Semiconductor Group 1 1997-11-01
SMT Multi TOPLED
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ
Type Bestellnummer
Ordering Code
SFH 331 Q62702-P1634
GPL06924
CA
EC
32
41 0.4
0.6
0.18
0.12
typ
0.1
0.5
1.1
3.7
3.3
0.7
0.9
1.7
2.1
0.6
0.8
2.3
2.1
2.6
3.0
3.0
3.4
(2.4)
Package marking
Emission color : super-red
SFH 331
Wesentliche Merkmale
●Geeignet für Vapor-Phase Löten und
IR-Reflow Löten
Features
●Suitable for vapor-phase and IR-reflow
soldering
Semiconductor Group 2 1997-11-01
SFH 331
Grenzwerte
Maximum Ratings
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
LED Transistor
Betriebstemperatur
Operating temperature range Top – 55 ... + 100 – 55 ... + 100 °C
Lagertemperatur
Storage temperature range Tstg – 55 ... + 100 – 55 ... + 100 ˚C
Sperrschichttemperatur
Junction temperature Tj+ 100 + 100 ˚C
Durchlaßstrom (LED)
Forward current (LED) IF30 – mA
Kollektorstrom (Transistor)
Collector current (Transistor) IC–15mA
Stoßstrom
Surge current
t≤10 µs, D = 0.005
IFM 500 75 mA
Sperrspannung (LED)
Reverse voltage (LED) VR5–V
Kollektor-Emitter Spannung (Transistor)
Collector-emitter voltage (Transistor) VCE –35V
Verlustleistung
Total power dissipation Ptot 100 165 mW
Wärmewiderstand Sperrschicht/Umgebung
Thermal resistance junction/ambient
Montage auf PC-Board*
(Padgröße ≥ 16 mm 2)
mounting on pcb* (pad size ≥ 16 mm 2)
Sperrschicht / Lötstelle
junction / soldering joint
Rth JA
Rth JS
450
350
450
–
K/W
K/W
* PC-board: G30/FR4
Notes
Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom
Betriebszustand des anderen.
The stated max. ratings refer to the specified chip regardless of the operating status of the other
one.
Semiconductor Group 3 1997-11-01
SFH 331
Kennwerte LED (TA = 25 ˚C)
Characteristics LED
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)
IF = 10 mA
λpeak 635 nm
Dominantwellenlänge (typ.)
Dominant wavelength (typ.)
IF = 10 mA
λdom 628 nm
Spektrale Bandbreite bei 50 % Irel max (typ.)
Spectral bandwidth at 50 % Irel max (typ.)
IF = 10 mA
∆λ 45 nm
Abstrahlwinkel bei 50 % IV (Vollwinkel)
Viewing angle at 50 % IV
2ϕ120 Grad
degr.
Durchlaßspannung (typ.)
Forward voltage (max.)
IF = 10 mA
VF
VF
2.0
2.6 V
V
Sperrstrom (typ.)
Reverse current (max.)
VR = 5 V
IR
IR
0.01
10 µA
µA
Kapazität (typ.)
Capacitance
VR = 0 V, f = 1 MHz
C012 pF
Schaltzeiten:
Switching times:
IV from 10 % to 90 % (typ.)
IV from 90 % to 10 % (typ.)
IF = 100 mA, tp = 10 µs, RL = 50 Ω
tr
tf
300
150 ns
ns
Lichtstärke (Gruppe JK) (typ.)
Luminous intensity (group JK)
IF = 10 mA
IV6 (4.0 ... 12.5) mcd
Semiconductor Group 4 1997-11-01
SFH 331
Kennwerte Fototransistor (TA = 25 oC, λ = 950 nm)
Characteristics Phototransistor
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 860 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ380 ... 1150 nm
Bestrahlungsempfindliche Fläche (∅ 240 µm)
Radiant sensitive area (∅ 240 µm) A0.045 mm2
Abmessung der Chipfläche
Dimensions of chip area L×B0.45 ×0.45 mm × mm
Abstand Chipoberfläche zu Gehäuseober-
fläche
Distance chip front to case surface
H0.5 ... 0.7 mm
Halbwinkel
Half angle ϕ±60 Grad
degr.
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E= 0
CCE 5.0 pF
Dunkelstrom
Dark current
VCE = 25 V, E= 0
ICEO 1 (≤200) nA
Fotostrom
Photocurrent
Ee = 0.1 mW/cm2,VCE = 5 V
IPCE ≥16 µA
Anstiegszeit/Abfallzeit
Rise time/Fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr,tf7µs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = 5 µA, Ee = 0.1 mW/cm2
VCEsat 150 mV
Semiconductor Group 5 1997-11-01
SFH 331
LED Radiation characteristics Irel = f (ϕ)
Phototransistor Directional characteristics Srel =f (ϕ)
LED Relative spectral emission Irel =f (λ), TA = 25 ˚C, IF= 20 mA
V (λ) = Standard eye response curve
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
%
rel
λ
OHL02350
V
λ
100
80
60
40
20
0400 450 500 550 600 650 700
nm
Φ
super-red
Semiconductor Group 6 1997-11-01
SFH 331
Forward current IF = f (VF)
TA = 25 ˚C
Max. permissible forward current
IF = f (TA)
Forward current VF = f (TA)
IF = 10 mA
Rel. luminous intensity
IV / IV(10 mA) = f (IF), TA = 25 ˚C
Wavelength at peak emission
λpeak = f (TA), IF = 20 mA
Rel. luminous intensity
IV / IV(25 ˚C) =f (TA), IF = 10 mA
Perm. pulse handling capability IF = f (tp)
Duty cycle D = parameter, TA = 25 ˚C
Dominant wavelength λdom = f (TA)
IF = 20 mA
10
-1
V
5
super-red
OHL02351
Ι
F
F
V
0
10
1
10
2
10
5
mA
1.0 1.4 1.8 2.2 2.6 3.0 3.4
60
OHL01661
Ι
F
0100604020
A
800
T
10
20
30
40
50
˚C
mA
green
super-red
orange
yellow pure-green
1.4
OHL02106
V
F
˚C
A
T
0 20406080100
1.6
1.8
2.0
2.2
V
2.4
V
V
(10mA)
10
-1 0
10 10
12
10
mA
10
-3
5
OHL02316
F
Ι
5
-2
10
5
-1
10
0
10
1
10
ΙΙ
55
super-red
green
yellow
orange
super-red
pure-green
550
OHL02104
λ
peak
˚C
A
T
0 20406080100
570
590
610
630
650
nm
690
yellow
green
orange
super-red
pure-green
0.0
OHL02150
˚C
A
T
0 20406080100
V
V
Ι
Ι
0.4
0.8
1.2
1.6
2.0
(25 ˚C)
OHL01686
s10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
D
Ι
TT
P
F
t
P
=
D
=0.005
0.01
0.02
0.05
0.2
0.5
DC
10
1
5
Ι
F
t
2
10
0.1
p
10
3
mA
yellow
green
orange
super-red
pure-green
550
OHL02105
λ
dom
˚C
A
T
0 20406080100
570
590
610
630
650
nm
690
Semiconductor Group 7 1997-11-01
SFH 331
Phototransistor
Rel. spectral sensitivity Srel =f (λ)
Total power dissipation
Ptot = f (TA)
Dark current
ICEO = f (TA), VCE = 5 V, E = 0
Photocurrent IPCE =f (VCE),
Ee = Parameter
Capacitance
CCE =f (VCE), f = 1 MHz, E = 0
Photocurrent IPCE =f (Ee), VCE = 5 V
Dark current
ICEO = f (VCE), E = 0
Photocurrent IPCE/IPCE25o = f (TA),
VCE = 5 V
λ
OHF01121
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
-25
nA
0 25 50 75 100
˚C
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
E
OHF01924
e
PCE
Ι
10
-1
10
-3
10
-2
10
0
10
0
10
1
10
2
10
3
2
mW/cm
2
3
4
µ
A
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
