© 2002 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• three phase mains rectifier
• brake chopper:
- IGBT with low saturation voltage
- HiPerFREDTM free wheeling diode
• module package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
Applications
drives with
• mains input
• DC link
• inverter or chopper feeding the machine
• motor and generator/brake operation
VRRM = 1200/1600 V
IdAVM = 56 A
Input Rectifier D1 - D6
Symbol Conditions Maximum Ratings
VRRM 1200/1600 V
IFAV TC = 100°C; sine 180° 22 A
IDAVM TC = 100°C; rectangular; d = 1/3; bridge 56 A
IFSM TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A
Ptot TC = 25°C 90 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 45 A; TVJ = 25°C 1.3 1.6 V
TVJ = 125°C 1.2 V
IRVR = VRRM;T
VJ = 25°C 0.2 mA
VR = 0.8 • VRRM;T
VJ = 125°C 0.4 mA
RthJC per diode; rectangular 120° 1.45 K/W
RthJH with heat transfer paste 1.8 K/W
Chopper Diode D
Symbol Conditions Maximum Ratings
VRRM TVJ = 25°C to 150°C 1200 V
IF25 DC; TC = 25°C 15 A
IF80 DC; TC = 80°C 10 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 10 A; TVJ = 25°C 2.6 3.0 V
TVJ = 125°C 1.9 V
IRVR = VRRM;T
VJ = 25°C 0.06 mA
TVJ = 125°C 0.06 mA
IRM IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A
trr VR = 600 V 110 ns
RthJC 3.5 K/W
RthJH with heat transfer paste 5 K/W
214
Advanced Technical Information VUB 50
VRRM Type
V
1200 VUB 50-12 PO1
1600 VUB 50-16 PO1
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System in ECO-PAC 2
D1 D3 D5
D2 D4 D6
K1
D1
G1
A4V16
N7
R9L9X18
D
T
p h a s e - o u t
© 2002 IXYS All rights reserved 2 - 2
Chopper Transistor T
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ± 20 V
IC25 DC; TC = 25°C 18 A
IC80 DC; TC = 80°C 14 A
ICM VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 20 A
VCEK RBSOA; L = 100 µH; clamped inductive load VCES
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C 2.3 2.7 V
TVJ = 125°C 2.7 V
VGE(th) IC = 0.4 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.5 mA
TVJ = 125°C 0.8 mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 50 ns
tr40 ns
td(off) 290 ns
tf60 ns
Eon 1.2 mJ
Eoff 1.1 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
QGon VCE= 600 V; VGE = 15 V; IC = 10 A 45 nC
RthJC 1.4 K/W
RthJH with heat transfer paste 2.7 K/W
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
Dimensions in mm (1 mm = 0.0394")
VUB 50
Module
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 sec 3600 V~
MdMounting torque (M5) 1.5 - 2 Nm
14 - 18 lb.in.
Symbol Conditions Characteristic Values
min. typ. max.
dA, dSpin to heatsink 11.2 mm
Weight 24 g
p h a s e - o u t
