2SK3926-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR Ratings 250 220 34 136 30 34 665.7 9.5 dV DS /dt dV/dt -di/dt PD Tch Tstg VISO 20 5 100 95 2.16 +150 -55 to +150 2 Unit V V A A V A mJ Remarks Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Drain(D) VGS=-30V Note *1 Note *2 mJ Note *3 kV/s kV/s A/s W VDS< = 250V Note *4 Note *5 Tc=25C Ta=25C Gate(G) Source(S) Note *1:Tch < = 150C,Repetitive and Non-repetitive Note *2:StartingTch=25C,IAS=14A,L=5.71mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by C C kVrms t=60sec, f=60Hz Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Equivalent circuit schematic graph. < -ID, -di/dt=100A/s,VCC= < BVDSS,Tch= < 150C Note *4:IF = < -ID, dv/dt=5kV/s,VCC= < 150C < BVDSS,Tch= Note *5:IF= Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS =250V VGS=0V Tch=125C VDS =200V VGS=0V VGS=30V VDS=0V ID=17A VGS=10V ID=17A VDS=25V VDS =75V VGS=0V f=1MH VCC=48V ID=17A VGS=10V maximum channel temperature. See to the `Transient Thermal impedance' Min. Typ. 250 3.0 13 RGS=10 VCC =125V ID=34A VGS=10V IF=34A VGS=0V Tch=25C IF=34A VGS=0V -di/dt=100A/s Tch=25C Max. 5.0 25 2.0 100 110 85 26 1850 2800 220 330 21 32 20 30 19 29 56 85 19 29 56 85 20 30 19 29 1.00 1.50 140 250 0.5 1.25 Units V V A mA nA m S pF ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.316 58 Units C/W C/W 1 2SK3926-01MR FUJI POWER MOSFET Characteristics 120 Allowable Power Dissipation PD=f(Tc) 100 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 90 20V 10V 100 80 7.5V 70 80 ID [A] PD [W] 60 60 7V 50 40 40 6.5V 30 20 VGS=6V 20 10 0 0 0 25 50 75 100 125 0 150 2 4 6 Tc [C] 100 8 10 12 14 16 VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 gfs [S] ID[A] 10 1 1 0.1 0.1 0.1 0.01 0 1 2 3 4 5 6 7 8 9 10 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6.5V 0.18 7.0V 0.16 RDS(on) [ ] 0.30 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=17A,VGS=10V 0.25 7.5V 8V 0.20 10V 20V 0.14 0.12 RDS(on) [ ] 0.20 100 ID [A] max. 0.15 typ. 0.10 0.10 0.05 0.08 0.06 0.00 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3926-01MR 7 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 24 6 Typical Gate Charge Characteristics VGS=f(Qg):ID=34A,Tch=25C 20 Vcc= 50V max. 250V 16 4 VGS [V] VGS(th) [V] 5 min. 3 200V 12 8 2 4 1 0 0 -50 -25 0 25 50 75 100 125 0 150 20 40 60 Tch [C] 10n 80 100 120 140 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 10 C [F] IF [A] 1n Coss 1 100p Crss 10p -1 10 10 0 10 1 10 2 10 0.1 0.00 3 0.25 0.50 VDS [V] 10 3 0.75 1.00 1.25 1.50 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=34A 700 IAS=14A 600 tf 500 EAV [mJ] 2 t [ns] 10 td(off) td(on) 10 400 IAS=21A 300 1 IAS=34A 200 tr 100 10 0 10 0 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3926-01MR 10 2 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] Single Pulse 10 1 10 0 -1 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/ 4