SBE809 Ordering number : EN7293A SANYO Semiconductors DATA SHEET SBE809 Schottky Barrier Diode 30V, 70mA Rectifier Applications * * General rectification. High frequency rectification (switching regulators, converters, and choppers). Features * * * * Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=10ns). Composite type with 2 diodes contained in the CPH package currently in use, improving the mounting efficiency greatly. The chips incorporated are both equivalent to the SB007-03CP. Specifications Absolute Maximum Ratings at Ta=25C (Value per element) Parameter Repetitive Peak Reverse Voltage Symbol Conditions Ratings Unit VRRM VRSM 30 35 V Average Output Current IO 70 mA Surge Forward Current IFSM Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle V 2 A Junction Temperature Tj --55 to +125 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at Ta=25C (Value per element) Parameter Symbol Reverse Voltage VR Forward Voltage VF Reverse Current IR Interterminal Capacitance Reverse Recovery Time Thermal Resistance C trr Rth(j-a) Conditions IR=20A IF=70mA Ratings min typ Unit max 30 VR=15V VR=10V, f=1MHz V 0.55 V 5.0 A 3.0 IF=IR=10mA, See specified Test Circuit. pF 10 300 ns C / W Marking : SH Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72506 MS IM TC-00000068 / O1002 TS IM TA-3615 No.7293-1/3 SBE809 Package Dimensions Electrical Connection unit : mm (typ) 7017A-001 5 0.6 1.6 2.8 1 : Cathode 2 : Cathode 3 : Anode 4 : No Contact 5 : Anode 3 0.2 4 1 0.05 1 0.6 3 0.15 2.9 5 4 2 0.95 2 Top view 1 : Cathode 2 : Cathode 3 : Anode 4 : No Contact 5 : Anode 0.9 0.2 0.4 SANYO : CPH5 trr Test Circuit 100 10 10mA 50 10s 1.0mA 10mA Duty10% 5V trr IF -- VF 2 IR -- VR 1000 Reverse Current, IR -- A C --25 C 25 25 75 10 7 5 C C 3 2 Ta= 1 Forward Current, IF -- mA 5 100 7 5 3 2 1.0 7 5 5 100C 2 10 5 75C 2 1.0 50C 5 25C 2 0.1 5 2 0.01 3 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage, VF -- V 0.7 5 10 15 Surge Forward Current, IFSM(Peak) -- A 10 7 5 3 2 1.0 7 5 20 25 30 Reverse Voltage, VR -- V 35 ITR10742 IFSM -- t 2.8 f=1MHz 3 5 0 ITR10741 C -- VR 2 Interterminal Capacitance, C -- pF Ta=125C 2 100 Current waveform 50Hz sine wave 2.4 IS 20ms t 2.0 1.6 1.2 0.8 0.4 0 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 ITR10743 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ITR10744 No.7293-2/3 SBE809 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No.7293-3/3