Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.1, 24-Feb-11 1
Optocoupler, Phototransistor Output, Very High Isolation Voltage
CNY64, CNY65, CNY66
Vishay Semiconductors
DESCRIPTION
The CNY64, CNY65, and CNY66 consist of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
•DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
•IEC 60950/EN 60950
Office machines
•VDE 0804
Telecommunication apparatus and data processing
•IEC60065
Safety for mains-operated electronic and related
household apparatus
•VDE 0700/IEC 60335
Household equipment
•VDE 0160
Electronic equipment for electrical power installation
•VDE 0750/IEC60601
Medical equipment
FEATURES
• Rated recurring peak voltage (repetitive)
VIORM = 1450 Vpeak
• Thickness through insulation 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI 200
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage 300 V
• for appl. class I - IV at mains voltage 600 V
• for appl. class I - III at mains voltage 1000 V according
to DIN EN 60747-5-2 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
AGENCY APPROVALS
• UL1577, file no. E76222 system code H, J, and K
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• VDE related features:
- rated impulse voltage (transient overvoltage),
VIOTM = 12 kV peak
- isolation test voltage (partial discharge test voltage),
Vpd = 2.8 kV peak
C
E
A
C
Top View
17187-5
V
DE
17187-4
CNY65
CNY66
CNY64
ORDERING INFORMATION
CNY 6 # x
PART NUMBER PACKAGE
OPTION
CTR
BIN
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, VDE 50 to 300 63 to 125 100 to 200
DIP-4 HV, 400 mil, high isolation distance CNY64 CNY64A CNY64B
DIP-4 HV, 600 mil, high isolation distance CNY65 CNY65A CNY65B
DIP-4 HV, 700 mil, high isolation distance CNY66 - CNY66B
DIP, 400 mil DIP, 600 mil DIP, 700 mil
10.16 mm 15.24 mm 17.8 mm
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83540
2Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR5V
Forward current IF75 mA
Forward surge current tp 10 μs IFSM 1.5 A
Power dissipation Pdiss 120 mW
Junction temperature Tj100 °C
OUTPUT
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA
Power dissipation Pdiss 130 mW
Junction temperature Tj100 °C
COUPLER
AC isolation test voltage CNY64 t = 1 min VISO 8200 VRMS
DC isolation test voltage CNY65 t = 1 s VISO 13.9 kV
DC isolation test voltage CNY66 t = 1 s VISO 13.9 kV
Total power dissipation Ptot 250 mW
Ambient temperature range Tamb - 55 to + 85 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature 2 mm from case, 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF1.25 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 μA VECO 7V
Collector emitter leakage current VCE = 20 V, IF = 0 A ICEO 200 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA,
RL = 100 fc110 kHz
Coupling capacitance f = 1 MHz Ck0.3 pF
Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.1, 24-Feb-11 3
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Very High Isolation Voltage Vishay Semiconductors
Note
• According to DIN EN 60747-5-2 (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Safety Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IFVCE = 5 V, IF = 10 mA
CNY64,
CNY65,
CNY66
CTR 50 300 %
CNY64A CTR 63 125 %
CNY65A CTR 63 125 %
CNY64B CTR 100 200 %
CNY65B CTR 100 200 %
CNY66B CTR 100 200 %
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test 100 %, ttest = 1 s Vpd 2.8 kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see fig. 2) Vpd 2.2 kV
Insulation resistance
VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
VIO = 500 V, Tamb = 150 °C
(construction test only) RIO 109
Forward current ISI 120 mA
Power dissipation PSO 250 mW
Rated impulse voltage VIOTM 12 kV
Safety temperature TSI 150 °C
0
25
50
75
100
125
150
175
200
225
250
0 25 50 75 100 125 150 175 200
TSI - Safety Temperature(°C)
PSO (mW)
ISI(mA)
t
13930
t1
, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83540
4Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 4 - Test Circuit, Saturated Operation
Fig. 5 - Switching Times
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) td2.6 μs
Rise time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) tr2.4 μs
Fall time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) tf2.7 μs
Storage time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) ts0.3 μs
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) ton 5μs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) toff 3μs
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see fig. 4) ton 25 μs
Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see fig. 4) toff 42.5 μs
Channel I
Channel II
95 10900
R
G
= 50
t
p
t
p
= 50 µs
T= 0.01
+ 5 V
I
C
= 5 mA; adjusted through
input amplitude
I
F
0I
F
50 100
Oscilloscope
R
L
1 M
C
L
20 pF
Channel I
Channel II
95 10843
RG= 50 Ω
tp
tp= 50 µs
T= 0.01
+ 5 V
IC
IF
0
50 Ω1 kΩ
IF= 10 mA
Oscilloscope
RL
≥
CL20 pF
1 MΩ
≤
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf) Turn-off time
96 11698
Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.1, 24-Feb-11 5
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Very High Isolation Voltage Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
Fig. 10 - Collector Current vs. Forward Current
Fig. 11 - Collector Current vs. Collector Emitter Voltage
0255075
0
40
80
120
200
240
280
100
Ptot - Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
160
Coupled device
Phototransistor
IR-diode
21995
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4 2.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
T
amb
- Ambient Temperature (°C)
96 11911
CTR
rel
- Relative Current Transfer Ratio
V
CE
= 5 V
I
F
= 10 mA
1
10
100
1000
0 102030405060708090 100
T
amb
- Ambient Temperature (°C)
96 12000
I
CEO
- Collector Dark Current,
with open Base (nA)
VCE = 20 V
IF = 0
0.1 1 10
0.01
0.1
1
100
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
100
95 11012
10
VCE = 5 V
0.1 1 10
0.1
1
10
100
V
CE
- Collector Emitter Voltage (V)
100
95 11013
I
C
- Collector Current (mA)
5 mA
2 mA
1 mA
IF = 50 mA
10 mA
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83540
6Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
Fig. 12 - Collector Emitter Saturation Voltage vs.
Collector Current
Fig. 13 - Current Transfer Ratio vs. Forward Current
Fig. 14 - Turn-on/Turn-off Time vs. Collector Current
Fig. 15 - Turn-on/Turn-off Time vs. Forward Current
0.1 1 10
1
10
100
1000
CTR - Current Transfer Ratio (%)
IF - Forward Current (mA)
100
95 11015
VCE = 5 V
01015
0
10
20
30
40
50
IF - Forward Current (mA)
20
95 11017
t
on
/t
off
- Turn-on/Turn-off Time (µs)
Saturated operation
V
S
= 5 V
R
L
= 1 kΩ
t
off
t
on
5
04
I
C
- Collector Current (mA)
10
95 11016
Non-saturated
operation
V
S
= 5 V
R
L
= 100 Ω
t
off
t
on
0
5
10
15
20
8
ton/toff - Turn-on/Turn-off Time (µs)
26
Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 2.1, 24-Feb-11 7
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Very High Isolation Voltage Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters FOR CNY64
technical drawings
according to DIN
specifications
Weight: ca. 0.73 g
Creepage distance: > 9.5 mm
Air path: > 9.5 mm
after mounting on PC board
10.16 ± 0.2
12.8 ± 0.1
6.01 ± 0.1
9.1 ± 0.3
5.08 ± 0.2
7.2 ± 0.1
Cath
AColl
E
0.4
0.5
14765
Drawing-No.: 6.544-5038.01-4
Issue: 2; 10.11.98
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83540
8Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
PACKAGE DIMENSIONS in millimeters FOR CNY65
PACKAGE DIMENSIONS in millimeters FOR CNY66
PACKAGE MARKING
14763
technical drawings
according to DIN
specifications
Weight: ca. 1.40 g
Creepage distance: > 14 mm
Air path: > 14 mm
after mounting on PC board
Cath
AColl
E
0.4
0.5
9.6 ± 0.1
7.62 ± 0.2
6.1 ± 0.1
9.1 ± 0.3
15.24 ± 0.2
17.8 ± 0.1
Drawing-No.: 6.544-5036.01-1
Issue: 2; 10.11.98
14764
technical drawings
according to DIN
specifications
Weight: ca. 1.70 g
Creepage distance: > 17 mm
Air path: > 17 mm
after mounting on PC board
9.6 ± 0.1
20.4 ± 0.1
17.8 ± 0.2 7.62 ± 0.2
Cath
AColl
E
0.4
0.5
6.1 ± 0.1
9.1 ± 0.3
Drawing-No.: 6.544-5037.01-4
Issue: x; 10.11.98
21764-73
CNY65A
V YWW J 69
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Revision: 08-Feb-17 1Document Number: 91000
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