SBE809
No.7293-1/3
Applications
General rectification.
High frequency rectification (switching regulators, converters, and choppers).
Features
Low forward voltage (VF max=0.55V).
Fast reverse recovery time (trr max=10ns).
Composite type with 2 diodes contained in the CPH package currently in use, improving the mounting efficiency
greatly.
The chips incorporated are both equivalent to the SB007-03CP.
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V
Average Output Current IO70 mA
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 2 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Electrical Characteristics at Ta=25°C (Value per element)
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=20µA30V
Forward Voltage VFIF=70mA 0.55 V
Reverse Current IRVR=15V 5.0 µA
Interterminal Capacitance C VR=10V, f=1MHz 3.0 pF
Reverse Recovery Time trr IF=IR=10mA, See specified Test Circuit. 10 ns
Thermal Resistance Rth(j-a) 300 °C / W
Marking : SH
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN7293A
72506 MS IM TC-00000068 / O1002 TS IM TA-3615
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
SBE809 Schottky Barrier Diode
30V, 70mA Rectifier
SBE809
No.7293-2/3
Package Dimensions Electrical Connection
unit : mm (typ)
7017A-001
trr Test Circuit
5 101520253035
2
5
2
5
2
5
2
5
1000
100
10
1.0
2
5
0.1
0.01 0
ITR10742
IR -- VR
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
ITR10741
IF -- VF
Ta=
125
°
C
100
°
C
25
°
C
50
°
C
75
°
C
3
7
5
2
2
2
1.0
10
3
7
5
100
3
7
5
Ta=125
°
C
25
°
C
75
°
C
--25
°
C
70.01 23 7
0.1
05237
1.0
523
2.4
2.8
1.6
0.8
2.0
1.2
0.4
ITR10744
IFSM -- t
I
S
20ms
t
5
1.0
3
7
7
5
3
2
10
2
C -- VR
ITR10743
1.0 10
23 5757 2 3 5
f=1MHz
Forward Voltage, VF -- V
Forward Current, IF -- mA
Rev erse Voltage, VR -- V
Reverse Current, IR --
µ
A
Rev erse Voltage, VR -- V
Interterminal Capacitance, C -- pF
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
Duty10%
5010010
5V trr
10µs
10mA10mA
1.0mA
12
534
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
Top view
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
SANYO : CPH5
21
453
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
0.95
SBE809
No.7293-3/3
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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PS
This catalog provides information as of July, 2006. Specifications and information herein are subject
to change without notice.