Single Power MOS FET ELM13400xA ELM13401xAELM13400xXA\ n-channel ennancement Mode Power MOS FET m@ GENERAL DESCRIPTION ELM13400xA Series uses advanced trench technology to provide excellent Rosom, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The packages are very small SOT-23, SOT-26 and SOP-8. mi FEATURES Vos(V ) =30V * b=5.8A~8.5A * Low Rosson < 24~28m 22.(Vcs= 10V) + Low gate charge + Package : SOT-23, SOT-26 and SOP-8 m@ APPLICATION * Load switch * PWM applications MSELECTION GUIDE Symbol ELM13400xA A: SOP-8 A A a Package Type C : SOT-23 ab E : SOT-26 b Product Version A Version m@ MARKING SOT-23 SOP-8 @ : Represents ELM13400xA product [ ee B ELM @ : Represents assembly lot number A~Z repeated (1,0,X excepted) OD @ @ D @ @ @ : Represents assembly lot number e 0~9 repeated CI I] CIODICICI @: Represents assembly house AorB SOT-26 | OROROMC) e LJ LJ td I AA L.L.i WNELM1 3400CA N-Channel Enhancement Mode Power MOS FET m@ GENERAL DESCRIPTION The ELM13400CA uses advanced trench technology to provide excellent Rosom, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. mM FEATURES Vos(V)=30V * bb=5.8A . Rosiony< 28m 22(V. Gs= 10V) Rosny < 33m 2 (Ves= 4.5V) s Rosoon< 52m 2 (Ves= 2.5V) SOT-23 D Top View Go 1D S G s Absolute Maximum Ratings Ta=25C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage Vos 30 Vv Gate-Source Voltage Ves +12 Vv Continuous Drain Ta=25C lo 5.8 Current* Ta=70 49 A Pulsed Drain Current low 30 Ta=25C 1.4 Power Dissipation Ta=70C Pe 1 W Junction and Storage Temperature Range Tu, Tsta -55 to 150 Cc Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient* ts 10s R 65 90 C/W OA Maximum Junction-to-Ambient* Steady-State 85 125 C/W Maximum Junction-to-Lead Steady-State Rest 43 60 C/W FI AA LLIN TECHNOLOGY 12N-Channel Enhancement Mode Power MOS FET ELM13400CA Electrical Characteristics (T:.=25C unless otherwise noted) Symbol Parameter Conditions | Min | Typ Max | Units STATIC PARAMETERS BVoss Drain-Source Breakdown Voltage lb=250uA, Ves=O0V 30 Vv loss Zero Gate Voltage Drain Current Vose24V, Ves=0V { uA | Tu=55'C 5 less Gate-Body leakage current Vos=0V, Ves= + 12V 100 | nA Vestn) Gate Threshold Voltage Vos=Ves, 1p=250pA 0.7 11 1.4 V Ip(on) On state drain current Ves=4.5V, Vos=5V 30 A Ves=10V, lo=5.8A 228 | 28 mQ Roscony Static Drain-Source On-Resistance | Tet 25C 32 38 Ves=4.5V, Ib=5A 27.3 33 mQ Vas=2.5V, In=4A 43.3 52 mgQ Ors Forward Transconductance Vos=5V, lb=5A 10 15 $ Vso Diode Forward Voltage Is=1A, Ves=0V 0.71 1 Vv Is Maximum Body-Diode Continuous Current 25 A DYNAMIC PARAMETERS Ciss Input Capacitance 823 pF Coss Output Capacitance Ves=0V, Vos=15V, f= 1MHz 99 pF Crss Reverse Transfer Capacitance 77 pF Ro Gate resistance Ves=0V, Vos=0V, f=1 MHz 1.2 Q SWITCHING PARAMETERS Qa Total Gate Charge 9.7 nc Qys Gate Source Charge Ves=4.5V, Vos=15V, lb=5.8A 1.6 nc Qua Gate Drain Charge 3.1 nC toon) Turm-On Delay Time 5.5 ns t Turm-On Rise Time Ves=10V, Vos=15V, Ri=2.7Q, 5.1 ns tovorn Turn-Off Delay Time Reen=6 O 37 ns tr Tum-Off Fall Time 4.2 ns tr Body Diode Reverse Recovery Time F=5A, di/dt=100A/us 16 ns Qn Body Diode Reverse Recovery Charge | Ir=5A, di/dt=100A/us 8.9 nc A: The value of Resa is measured with the device mounted on 1in? FR-4 board with 20z. Copper, in a still air environment with Ta=25c . The value in any a given application depends on the user's specific board design. The current rating is based on the t< 10s thermal resistance rating. B: Repetitive rati ing, pulse width limited by junction temperature. C: The Roya is the sum of the thermal impedance from junction to fead Rey and lead to ambient. D: The static characteristics in Figures 1 to 6, 12, 14 are obtained using 80s pulses, duty cycle 0.5% max. E: These tests are performed with the device mounted on 1 ir? FR-4 board with 20z. Copper, in a still air environment with Ta=25c. The SOA curve provides a single pulse rating. FI AAR LLINN TECHNOLOGY 13N-Channel Enhancement Mode Power MOS FET ELM13400CA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 20 16 Vos88Vo 15 2.5V. 12 Ip (A) Ip(A) 8 / 125C Ves=2V 4 A ox 10 DZ 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 Vos (Voits) Ves(Volts) Fig 1: OnRegion Characteristics Figure 2: Transfer Characteristics 1.8 8 5 1.6 ~ 3 yore & g ZB a g 1.2 Veg=2.5V 4 ie} 5 1 z 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 Ip (A) Temperature (C) Figure 3: OnResistance vs. Drain Current Figure 4: OnResistance vs. Junction Gate Voltage Temperature 1.0E+01 a 4.0E+00 4 J. 1.0E-01 g 125C It < 1.0E-02 z = / [ 1.0E-03 25C 1.0E-04 1.0E-05 / / 0 2 4 6 8 10 ESS . : . : 0.8 1.0 1.2 Ves (Volts) 0.0 02 0.4 0.6 Figure 5: OnResistance vs. GateSource Voltage Vsp (Volts) Figure 6: BodyDiode CharacteristicsN-Channel Enhancement Mode Power MOS FET ELM13400CA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 : 1400 Vps=15V So Ip=5A 1200 4 f- Y / z 4000 @ 3 a z vA 800 = / & 3 2 g 600 o f 400 41 4 200 0 0 0 2 4 6 8 10 12 0 5 10 15 20 25 30 Q, (nC) Vos (Volts) Figure 7; Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 40 sr LTE TTT Tuan 150C | Tata 150C |) Ta=25C | T.=25C 4 Rosyon) af 30 iL 40.0 | limited | 100ns L z = e = | 5 20 ' < 3 / 2 a i j : 1.0 ! 10 i i ! . 0.1 0 04 j 40 400 0.001 0.01 0.1 1 10 100 1000 Vos (Volts) Pulse Width (s) Figure 9: Maximum Forward Biased Safe Figure 19: one rablent Nowe) Junction-to- Operating Area (Note E) 10 D=Ton!(Tont Tort) In descending order Ty pk=TatPom-Zoa-Rava D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Raa=90C/W 0.1 Zsa Normalized Transient Thermal Resistance Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance EI AA LLINN TECHNOLOGY 1SELM1 3400EA N-Channel Enhancement Mode Power MOS FET m@ GENERAL DESCRIPTION The ELM13400EA uses advanced trench technology to provide excellent Reso, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Mm FEATURES * Vos(V)=30V * 1b=6.9A * Rosoony< 28m Q(Ves= 10V) 2 Rnsony< 33m Q (Vos= 45V) 2 Roson< 52m QVc= 2.5V) SOT-26 Top View D Dol #66fp DoW 56D Gro43 45S G S$ Absolute Maximum Ratings Ta=25C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage Vos . 30 Vv Gate-Source Voltage Ves +12 Vv Continuous Drain Ta=25C lo 6.9 Current* Ta=70C 5.8 A Pulsed Drain Current lom 35 =25% 2 a Ta=25 P, W Power Dissipation* Ta=70C 1.44 Junction and Storage Temperature Range Ty, Tsts -55 to 150 c Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient* tS 10s R 47.5 62.5 C/W Maximum Junction-to-Ambient* Steady-State we 74 110 Cc/W Maximum Junction-to-Lead Steady-State Rest 37 50 C/W Fi AA LLIN TECHNOLOGYN-Channel Enhancement Mode Power MOS FET ELM13400EA Electrical Characteristics (T:=25C unless otherwise noted) Symbol | Parameter | Conditions [| Min | Typ | Max | Units STATIC PARAMETERS BVoss Drain-Source Breakdown Voltage Ib=250uA, Vas=O0V 30 Vv loss Zero Gate Voltage Drain Current Voss24V), Ves-OV 1 LA | Tu=55C 5 less Gate-Body leakage current Vos=0V, Ves=+12V 100 nA Vesn) Gate Threshold Voltage Vos=Ves, l>=250pA 0.7 1.1 1.4 Vv ID(on) On state drain current Ves=4.5V, Vos=5V 35 A Ves=10V, ln=6.9A 22.3 | 28 moQ Rosion) Static Drain-Source On-Resistance | Tet28 315 | 39 Ves=4.5V, lo=6A 268 | 33 | mg Ves=2.5V, ln=5A 42.8 52 mQ Ors Forward Transconductance Vos=5V, lo=5A 10 15 S Vso Diode Forward Voltage Ils=1A, Vos=0V 0.71 1 V Is Maximum Body-Diode Continuous Current 3 A DYNAMIC PARAMETERS Ciss Input Capacitance 823 pF Coss Output Capacitance Ves=0V, Vos=15V, f=1MHz 99 pF Ciss Reverse Transfer Capacitance 77 pF Rg Gate resistance Ves=0V, Vos=0V, f=1 MHz 1.2 Q SWITCHING PARAMETERS Qs Total Gate Charge 9.6 nc Qys Gate Source Charge Ves=4.5V, Vos=15V, lo=5.8A 1.65 nc Qos Gate Drain Charge 3 nc tovony Tum-On Delay Time 5.5 ns t Tum-On Rise Time Ves=10V, Vos=15V, Ri=2.72, 5.1 ns tovor Turn-Off Delay Time Reen=6 2 37 ns tr Tum-Off Fall Time 4.2 ns te Body Diode Reverse Recovery Time lr=5A, di/dt=100A/us 16 ns Qn Body Diode Reverse Recovery Charge | [r=5A, di/dt=100A/us 8.9 nc A: The value of Rea is measured with the device mounted on tin? FR-4 board with 20z. Copper, in a still air environment with Ta=25'c. The value in any a given application depends on the user's specific board design. The current rating is based on the t= 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C: The Roza is the sum of the thermal impedance from junction to lead Rest and lead to ambient. D: The static characteristics in Figures 1 to 6, 12, 14 are obtained using 80s pulses, duty cycle 0.5% max. E: These tests are performed with the device mounted on 1 in? FR-4 board with 202. Copper, in a still air environment with Ta=25'c, The SOA curve provides a single pulse rating. El AA LINN TECHNOLOGY 17N-Channel Enhancement Mode Power MOS FET ELM13400EA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 // 16 Vps=5V / [ 125 Ves=2V > | Z 0 at 2.5V 12 Ip (A) Ip{A) 2 3 4 5 0 0.5 1 15 2 2.5 3 Vos (Volts) Ves(Volts) Fig 1: OnRegion Characteristics Figure 2: Transfer Characteristics 60 1.8 2 50 3 1.6 _ 3 Ves=4.5V gE 40 a 14 fo Vigg=10V g a 30 g 1.2 Ves22.5V 0" 3 20 & 1 z 10 0.8 0 5 10 15 20 0 25 50 75 100 125 160 175 Ip (A) Temperature (C) Figure 3: OnResistance vs. Drain Currentaan Figure 4: OnResistance vs. Junction Gate Voitage Temperature 1.0E+01 Po 1.0E+00 7 fo. 1.0E-01 g 125C / = @ 1.0E-02 g = / / a 1.0E-03 25C 1.0E-04 1.0E-05 / / 0 2 4 6 8 10 1.0E-06 ! 0.2 0.4 : 0.8 1.0 1.2 Ves (Volts) be oe Vsp (Volts) Figure 6: BodyDiode Characteristics Figure 5: OnResistance vs. GateSource Voltage FI AA LLIN TECHNOLOGY 18N-Channel Enhancement Mode Power MOS FET ELM13400EA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vos=15V_ / Ip=6.9A J 4 7 #3 f- $ / 8 2 14 0 0 2 4 6 8 10 Q, (nc) Figure 7: Gate-Charge Characteristics 100.0 Tumag= 150C Ta=25C Roson) bot 40.0 |.limited 100us . @ a E < = 1.0 0.1 Zsa Normalized Transient Thermal Resistance 0.1 10 0.1 0.01 0.00001 Vos (Vv olts) Figure 9: Maximum Forward Biased Safe 10 Operating Area (Note E) D=Ton/(Tont Ton) Ty px=TatPpm-Z oa-Roia Reya=90C/W in descending order 12 100 1400 1200 c 1000 8 800 & g 600 a 0 9 400 200 0 0 5 10 15 20 25 30 Vos (Volts) Figure 8: Capacitance Characteristics 40 ng qe TATE TTT ye Tie 150C i a :Ta=25C i 30 i ; : a u i i 1 f | # Vl cil 5 20 He A ; i z \. A | nae Ng 10 ; a Nu i 0 = 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Single Pulse 0.0001 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal ImpedanceELM1 3400AA N-Channel Enhancement Mode Power MOS FET m@ GENERAL DESCRIPTION The ELM13400AA _ uses advanced trench technology to provide excellent Rosow, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. m FEATURES * Vos(V)=30V * 1b=8.5A & Rosion < 24m 2(Vas= 10V) . Rosony < 30m 2 (Vcs= 4.5V) * Rosony< 48m 2(Ves= 2.5V) SOP-8 5 Top View smi 8 D scm2 70D soe s6mp Gos 5D G S Absolute Maximum Ratings Ts=25'G unless otherwise noted ; Parameter Symbol Maximum Units Drain-Source Voltage Vbs 30 Vv Gate-Source Voltage Ves +12 V Continuous Drain Ta=25C | 8.5 iD Current* Ta=70C 7.1 A Pulsed Drain Current low 60 Ta=25 3 oe , Po Ww Power Dissipation Ta=70 2.1 Junction and Storage Temperature Range Ty, Tste -55 to 150 Cc Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient* tS.10s Fa 31 40 C/W Maximum Junction-to-Ambient* Steady-State me 59 75 *C/W Maximum Junction-to-Lead Steady-State Rest 16 24 C/W JI AA LoL.J NN TECHNOLOGY 20N-Channel Enhancement Mode Power MOS FET ELM13400AA een enn eee ee ee TN Electrical Characteristics (l=25C unless otherwise noted) Symbol | Parameter | Conditions | Min | typ | Max | Units STATIC PARAMETERS BVpss Drain-Source Breakdown Voltage lo=250pA, Ves=0V 30 Vv loss Zero Gate Voltage Drain Current Vpen2a, Mos=OV ] LA | Tu=55'c 5 less Gate-Body leakage current Vos=0V, Ves=+12V 100 |; nA Vestn Gate Threshold Voltage Vos=Ves, lo=250uA 0.7 1 1.4 Vv loony On state drain current Ves=4.5V, Vos=5V 40 A Ves=10V, lo=8.5A 20.5 | 24 mQ Rosion) Static Drain-Source On-Resistance | Eee = eS Vos=4.5V, lp=8.5A 25 30 mQ Vas=2.5V, lo=5A 40 48 | mQ Qrs Forward Transconductance - | Vos=5V, lb=5A 10 16 $ Vso Diode Forward Voltage Is=1A, Ves=OV 0.71 1 Vv Is Maximum Body-Diode Continuous Current 43 A DYNAMIC PARAMETERS Ciss input Capacitance 857 pF Coss Output Capacitance Vas=0V, Vos=15V, f=1MHz 97 pF Crss Reverse Transfer Capacitance 71 pF Rg Gate resistance Ves=0V, Vos=0V, f=1MHz 1.4 Q SWITCHING PARAMETERS Qa Total Gate Charge 9.7 nC Qus Gate Source Charge Ves=4.5V, Vos=15V, lb=8.5A 1.63 nC Qgs Gate Drain Charge 3.1 nc toon) Turn-On Delay Time 1.4 ns t Turn-On Rise Time Ves=10V, Vos=15V, Ri=1.80, 4 ns fovorn Tum-Off Delay Time Reen=6 2 33 ns tr Turn-Off Fall Time 5 ns tr Body Diode Reverse Recovery Time [F=5A, di/dt=100A/us 15 ns Qn Body Diode Reverse Recovery Charge | |r=5A, di/dt=100A/us 8.6 nc A: The value of Resa is measured with the device mounted on tin? FR-4 board with 20z. Copper, in a still air environment with Ta=25c. The value in any a given application depends on the user's specific board design. The current rating is based on the t= 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C: The Rea is the sum of the thermal impedance from junction to lead Rei. and lead to ambient. D: The static characteristics in Figures 1 to 6 are obtained using 80us pulses, duty cycle 0.5% max. E: These tests are performed with the device mounted on 1 in? FR-4 board with 20z. Copper, in a still air environment with Ta=25c, The SOA curve provides a single pulse rating.N-Channel Enhancement Mode Power MOS FET ELM13400AA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 / 16 Vos=5V _~ 12 < < o a 8 125 25C 4 /] 0 LZ 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 Vos (Volts) Ves(Volts) Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 60 1.8 L 8 Ves=2.5V a g 18 os 4 Ves=4.5V \ 40 nee S = a 1.4 Ves=1 OV z 8 2 30 3 =2.5V oe Vasn4 BV iS 1.2 Ves=2.5V S 20 ee 7 aii: E 4 Ves=10V = 10 0.8 0 5 10 15 20 - 0 25 50 75 100 125 150 175 Ip (A) Temperature (C) Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Gate Voltage : Temperature 100 1.0E+01 aD 90 1.0E+00 ff. i / / 1.0E-01 @ 70 125C / 60 q 1.0E-02 & 50 2 / / s 1.0E-03 e 40 25C 30 1.0E-04 20 1.0E-05 . Lil 0 2 4 6 8 10 TOE-06 0.0 0.2 0.4 0.6 0.8 1.0 12 Ves (Volts) It Figure 5: On-Resistance vs. Gate-Source Voltage sD Wo =) a Figure 6: Body-Diode Characteristics mi AA an LLIN TECHNOLOGYN-Channel Enhancement Mode Power MOS FET ELM13400AA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 ; 1400 Vps=1 5V So Ip=8.5A , 1200 4 7 J 1000 [-5 23 f 2 Sp 8 800 S / 5 32 a 3 600 > f S CJ oO 400 1 4f 200 0 0 0 2 4 6 8 10 12 Q, (nC) Vos (Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 400.0 i Tamaxy=1 50C i Ta=25C T. WMaxj=1 50C Rps(on) Ta=25C limited 10.0 (p (Amps) Power (W) 1.0 0.1 0.1 1 40 1400 0.001 0.01 0.1 1 10 100 1000 Vos (Voits) Pulse Width (s) . Figure 10: Single Pulse Power Rating Junction-to- Figure 9: Maximum Forward Biased Safe Ambient (Note E) Operating Area (Note E) 10 D=Ton/(Ton* To) In descending order Ty px=TatPpm-ZoumRasa D=0.5, 0.3, 0.1, 0.05, 0.02, 0.04, single pulse Rasa=40C/W = Ss a Zaya Normalized Transient Thermal Resistance Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal ImpedanceELM 3401 XA P-Channel Enhancement Mode Power MOS FET m GENERAL DESCRIPTION ELM13401xA Series uses advanced trench technology to provide excellent Rosox, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Mm FEATURES Low Rosony :Roson< 46m~50m 22.(Ves=-10V) + Low gate charge * Package : SOT-23, SOT-26 and SOP-8 m APPLICATION * Load switch * PWM applications W SELECTION GUIDE Symbol ELM13401xA A: SOP-8 4 A a Package Type C : SOT-23 ab E : SOT-26 b Product Version A Version mg MARKING SOT-23 SOP-8 @ : Represents ELM13401xA product [ flr it if] A E LM @ : Represents assembly lot number . A~Z repeated (1,0,X excepted) @ Qe @ : Represents assembly lot number e 0~9 repeated L_] [_J LItCIcCI LI @ : Represents assembly house AorB SOT-26 | OROROMC) e LJbLJ LJ I AA L.LoI WN TECHNOLOGY 24ELM1 3401 CA P-Channel Enhancement Mode Power MOS FET m GENERAL DESCRIPTION The ELM13401CA uses advanced trench technology to provide excellent Rosow, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. mm FEATURES * Vo(V)=-30V In=-4.2A * Rosin < 50m $2 (Ves =-10V) s Rosen < 65m 2 (Ves= -4.5V) s Roswon < 120m Q(Vas= -2.5V) SOT-23 7 Top View qq D so G s Absolute Maximum Ratings Ts=25C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage Vos -30 Vv Gate-Source Voltage Ves +12 Vv Continuous Drain Ta=25C to -4.2 Current* Ta=70C -3.5 A Pulsed Drain Current lom -30 Ta=25% 1.4 Power Dissipation* Po 1 Ww Junction and Storage Temperature Range Tu Tst6 -55 to 150 Cc Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient* ts 10s R 65 90 C/W Maximum Junction-to-Ambient* Steady-State me 85 125 Cc/W Maximum Junction-to-Lead* Steady-State Rout 43 60 C/W Fi AA L. Lo! W TECHNOLOGYP-Channel Enhancement Mode Power MOS FET ELM13401CA Electrical Characteristics (T.=25C unless otherwise noted) Symboi | Parameter | Conditions | Min | Typ | Max | Units STATIC PARAMETERS BVoss Drain-Source Breakdown Voltage Ip=-250A, Ves=0V -30 Vv loss Zero Gate Voltage Drain Current Voe=iee, Ves=OM = LA | T=55'C 5 loss Gate-Body leakage current Vos=0V, Ves=+12V +100] nA Vesen) Gate Threshold Voltage Vos=Ves, l>=-2504A -0.7 -1 -1.3 Vv IDcony On state drain current Ves=-4.5V, Vos=-5V -25 A Ves=-10V, In=-4.2A 42 50 ine Roscon) Static Drain-Source On-Resistance | Tete fe Ves=-4.5V, lb=-4A 53 65 mQ Ves=-2.5V, In=-1A 80 120 | mQ Ors Forward Transconductance Vos=-5V, lp=-5A 7 11 S Vsp Diode Forward Voltage Is=-1A, Ves=0V 0.75) -1 V Is Maximum Body-Diode Continuous Current 2.2 A DYNAMIC PARAMETERS Coss Input Capacitance 954 pF Coss Output Capacitance Ves=O0V, Vos=-15V, f=1MHz 115 pF Crss Reverse Transfer Capacitance 77 pF Ra Gate resistance Ves=0V, Vos=0V, f= MHz 6 Q SWITCHING PARAMETERS Qg Total Gate Charge 9.4 nC Qe Gate Source Charge Ves=-4.5V, Vos=-15V, lo=-4A 2 nc Qot Gate Drain Charge 3 nc to(on) Turn-On Delay Time ; 6.3 ns t. Turn-On Rise Time Ves=-10V, Vos=-15V, Ri=3.60, 3.2 ns toro Turn-Off Delay Time Reen=6 O 38.2 ns t Turm-Off Fall Time 12 ns tr Body Diode Reverse Recovery Time Ir=-4A, di/dt=100A/ys 20.2 ns Qu Body Diode Reverse Recovery Charge | Ir=-4A, di/dt=100A/us 11.2 nC A: The value of Reva is measured with the device mounted on tin? FR-4 board with 202. Copper, in a still air environment with Ta=25'c. The value in any a given application depends on the user's specific board design. The current rating is based on the t< 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C: The Reua is the sum of the thermal impedance from junction to lead Rest and lead to ambient. D: The static characteristics in Figures 1 to 6, 12, 14 are obtained using 80x pulses, duty cycle 0.5% max. E: These tests are performed with the device mounted on 1 in? FR-4 board with 20z. Copper, ina still air environment with Ta=25'c, The SOA curve provides a single pulse rating. EI AA LLINN TECHNOLOGY 26P-Channel Enhancement Mode Power MOS FET ELM13401CA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25.00 10 1 ; i i / Vps=-5V 20.00 8 -3V _ 15.00 _ 6 < < / 2 -2.5V 7 10.00 4 of 5.00 Ves=-2V 2 Y ane 0.00 0 A 0.00 1.00 2.00 3.00 4.00 5.00 0 0.5 1 1.5 2 2.5 3 Vos (Volts) -Vcs(Volts) Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 120 7 1.8 | | | 400 a 3 16 Ip=-3.5A, Vesr4.5V_ _ 3 Ip=-3.5A, Veg=-10V we Z 80 fw Veg=-2.5V 8 14 x i Gs7"e. or ic | 7S 2 60 Veg=-4.5V B12 Gs25V a N me i Ss Ip=-1A 3 40 ee a ee ; o 1 a < 20 : 0.8 0.00 2.00 4.00 6.00 8.00 10.00 0 25 50 75 100 125 150 175 lp (A) Temperature (C ) Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Gate Voltage Temperature 190 1.0E+01 ee 1 1.0E+00 LY 150 / J 1.0E-01 a 0 125C f E 110 q 1.0E-02 & 90 i [ g 1.0E-03 70 / / 96% 50 4.0E-04 7 ] 30 1.0E-05 [ / 10 Jf 0 2 4 6 8 10 1.0E-06 Ves (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5: On-Resistance vs. Gate-Source Voltage Vsp (Volts) Figure 6: Body-Diode Characteristics FoI ang L. L.i WN TECHNOLOGY 27P-Channel Enhancement Mode Power MOS FET ELM13401CA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 : 1400 Vos=-15V Lo 4 Ip=-4A 7 Y 1200 / c 1000 2 3 f- = 3 Va 8 800 = / 5 oO > 2 tt 8 600 9 400 4 200 0 0 8 2 4 6 8 10 12 0 5 10 15 20 425 30 G2, nc) Vps (Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 Tmax= 150C 40 sf Perey | Tsataxy= 150C i Ta=25C iB R 30 i He _ 10.0 [jose - IN | i i - iN | g 20 - ? & | 1.0 He 10 : 0.1 0 aii 0.1 1 10 400 0.001 0.01 0.1 1 10 100 1000 -Vps (Volts) Pulse Width (s) Figure 9: Maximum Forward Blased Safe Figure 10: Single Pulse Power Rating Junction-to- ae Ambient (Note E) Operating Area (Note E) 10 D=Ton/(Tont Ton) In descending order Ty pk=TatPpa-Zeua-Reua D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Rawa=90 C/W : = a Zosa Normalized Transient Thermal Resistance Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance IAA LLINN TECHNOLOGY 28ELM1 3401 EA P-Channel Enhancement Mode Power MOS FET m GENERAL DESCRIPTION The ELM13401EA_ uses advanced trench technology to provide excellent Rosom, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. mM FEATURES Vos(V)=-30V * Ip=-5A Rosor< 49m Q(Ves= -10V) - Rosiony < 64m 2(Vas= -45V) * Rosen < 119m 2 (Ves= -2.5V) SOT-26 . D Top View D1 6D Dow2 5D Go3 40S G $ Absolute Maximum Ratings Ta=25'C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage Vos -30 Vv Gate-Source Voltage Ves +12 Vv Continuous Drain Ta=25C lo 5 Current* Ta=70C 42 A Pulsed Drain Current fom -30 Ta=25C 2 Pi Power Dissipation 1.44 W Junction and Storage Temperature Range Tu, Tsta -55 to 150 Cc Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient* t = 10s B 475 62.5 c/W Maximum Junction-to-Ambient* Steady-State ms 74 110 Cc/W Maximum Junction-to-Lead Steady-State Rot 37 50 c/W fi AA LLIN N TECHNOLOGY 29P-Channel Enhancement Mode Power MOS FET ELM13401EA Electrical Characteristics (T:=25C unless otherwise noted) Symbol | Parameter | Conditions Min | Typ Max | Units STATIC PARAMETERS BVoss Drain-Source Breakdown Voltage lo=-250yA, Ves=0V -30 Vv loss Zero Gate Voltage Drain Current Vos=-24V, Ves=OV a LA | Ts=55C 5 less Gate-Body leakage current Vos=0V, Vas=+ 12V +100) nA Vasc) Gate Threshold Voltage Vos=Ves, ln=-250A -0.7 -1 -1.3 Vv Ip(on) On state drain current Ves=-4.5V, Vos=-5V -25 A Ves=-10V, lo=-5A 42 49 mae Rosion) Static Drain-Source On-Resistance | Eelese A Ves=-4.5V, Ip=-4A 53 64 mQ Vos=-2.5V, lo=-1A 81 119 | mQ grs Forward Transconductance Vos=-5V, ln=-5A 7 11 S Vsp Diode Forward Voltage Is=-1A, Vas=OV -0.75 | -1 Vv Is Maximum Body-Diode Continuous Current -3 A DYNAMIC PARAMETERS Ciss input Capacitance 943 pF Coss Output Capacitance Ves=0V, Vos=-15V, f=1MHz 108 pF Crss Reverse Transfer Capacitance 73 pF Ro Gate resistance Ves=0V, Vos=0V, f=1MHz 6 Q SWITCHING PARAMETERS Q, Total Gate Charge 9.5 nc Qys Gate Source Charge Ves=-4.5V, Vos=-15V, lo=-5A 2.1 nc Qas Gate Drain Charge 29 nc toon) Turn-On Delay Time ns t Turn-On Rise Time Ves=-10V, Vos=-15V, Ri=3.2, 3 ns torom Turn-Off Delay Time Reen=6 Q 40 ns tr Turn-Off Fall Time 11 ns tr Body Diode Reverse Recovery Time Ir=-5A, di/dt=100A/us 21.2 ns Qn Body Diode Reverse Recovery Charge | Ir=-5A, di/dt=100A/us 12.8 nC A: The value of Rova is measured with the device mounted on 1in? FR-4 board with 20z. Copper, in a still air environment with Ta=25'c. The vaiue in any a given application depends on the user's specific board design. The current rating is based on the t= 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C: The Resa is the sum of the tharmal impedance from junction to lead Rest and lead to ambient. D: The static characteristics in Figures 1 to 6, 12, 14 are obtained using 80us pulses, duty cycle 0.5% max. E: These tests are performed with the device mounted on 1 in? FR-4 board with 20z. Copper, in a still air environment with Ta=25'c. The SOA curve provides a single pulse rating. EI AA LLINN TECHNOLOGY 30P-Channel Enhancement Mode Power MOS FET ELM13401EA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 y ! Vps=-5V [ 8 / ~ 6 < < a a i 4 125C 2 Y ] 25C 0 <2 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 Vos (Volts) Ves(Volts) Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 120 1.6 ' ip=-5A i Ves=-4.5V WZ a 100 = _ Baa Ves-10V we wv g 80 cae Vas=-2.5V AK z 12 pe a so Voes=-2.5V a o > a XN Ip=-2A Ss E 1 6 z 0.8 0 25 50 75 100 125 150 175 Ip (A) Temperature (C) Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Gate Voltage Temperature ve 1.0E+00 LO 150 / / 1.0E-01 e 180 125C fo 110 =z 1.0E-02 6 90 7 [ g 1.0E-03 70 / / 95% 50 1.0E-04 ] ] 30 1.0E-05 [ / 10 / / 0 2 4 6 8 10 105-08 0.0 : : ; : . . Vs (Volts) 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5: On-Resistance vs. Gate-Source Voltage Vsp (Volts) Figure 6: Body-Diode Characteristics FI AA L. Li N TECHNOLOGYP-Channel Enhancement Mode Power MOS FET ELM13401EA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 Vps=-15V J Ip=-5A / 1200 4 pf / < 4000 23 f = 5 J 8 800 2 / oe = > 2 s 600 C S 400 1 200 a 0 0 2 4 6 8 10 12 0 5 10 15 20 25 30 -Q, (nc) Vos (Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 Tamaxy= 4 50C % T i r $ F eS Ta=25 i Tymag= 150C | we ees Tr 25C Rosiony bi : i e q 10 | limited | L eo a & a : : ; # = i ; i + / 1.0 7 | ty 1 : ae | L et 0.1 04 4 40 4055 0.001 0.01 0.1 1 10 400 1000 -Vps (Volts) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/(Tont Torr) In descending order Tu px=TatPpm-Zoua-Raua D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Resa=62.5 C/AW a Zosa Normalized Transient Thermal Resistance Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal impedance LIA CLINN TECHNOLOGY 32ELM1 3401 AA P-Channel Enhancement Mode Power MOS FET m@ GENERAL DESCRIPTION The ELM13401AA_ uses advanced trench technology to provide excellent Roswon, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. m FEATURES Vox(V)=-30V * In=-6.1A . Rosony << 46m Q(Ves =-10V) Roson << 61m Q(Ves= 4.5V) * Reson) < 117m Q(Ves= -2.5V) SOP-8 . D Top View $4! 8 D sc2e 72D scys SD qari Sh D G Ss Absolute Maximum Ratings Ta=25'C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage Vos -30 V Gate-Source Voltage Ves +12 V Continuous Drain Ta=25C lo -6.1 Current* Ta=70C 5.1 A Pulsed Drain Current lou -60 Ta=25" 3 a a=25C P> W Power Dissipation* Ta=70C 2.1 Junction and Storage Temperature Range Tu, Tste -55 to 150 c Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient* t< 10s A 31 40 C/W Maximum Junction-to-Ambient* Steady-State me 59 75 C/W Maximum Junction-to-Lead Steady-State Rast 16 24 c/W FI ARK L.LIWN TECHNOLOGY 33P-Channel Enhancement Mode Power MOS FET ELM13401AA Electrical Characteristics (T:=25C unless otherwise noted) Symbol | Parameter | Conditions | Min | Typ | Max | Units STATIC PARAMETERS BVoss Drain-Source Breakdown Voltage lo=-250uA, Ves=0V -30 Vv Ipss Zero Gate Voltage Drain Current Vos=2 00s Vos=OM a LA | T=55'C 5 lass Gate-Body leakage current Vos=0V, Ves=+12V +100} nA Vesitn Gate Threshold Voltage Vos=Ves, lo=-250uA -0.7 -1 -1.3 Vv lovony On state drain current Ves=-4.5V, Vos=-5V A Vas=-10V, lo=-6.1A 38 46 mo Rosion) Static Drain-Source On-Resistance | Tat25%0 70 Voes=-4.5V, lo=-5A 49 61 mQ Ves=-2.5V, lp=-1A 76 117 | mQ Qrs Forward Transconductance Vos=-5V, ln=-5A 7 11 S Vso Diode Forward Voltage Is=-1A, Ves=OV 0.75) -1 Vv Is Maximum Body-Diode Continuous Current -4.2 A DYNAMIC PARAMETERS Ciss Input Capacitance 940 pF Coss Output Capacitance Ves=0V, Vos=-15V, f= iMHz 104 pF Coss Reverse Transfer Capacitance 73 pF Ro Gate resistance Ves=0V, Vos=0V, f=1MHz 6 Q SWITCHING PARAMETERS Qs Total Gate Charge 9.4 nc Qys Gate Source Charge Ves=-4.5V, Vos=-15V, Ilb=-5A 2 nc Qas Gate Drain Charge 3 nC foron) Tum-On Delay Time 76 ns t Turn-On Rise Time Ves=-10V, Vos=-15V, Ri=2.42, 8.6 ns tovon Turn-Off Delay Time Roen=6 2 44.7 ns tr Tum-Off Fall Time 16.5 ns ter Body Diode Reverse Recovery Time lr=-5A, di/dt=100A/us 22.7 ns Qn Body Diode Reverse Recovery Charge | Ir=-5A, di/dt=100A/s 15.9 nC A: The value of Raya is measured with the device mounted on 1in? FR-4 board with 20z. Copper, in a still air environment with Ta=25'c. The value in any a given application depends on the user's specific board design. The current rating is based on the t<10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C: The Roua is the sum of the thermal impedance from junction to lead Rey. and lead to ambient. D: The static characteristics in Figures 1 to 6, 12, 14 are obtained using 80s pulses, duty cycle 0.5% max. E: These tests are performed with the device mounted on 1 in? FR-4 board with 20z. Copper, in a still air environment with Ta=25'c. The SOA curve provides a single pulse rating. EI AA LLINN TECHNOLOGY 34P-Channel Enhancement Mode Power MOS FET ELM13401AA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1 0 i i Vps=-5V { 8 < < 2 = 4 i 4 125C 2 J 25C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 -Vps (Volts) -Ves(Volts) Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 120 1.6 : LY Ip=-5A i Ves=-4.5V LY. 100 a & Vec=-10V <8 L Ves=-2.5V S 1. es~10V NA ~ ~ 4 3 " CK a 2 5 " 12 oe wa g sc Ves=-2.5V zo Ver4sv - 3 Oo 1 40 5 z Ves=-10V 20 0.8 0.00 2.00 4.00 6.00 8.00 10.00 0 25 50 75 100 125 150 175 -lp (A) Temperature (C ) Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Gate Voltage Temperature 190 1.0E+01 ~ 170 1.0E+00 LY 150 / J 1.0E-01 Se 138 125C / 110 q@ 1.0E-02 & 90 ? VA @ 1.0E-03 mw 70 / / 25C 50 1.0E-04 ] / 30 1.0E-05 [ / 10 / / 0 2 4 6 8 10 1.0E-06 0.0 . : . . Ves (Volts) 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5: On-Resistance vs. Gate-Source Voltage Vso (Volts) Figure 6: Body-Diode Characteristics rei AA ree Lew Lt WN TECHNOLOGY 35P-Channel Enhancement Mode Power MOS FET ELM13401AA TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 7 1400 Vps=-15V Lo =. 1200 4 Ip=-5A r / / c 1000 2 3 f- = oO 8 800 & Yo 8 5 hea 600 * z c 400 1 200 0 0 0 2 4 6 8 10 12 0 5 10 15 20 2 30 Q;:(n) Vps (Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 Ta=25 10.0 Rosion) oy . limited a E = a 1.0 10 100 1000 0.1 1 40 400 0.001 0.01 0.1 1 Vos (Volts) Pulse Width (s) i : Si Rating J tion-to- Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction Ambient (Note E) Operating Area (Note E) 10 D=T on/(Tont Tort) In descending order Ty px=TatPom-Zoa-Rea D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Rea=40C/W = S aa Zesa Normalized Transient Thermal Resistance Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance