TSM120N06LCP
Taiwan Semiconductor
1 Version: A1602
N-Channel Power MOSFET
60V, 70A, 12mΩ
FEATURES
● Low RDS(ON) to minimize conductive losses
● Logic level
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● Secondary Synchronous Rectification
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
60
V
RDS(on)
(max)
VGS = 10V
12
mΩ
VGS = 4.5V
15
Qg
18
nC
Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25°C
ID
70
A
TA = 25°C
10
Pulsed Drain Current (Note 1)
IDM
280
A
Single Pulse Avalanche Current (Note 2)
IAS
20
A
Single Pulse Avalanche Energy (Note 2)
EAS
60
mJ
Total Power Dissipation
TC = 25°C
PD
125
W
TC = 125°C
25
Total Power Dissipation
TA = 25°C
PD
2.6
W
TA = 125°C
0.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
1
°C/W
Junction to Ambient Thermal Resistance
RӨJA
49
°C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
TSM120N06LCP
Taiwan Semiconductor
2 Version: A1602
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS(TH)
1.2
1.7
2.5
V
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Drain-Source Leakage Current
VGS = 0V, VDS = 60V
IDSS
--
--
1
µA
VGS = 0V, VDS = 60V
TJ = 125°C
--
--
100
Drain-Source On-State Resistance
(Note 3)
VGS = 10V, ID = 10A
RDS(on)
--
9.7
12
mΩ
VGS = 4.5V, ID = 10A
--
11
15
Forward Transconductance(Note 3)
VDS = 5V, ID = 10A
gfs
--
40
--
S
Dynamic (Note 4)
Total Gate Charge
VGS = 10V, VDS = 30V,
ID = 10A
Qg
--
37
--
nC
Total Gate Charge
VGS = 4.5V, VDS = 30V,
ID = 10A
Qg
--
18
--
Gate-Source Charge
Qgs
--
6
--
Gate-Drain Charge
Qgd
--
7.5
--
Input Capacitance
VGS = 0V, VDS = 30V
f = 1.0MHz
Ciss
--
2118
--
pF
Output Capacitance
Coss
--
136
--
Reverse Transfer Capacitance
Crss
--
86
--
Gate Resistance
f = 1.0MHz, open drain
Rg
0.5
1.6
3.2
Ω
Switching (Note 4)
Turn-On Delay Time
VGS = 10V, VDS = 30V,
ID = 10A, RG = 2Ω,
td(on)
--
6.4
--
ns
Turn-On Rise Time
tr
--
13.4
--
Turn-Off Delay Time
td(off)
--
25.6
--
Turn-Off Fall Time
tf
--
6.6
--
Source-Drain Diode
Forward Voltage (Note 3)
VGS = 0V, IS = 10A
VSD
--
--
1
V
Reverse Recovery Time
IS = 10A ,
dI/dt = 100A/μs
trr
--
17
--
ns
Reverse Recovery Charge
Qrr
--
13
--
nC
Notes:
1. Current limited by package.
2. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 20A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM120N06LCP ROG
TO-252(DPAK)
2,500pcs / 13” Reel
TSM120N06LCP
Taiwan Semiconductor
3 Version: A1602
ID, Continuous Drain Current (A)
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
ID, Continuous Drain Current (A)
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
RDS(ON), Drain-Source On-Resistance (Ω)
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
Qg, Gate Charge (nC)
RDS(on), Drain-Source On-Resistance
(Normalized)
TJ, Junction Temperature (°C)
RDS(on), Drain-Source On-Resistance (Ω)
VGS, Gate to Source Voltage (V)
0
10
20
30
40
0 1 2 3 4
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
VGS=4V
VGS=3.5V
VGS=3V
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
010 20 30 40
VGS=10V
VGS=4.5V
0
10
20
30
40
0 1 2 3 4
25
℃
-55
℃
150
℃
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-75 -50 -25 025 50 75 100 125 150
VGS=10V
ID=10A
0
2
4
6
8
10
010 20 30 40
VDS=30V
ID=10A
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
345678910
ID=10A
TSM120N06LCP
Taiwan Semiconductor
4 Version: A1602
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BVDSS vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
t, Square Wave Pulse Duration (sec)
C, Capacitance (pF)
VDS, Drain to Source Voltage (V)
BVDSS (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature (°C)
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
25℃
150℃ -55℃
0
500
1000
1500
2000
2500
3000
010 20 30 40 50 60
CISS
COSS
CRSS
0.8
0.9
1
1.1
1.2
-75 -50 -25 025 50 75 100 125 150
ID=1mA
1
10
100
1000
0 1 10 100
ID, Drain Current (A)
VDS, Drain to Source Voltage (V)
RDS(ON)
SINGLE PULSE
RӨJC=1°C/W
T
C
=25
°
C
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
SINGLE PULSE
RӨJC=1°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
IS, Reverse Drain Current (A)
VSD, Body Diode Forward Voltage (V)
TSM120N06LCP
Taiwan Semiconductor
5 Version: A1602
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252(DPAK)
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
120N06
YML
TSM120N06LCP
Taiwan Semiconductor
6 Version: A1602
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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