2SK2757-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 500 10 40 35 10 163 80 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=2.98mH, Vcc=50V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=5A VGS=10V 500 3.5 Tch=25C Tch=125C ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=10A VGS=10V 2.5 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. Max. 4.0 4.5 10 500 0.2 1.0 10 100 0.73 0.90 5.0 950 1450 180 270 80 120 25 40 70 110 70 110 45 70 10 1.1 450 5.5 1.65 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.56 75.0 Units C/W C/W 1 2SK2757-01 FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) 100 Safe operating area ID=f(VDS):D=0.01,Tc=25C 90 t=0.01 s 1 s 80 10 70 1 DC 10s 100 s ID [A] PD [W] 60 50 1ms 40 10 0 30 t 20 D= 10ms t T T 10 0 0 50 100 10 150 100ms -1 10 0 10 1 10 o Tc [ C] 2 10 3 VDS [V] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 25 VGS=20V 20 ID [A] ID [A] 0 10 nd e mm 10 n sig ew n for 8V 15 7V 10 . de 1 10 10V -1 6.5V 5 o c e r 6V ot 0 0 5 10 N 15 20 5.5V 5V 25 30 10 35 -2 0 1 2 3 4 5 6 7 8 9 10 VGS [V] VDS [V] Typical drain-source on-state resistance Typical forward transconductance RDS(on)=f(ID):80s Pulse test, Tch=25C gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 5 VGS= 5V 5.5V 6V 6.5V 7V 4 RDS(on) [ ] 1 gfs [s] 10 10 0 3 2 8V 10V 20V 1 10 0 -1 10 -1 10 0 10 1 0 ID [A] 5 10 15 20 ID [A] http://store.iiic.cc/ 2 2SK2757-01 FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=5A,VGS=10V 3.0 6.0 2.5 5.0 2.0 4.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS VGS(th) [V] RDS(on) [ ] max. max. 1.5 typ. min. 3.0 1.0 2.0 0.5 1.0 0.0 0.0 -50 0 50 100 typ. 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic Typical capacitances C=f(VDS):VGS=0V,f=1MHz VGS=f(Qg):ID=10A,Tch=25C 10n 40 400 Vcc=400V 0V 10 c= 0V c V 25 V 0 40 350 300 30 200 20 Ciss nd e mm 15 150 100 100V Coss 100p Crss 10 50 0 0 n sig ew n for C [F] 25 VGS [V] 20 40 ot N 60 80 o c e r 100 120 5 10p 0 140 10 -2 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode Avalanche energy derating IF=f(VSD):80s Pulse test,VGS=0V Eas=f(starting Tch):Vcc=50V,IAV=10A 200 10 1 150 o Tch=25 C typ. 10 10 10 0 Eas [mJ] IF [A] VDS [V] 1n 250 250V . de 35 100 -1 50 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 VSD [V] 50 100 150 o Starting Tch [ C] http://store.iiic.cc/ 3 2SK2757-01 1 10 FUJI POWER MOSFET Transient thermal impedance Zthch=f(t) parameter:D=t/T Zthch-c [K/W] 0 10 D=0.5 0.2 0.1 -1 10 0.05 t 0.02 D= -2 0.01 0 10 -5 10 t T T -4 -3 10 10 -2 10 10 -1 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4