
Excelics EFA018A-70
DATA SHEET
Low Distortion GaAs Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +18.5dBm TYPICAL OUTPUT POWER
• 10.5dB TYPICAL POWER GAIN AT 12GHz
• TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED
GAIN AT 12GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P1dB Output Power at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz 16.5 18.5
18.5 dBm
G1dB Gain at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz 9.0 10.5
8.0 dB
PAE Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss f=12GHz
33 %
NF Noise Figure f=12GHz
Vds=2V, Ids=15mA 1.1 dB
Ga Associated Gain f=12GHz
Vds=2V, Ids=15mA 10.5 dB
Idss Saturated Drain Current Vds=3V, Vgs=0V 25 50 80 mA
Gm Transconductance Vds=3V, Vgs=0V 20 30 mS
Vp Pinch-off Voltage Vds=3V, Ids=1.0 mA -2.0 -3.5 V
BVgd Drain Breakdown Voltage Igd=0.5mA -10 -15 V
BVgs Source Breakdown Voltage Igs=0.5mA -6 -14 V
Rth Thermal Resistance 480* oC/W
* Overall Rt h depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds Drain-Source Voltage 10V 6V
Vgs Gate-Source Voltage -6V -4V
Ids Dra i n Current Idss 40mA
Igsf Forward Gate Current 4mA 0.7mA
Pin Input Power 17dBm @ 3dB Compression
Tch Channel Temperature 175oC 150 oC
Tstg Storage Temperature -65/175oC -65/150 oC
Pt Total Power Dissipation 285mW 240mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
All Dimensions In mils.
SS
D
G
(All Leads)
40
20
44
19
4
70
180 Min.