APTGF125X60TE3 3 Phase bridge NPT IGBT Power Module VCES = 600V IC = 125A @ Tc = 80C Application * AC Motor control Features * * * * * 19 18 Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits 17 16 15 14 21 13 1 2 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area * * * * * * * TC = 25C Max ratings 600 180 125 350 20 570 Tj = 125C 300A@480V TC = 25C TC = 80C TC = 25C Unit V A July, 2003 20 Outstanding performance at high frequency operation Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com http://store.iiic.cc/ 1-3 APTGF125X60TE3 - Rev 0 * APTGF125X60TE3 ICES All ratings @ Tj = 25C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGE = 0V, IC = 500A Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 150A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min 600 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 150A RG = 1.5 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 150A RG = 1.5 Min 1.7 Typ Max 1 1 2.0 2.2 500 4.5 Typ 6500 600 115 28 200 2.45 6.5 450 V nA Max Unit pF ns 125 30 ns 225 35 4.6 Symbol Characteristic VF Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 150A VGE = 0V IF = 150A VR = 300V di/dt =800A/s IF = 150A VR = 300V di/dt =800A/s Tj = 25C Tj = 125C Min Typ 1.25 1.2 Tj = 125C 4.7 Tj = 25C 10 Tj = 125C 18 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K RT = Min R25 exp B25 / 50 1 1 - T25 T V 25 Turn off Energy Reverse diode ratings and characteristics Unit V A mA Typ 5 3375 mJ Max 1.6 Unit V mJ C Max Unit k K July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage T: Thermistor temperature RT: Thermistor value at T APT website - http://www.advancedpower.com http://store.iiic.cc/ 2-3 APTGF125X60TE3 - Rev 0 Electrical Characteristics APTGF125X60TE3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink Package Weight IGBT Diode Typ Max 0.22 0.44 2500 M5 -40 -40 -40 3 Unit C/W V 150 125 125 4.5 300 C N.m g Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com http://store.iiic.cc/ 3-3 APTGF125X60TE3 - Rev 0 July, 2003 PIN 21