2.45 2.75 0.096 0.108

E 0.4 0.7 0.016 0.027

F 0.6 1 0.024 0.039

F1 1.15 1.7 0.045 0.067

F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.205

G1 2.4 2.7 0.094 0.106

H 10 10.7 0.393 0.421

L2 16 Typ. 0.630 Typ.

L3 28.6 30.6 1.126 1.205

L4 9.8 10.7 0.385 0.421

L6 15.8 16.4 0.622 0.646

L7 9 9.9 0.354 0.390

Dia. 2.9 3.5 0.114 0.138

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Figure 19: TO-220FPAB F5 Bending (option) Package Mechanical Data

Table 8: Ordering Information

Part Number Marking Package Weight Base qty Delivery

mode

DMV1500LFD DMV1500L TO-220FPAB 2.4 g 50 Tube

DMV1500LFD5 DMV1500L TO-220FPAB F5 2.4 g 45 Tube

Table 9: Revision History

Date Revision Description of Changes

07-Sep-2004 1 First issue

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.9 0.173 0.192

B 2.5 2.9 0.098 0.114

D 2.45 2.75 0.096 0.108

E 0.4 0.7 0.016 0.027

F 0.6 1 0.024 0.039

F1 1.15 1.7 0.045 0.067

F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.205

G1 2.4 2.7 0.094 0.106

H 10 10.7 0.393 0.421

L2 16 Typ. 0.630 Typ.

L3 24.16 26.9 0.951 1.059

L4 1.65 2.41 0.065 0.095

L6 15.8 16.4 0.622 0.646

L7 9 9.9 0.354 0.390

M1 2.92 3.3 0.115 0.130

R 1.4 Typ. 0.055 Typ.

Dia. 2.9 3.5 0.114 0.138

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