VUI72-16NOXT - Zilog - Product.Network

VUI72-16NOXT

3~ Rectifier Bridge + Brake Unit

Standard Rectifier Module

9~

6

7~

1~

5

42

NTC

11 12

10

Part number

VUI72-16NOXT

Backside: isolated

Features / Ad vantages: Applications: Package:

● Soldering connections for PCB mounting

● Convenient package outline

● NTC

● 3~ Rectifier with brake unit

for drive inverters

V1-A-Pack

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 17 mm

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

RRM

1600

I75

FSM

600

DAV

V=V

A

=

I

3~

Rectifier

CES

1200

Brake

Chopper

I58

CE(sat)

1.85

C25

V=V

A

V

=

V

IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified

VUI72-16NOXT

V = V

kA²s

Symbol Definition

Ratings

typ. max.

I

R

V

IA

V

F

1.10

R1.1 K/W

R

min.

75

V

RSM

V

40T = 25°C

VJ

T = °C

VJ

mA1.5V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

110

P

tot

110 WT = 25°C

C

RK/W0.3

25

1600

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions Unit

1.38

T = 25°C

VJ

150

V

F0

V0.79T = °C

VJ

150

r

F

7.7 mΩ

V1.01T = °C

VJ

I = A

F

V

25

1.37

I = A

F

75

I = A

F

75

threshold voltage

slope resistance for power loss calculation only

µA

125

V

RRM

V1600

max. re pe titive rev er se blockin g volt a ge T = 25°C

VJ

C

J

19

j

unction capacitance V = V;400 T = 25°Cf = 1 MHz

RVJ

pF

I

FSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T = °C

VJ

150

600

650

1.30

1.26

A

510

550

1.80

1.76

1600

DAV

d =rectangular ⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

1700

IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified

VUI72-16NOXT

T = 125°C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collector current A

58

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions Unit

40

V

CE(sat)

total power dissipation 195 W

collector emitter leakage current

6.5 V

turn-on delay time 70 ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient gate emitter voltage

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

105

±30

T = 125°C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current V = ±20 V

GE

2.15

5.95.4

mA

0.1 mA

0.1

500

G(on)

total gate charge V = V; V = 15 V; I = A

CE

Q

GE C

110 nC

t

E

d(on)

r

d(off)

f

on

off

40 ns

250 ns

100 ns

3.8 mJ

4.1 mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEK

1200

short circuit safe operating area

µs

SCSOA

10T = 125°C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

140 A

R

thJC

thermal resistance junction to case

0.25

K/W

V

RRM

V1200

max. repe titive rev erse volt a g e T = 25°C

VJ

T = 25°C

forward current A

0

A

C

tbd

T = °C

C

I

F25

I

F

T = 25°C

forward voltage V

tbd

V

VJ

tbdT = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current mA

tbd

mA

VJ

tbdT = 125°C

VJ

I

RR RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

tbd µC

tbd A

tbd ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

-di /dt = A/µs

I = A

F

R

thJC

thermal resistance junction to case tbd K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = 125°C

VJ

35

1.5

35

27

600

900

600

I

CM

1.85

R

thCH

thermal resistance case to heatsink

0.65

K/W

0R

thCH

thermal resistance case to heatsink K/W

Brake IGBT

Brake Diode

600 V

80

nA

IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified

VUI72-16NOXT

Ratings

Part Number (Typ)

yywwA

Date Code Location

Lot No.:

2D Data Matrix

Package

T

VJ

°C

M

D

Nm2.5

mounting torque 2

T

stg

°C125

storage temperature -40

Weight g37

Symbol Definition typ. max.min.Conditions

virt ua l j un ctio n temp eratu re

Unit

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

6.0

12.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current 100 A

per terminal

150-40

terminal to terminal

V

1-A-Pack

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

0 50 100 150

0

1000

2000

3000

4000

5000

6000

7000

R

[]

Typ. NTC resistance vs. temperature

T

C

[°C]

50/60 Hz, RMS; I ≤ 1 mA

ISOL

VUI72-16NOXT 510748Box 10VUI72-16NOXTStandard

3000

3600

ISOL

threshold voltage V0.79

mΩ

V

0 max

R

0 max

slope resistance * 6.5

1.1

40

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

Rectifier Brake

IGBT

150 °C

* on die level

T = 25°

resistance kΩ

2.27

K

VJ

3560

R

25

B

25/50

2.2

2.13

temperature coefficient

Symbol Definition typ. max.min.Conditions Unit

Temperature Sensor NTC

IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified

VUI72-16NOXT

38

1

2

4

5

7

9

10

6

7

14

50

35

5,5

23,5

25,75

51,5

26

5,5

31,6

15

63

13

17

0,5

38,6

2

4x45°

R

R2

R1

±0,3

±0,2

±0,1

±0,15

+0,2

0,5

R

0,25

±0,25

3,3 ±0,5

±0,3

7±0,3

14 ±0,3

11 ±0,3±0,3

11

8,3

Ø0,5

4,6

5

±1

15,8 ±1

±1

9~

6

7~

1~

5

42

NTC

11 12

10

Outlines V1-A-Pack

IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified

VUI72-16NOXT

011

400

800

1200

1600

2000

V

F

[V]

I

F

[A]

0.4 0.6 0.8 1.0 1.2 1.4 1.6

0

20

40

60

80

100

10-3 10-2 10-1 100

200

300

400

500

1 10 100 1000 10000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0 25 50 75 100 125 150 1750 4 8 121620242832

0

8

16

24

32

0 25 50 75 100 125 150

0

20

40

60

80

100

I

FSM

[A]

t[s] t [ms]

I

2

t

[A

2

s]

P

tot

[W]

I

dAVM

[A] T

A

[°C]

I

F(AV)M

[A]

T

C

[°C]

Z

thJC

[K/W]

t[ms]

Constants for Z

thJC

calculation:

iR

th

(K/W) t

i

(s)

1 0.0607 0.0004

2 0.1230 0.00256

3 0.2305 0.0045

4 0.4230 0.0242

5 0.2628 0.1800

0.8 x V

RRM

50 Hz

T

VJ

=45°C

VR =0 V

R

thJA

:

0.6 KW

0.8 KW

1KW

2KW

4KW

8KW

DC =

1

0.5

0.4

0.33

0.17

0.08

T

VJ

=

125°C

150°C

T

VJ

=25°C

T

VJ

=150°C T

VJ

=150°C

Fig. 1 Forward current vs.

voltage drop per diode

Fig. 2 Surge overload current

vs. time per diode

Fig. 3 I

2

tvs.timeperdiode

Fig. 4 Power dissipation vs. forward current

and ambient temperature per diode

Fig. 5 Max. forward current vs.

case temperature per diode

Fi

g

. 6 Transient thermal im

p

edance

j

unction to case vs. time

p

er diode

DC =

1

0.5

0.4

0.33

0.17

0.08

T

VJ

=45°C

Rectifier

IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified

VUI72-16NOXT

0123

0

10

20

30

40

50

60

70

020406080

0

2

4

6

8

10

012345

0

10

20

30

40

50

60

70

V

CE

[V]

Q

G

[nC]

V

GE

[V]

9V

11 V

5 6 7 8 9 10111213

0

10

20

30

40

50

60

70

0 20406080100120140

0

5

10

15

20

13 V

20 40 60 80

3

4

5

6

E

[mJ]

E

on

Fig. 1 Typ. output characteristics

V

CE

[V]

I

C

[A]

VGE =15V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. tranfer characteristics

V

GE

[V]

Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy

versus collector current

E

off

Fig. 6 Typ. switching energy

versus gate resistance

R

G

[]

E

[mJ]

I

C

[A]

E

on

E

off

T

VJ

=125°C

T

VJ

= 25°C

VGE =15V

T

VJ

= 125°C

T

VJ

= 125°C

T

VJ

=25°C

I

C

=35A

V

CE

=600V

R

G

= 27

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

I

C

=35A

V

CE

=600 V

V

GE

= ±15 V

T

VJ

= 125°C

0.0001 0.001 0.01 0.1 1 10

0.001

0.01

0.1

1

[s]

[K/W]

Fi

g

.7 T

y

p

.transientthermalim

p

edance

Brake IGBT

IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified