Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Base driver for High voltage transistor modules
QM5HG-24
•ICCollector current ............................ 5A
•VCEX Collector-emitter voltage ......... 1200V
•hFE DC current gain................................. 5
•Non-Insulated Type
15.6
13.6
12.6
9.6
5
2
1
5
20
2
4
20
5.45
5.45
2
1
BCE
0.6 2.8
4.4
1.8
0.7
2
4.5
1.5
B
C
E
Feb.1999
Test conditions
VCE=1200V, VEB=2V
VCB=1200V, Emitter open
VEB=7V
IC=3A, IB=0.6A
IC=3A, VCE=1V
VCC=600V, IC=3A, IB1=0.6A, –IB2=1.2A
Transistor part
Diode part
Conductive grease applied
Min.
—
—
—
—
—
5
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Conditions
VEB=2V
Emitter open
Collector open
DC
TC=25°C
DC
Mounting screw M3
Typical value
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX
VCBO
VEBO
IC
PC
IB
Tj
Tstg
—
—
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector dissipation
Base current
Junction temperature
Storage temperature
Mounting torque
Weight
Ratings
1200
1200
7
5.0
100
2
–40~+150
–40~+125
0.59~0.98
6~10
5
Unit
V
V
V
A
W
A
°C
°C
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
50
1.0
1.5
—
1.0
4.0
0.8
1.25
—
0.5
Feb.1999
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
1
10
0
10 7543275432
2
0
10
4
3
2
–1
10
7
5
4
3
7
5
2
–1
10
V
BE(sat)
V
CE(sat)
T
j
=25°C
T
j
=125°C
I
B
=400mA
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
234
0
10
2345
1
10
57 74
I
B
1
=0.6A
T
j
=25°C
T
j
=125°C
-–I
B
2
=1.2A
t
on
t
s
V
CC
=600V
t
f
8
0
01234 5
7
6
5
4
3
2
1
T
j
=25°C
I
B
=200mA
I
B
=100mA
I
B
=1A
I
B
=0.5A
I
B
=400mA
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
–1
10
2345
723457
1
10
T
j
=25°C
T
j
=125°C
V
CE
=1V
V
CE
=5.0V
0
10
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT IC (A)
SWITCHING TIME ton, ts, tf (µs)
