RT8059
®
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©
1
Features
zz
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zWide Input Voltage from 2.8V to 5.5V
zz
zz
zAdjustable Output from 0.6V to VIN
zz
zz
z1A Output Current
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z95% Efficiency
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zz
zNo Schottky Diode Required
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z1.5MHz Fixed Frequency PWM Operation
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zSmall TSOT-23-5 Package
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zRoHS Compliant and Halogen Free
Applications
zNIC Card
zCellular Telephones
zPersonal Information Appliances
zWireless and DSL Modems
zMP3 Players
zPortable Instruments
1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter
General Description
The RT8059 is a high efficiency Pulse Width Modulated
(PWM) step-down DC/DC converter, capable of delivering
1A output current over a wide input voltage range from
2.8V to 5.5V. The RT8059 is ideally suited for portable
electronic devices that are powered by 1-cell Li-ion battery
or by other power sources within the range, such as cellular
phones, PDAs and handy-terminals.
Internal synchronous rectifier with low RDS(ON) dramatically
reduces conduction loss at PWM mode. No external
Schottky diode is required in practical applications. The
RT8059 automatically turns off the synchronous rectifier
when the inductor current is low and enters discontinuous
PWM mode. This can increase efficiency in light load
condition.
The RT8059 enters low dropout mode when normal PWM
cannot provide regulated output voltage by continuously
turning on the upper P-MOSFET. The RT8059 enters
shutdown mode and consumes less than 0.1μA when the
EN pin is pulled low.
The switching ripple can be easily smoothed out by small
package filtering elements due to a fixed operation
frequency of 1.5MHz. This along with small TSOT-23-5
package provides small PCB area application. Other
features include soft-start, lower internal reference voltage
with 2% accuracy, over temperature protection, and over
current protection.
Ordering Information
Pin Configurations
(TOP VIEW)
TSOT-23-5
Note :
Richtek products are :
` RoHS compliant and compatible with the current
require-
ments of IPC/JEDEC J-STD-020.
` Suitable for use in SnPb or Pb-free soldering
processes.
EN GND LX
FB VIN
4
23
5
BQ= : Product Code
DNN : Date Code
Marking Information
BQ=DNN
RT8059
Package Type
J5 : TSOT-23-5
Lead Plating System
G : Green (Halogen Free and Pb Free)
RT8059
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Typical Application Circuit
+= R2
R1
1 x VV REFOUT
with R2 = 60kΩ to 300kΩ , IR2 = 2μA to 10μA,
and (R1 x C1) should be in the range between 3x106 and 6x106 for component selection.
Functional Pin Description
Pin No. Pin Name Pin Function
1 EN Chip Enable (Active High). Do not leave the EN pin floating.
2 GND Ground.
3 LX Switch Node.
4 VIN Power Input.
5 FB Feedback Input Pin.
Function Block Diagram
4.7µF
10µF
VIN LX
GND
RT8059
EN FB
2.2µH
2.8V to 5.5V
VIN VOUT
CIN
L
5
3
4
1
2
COUT
R1
R2
C1
IR2
COMP
RC
RS1
RS2
EN VIN
LX
FB
UVLO
VREF
Slope
Compensation
Current
Sense
OSC &
Shutdown
Control
Zero
Detector
Current
Limit
Detector
Driver
Control
Logic
GND
Error
Amplifier
PWM
Comparator
RT8059
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Absolute Maximum Ratings (Note 1)
zVIN to GND -------------------------------------------------------------------------------------------------------- 6.5V
zLX Pin Switch Voltage ------------------------------------------------------------------------------------------ 0.3V to (PVDD + 0.3V)
< 30ns -------------------------------------------------------------------------------------------------------------- 5V to 7.5V
zEN, FB to GND --------------------------------------------------------------------------------------------------- VIN + 0.6V
zPower Dissipation, PD @ TA = 25°C
TSOT-23-5 --------------------------------------------------------------------------------------------------------- 0.392W
zPackage Thermal Resistance (Note 2)
TSOT-23-5, θJA --------------------------------------------------------------------------------------------------- 255°C/W
zJunction Temperature Range ---------------------------------------------------------------------------------- 150°C
zLead Temperature (Soldering, 10 sec.) --------------------------------------------------------------------- 260°C
zStorage Temperature Range ----------------------------------------------------------------------------------- 65°C to 150°C
zESD Susceptibility (Note 3)
HBM (Human Body Mode) ------------------------------------------------------------------------------------- 2kV
MM (Machine Mode) -------------------------------------------------------------------------------------------- 200V
Electrical Characteristics
(VIN = 3.6V, VOUT = 2.5V, L = 2.2μH, CIN = 4.7μF, C OUT = 10μF, T A = 25°C, unless otherwise specified)
Recommended Operating Conditions (Note 4)
zSupply Input Voltage, VIN -------------------------------------------------------------------------------------- 2.8V to 5.5V
zJunction Temperature Range ---------------------------------------------------------------------------------- 40°C to 125°C
zAmbient Temperature Range ---------------------------------------------------------------------------------- 40°C to 85°C
Parameter Symbol Test Conditions Min Typ Max Unit
Quiescent Current IQ I
OUT = 0mA, VFB = VREF + 5% -- 78 -- μA
Shutdown Current ISH DN EN = GND -- 0.1 1 μA
Reference Voltage VREF 0.588 0.6 0.612 V
Adjustable Output Range VOUT (Note 5) VREF -- VIN 0.2 V
Adjustable Output Voltage
Accuracy ΔVOUT VIN = VOUT + ΔV to 5.5V,
0A < IOUT < 1A, (Note 6) 3 -- 3 %
FB Input Current IFB VFB = VIN 50 -- 50 nA
P-MOSFET RON R
DS(ON)_P
I
OUT = 200mA -- 0.28 --
N-MOSFET RON R
DS(ON)_N I
OUT = 200mA -- 0.25 -- Ω
P-Channel Current Limit ILM_P V
IN = 2.8V to 5.5V -- 1.5 -- A
Logic-High VIH V
IN = 2.8V to 5.5V 1.5 -- --
EN Input Threshold
Voltag e Logic-Low VIL V
IN = 2.8V to 5.5V -- -- 0.4 V
Under Voltage Lockout Threshold VUVLO -- 2.3 -- V
Under Voltage Lockout Hysteresis ΔVUVLO -- 0.2 -- V
Oscillator Frequency fOSC I
OUT = 100mA 1.2 1.5 1.8 MHz
Thermal Shutdown Temperature TSD -- 150 -- °C
Max. Duty Cycle DMAX 100 -- -- %
RT8059
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Note 1. Stresses beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a low effective thermal conductivity single-layer test board per JEDEC 51-3.
Note 3. Devices are ESD sensitive. Handling precaution recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. Guaranteed by design.
Note 6. ΔV = IOUT x RDS(ON)
RT8059
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Typical Operating Characteristics
Current Limit vs. Tem p erature
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
-50 -25 0 25 50 75 100 125
TemperatureC)
Current Limit (A)
VIN = 3.3V, VOUT = 1.2V
Reference Voltage vs. Temperature
0.580
0.585
0.590
0.595
0.600
0.605
0.610
0.615
0.620
-50 -25 0 25 50 75 100 125
Temperature (°C)
Reference Voltage (V)
VIN = 3.3V, IOUT = 0.1A
Frequency vs. Temperature
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
-50-250 255075100125
Temperature (°C)
Frequency (MHz) 1
VIN = 3.3V, VOUT = 1.2V,
IOUT = 0.3A
Reference Voltage vs. Input Voltage
0.580
0.585
0.590
0.595
0.600
0.605
0.610
0.615
0.620
2.5 3 3.5 4 4.5 5 5.5
Input Voltage (V)
Reference Voltage (V)
IOUT = 0.1A
Output Voltage vs. Output Current
1.180
1.185
1.190
1.195
1.200
1.205
1.210
1.215
1.220
1.225
1.230
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Output Current (A)
Output Voltage (V)
VIN = 3.3V
0
10
20
30
40
50
60
70
80
90
100
0.01 0.1 1
Load Current (A)
Efficiency (%)
Efficiency vs. Load Current
VIN = 3.3V, VOUT = 2.5V
VIN = 5.5V, VOUT = 2.5V
VIN = 3.3V, VOUT = 1.2V
VIN = 5.5V, VOUT = 1.2V
RT8059
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Load Transient Response
Time (100μs/Div)
VIN = 3.3V, VOUT = 1.2V,
IOUT = 0.5A to 1A
VOUT
(50mV/Div)
IOUT
(500mA/Div)
Load Transient Response
Time (100μs/Div)
VOUT
(50mV/Div)
IOUT
(500mA/Div)
VIN = 3.3V, VOUT = 1.2V,
IOUT = 0.1A to 1A
Switching
Time (250ns/Div)
IOUT
(1A/Div)
VLX
(2V/Div)
VOUT
(5mV/Div)
VIN = 3.3V, VOUT = 1.2V,
IOUT = 1A
Power On from EN
Time (500μs/Div)
IOUT
(1A/Div)
VEN
(2V/Div)
VOUT
(500mV/Div)
VIN = 3.3V,
VOUT = 1.2V,
IOUT = 1A
Power Off from EN
Time (500μs/Div)
VIN = 3.3V,
VOUT = 1.2V,
IOUT = 1A
IOUT
(1A/Div)
VEN
(2V/Div)
VOUT
(500mV/Div)
Switching
Time (250ns/Div)
VIN = 3.3V, VOUT = 1.2V,
IOUT = 0.5A
IOUT
(1A/Div)
VLX
(2V/Div)
VOUT
(5mV/Div)
RT8059
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Applications Information
The basic RT8059 application circuit is shown in Typical
Application Circuit. External component selection is
determined by the maximum load current and begins with
the selection of the inductor value and operating frequency
followed by CIN and COUT.
Inductor Selection
For a given input and output voltage, the inductor value
and operating frequency determine the ripple current. The
ripple current ΔIL increases with higher VIN and decreases
with higher inductance.
Having a lower ripple current reduces the ESR losses in
the output capacitors and the output voltage ripple. Highest
efficiency operation is achieved at low frequency with small
ripple current. This, however, requires a large inductor.
A reasonable starting point for selecting the ripple current
is ΔIL = 0.4(IMAX). The largest ripple current occurs at the
highest VIN. To guarantee that the ripple current stays
below a specified maximum, the inductor value should be
chosen according to the following equation :
Inductor Core Selection
Once the value for L is known, the type of inductor can be
selected. High efficiency converters generally cannot afford
the core loss found in low cost powdered iron cores, forcing
the use of more expensive ferrite or mollypermalloy cores.
Actual core loss is independent of core size for a fixed
inductor value but it is very dependent on the inductance
selected. As the inductance increases, core losses
decrease. Unfortunately, increased inductance requires
more turns of wire and therefore, results in higher copper
losses.
Ferrite designs have very low core losses and are preferred
at high switching frequencies, so design goals can
concentrate on copper loss and preventing saturation.
Ferrite core material saturates hard, which means
that inductance collapses abruptly when the peak design
×
×
=
IN
OUTOUT
LV
V
1
Lf
V
ΔI
×
Δ×
=
IN(MAX)
OUT
L(MAX)
OUT
V
V
1
If
V
L
current is exceeded. This results in an abrupt increase in
inductor ripple current and consequent output voltage ripple.
Do not allow the core to saturate!
Different core materials and shapes will change the size/
current and price/current relationship of an inductor.
Toroid or shielded pot cores in ferrite or permalloy materials
are small and don't radiate energy but generally cost more
than powdered iron core inductors with similar
characteristics. The choice of which style inductor to use
mainly depends on the price vs size requirements and
any radiated field/EMI requirements.
CIN and COUT Selection
The input capacitance, CIN, is needed to filter the
trapezoidal current at the source of the top MOSFET. To
prevent large ripple voltage, a low ESR input capacitor
sized for the maximum RMS current should be used. RMS
current is given by :
+
OUT
LOUT 8fC
1
ESR ΔIΔV
1
V
V
V
V
II
OUT
IN
IN
OUT
OUT(MAX)RMS =
This formula has a maximum at VIN = 2VOUT, where
IRMS = IOUT/2. This simple worst-case condition is
commonly used for design because even significant
deviations do not result in much difference. Note that ripple
current ratings from capacitor manufacturers are often
based on only 2000 hours of life which makes it advisable
to further derate the capacitor, or choose a capacitor rated
at a higher temperature than required. Several capacitors
may also be paralleled to meet size or height requirements
in the design.
The selection of COUT is determined by the effective series
resistance (ESR) that is required to minimize voltage ripple
and load step transients, as well as the amount of bulk
capacitance that is necessary to ensure that the control
loop is stable. Loop stability can be checked by viewing
the load transient response as described in a later section.
The output ripple, ΔVOUT, is determined by :
where f is the switching frequency and ΔIL is the inductor
ripple current.
RT8059
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The output ripple is highest at maximum input voltage
since ΔIL increases with input voltage. Multiple capacitors
placed in parallel may be needed to meet the ESR and
RMS current handling requirements. Dry tantalum, special
polymer, aluminum electrolytic and ceramic capacitors are
all available in surface mount packages. Special polymer
capacitors offer very low ESR but have lower capacitance
density than other types. Tantalum capacitors have the
highest capacitance density but it is important to only
use types that have been surge tested for use in switching
power supplies. Aluminum electrolytic capacitors have
significantly higher ESR but can be used in cost-sensitive
applications provided that consideration is given to ripple
current ratings and long term reliability. Ceramic capacitors
have excellent low ESR characteristics but can have a
high voltage coefficient and audible piezoelectric effects.
The high Q of ceramic capacitors with trace inductance
can also lead to significant ringing.
Using Cera mic Input a nd Output Ca pa citors
Higher values, lower cost ceramic capacitors are now
becoming available in smaller case sizes. Their high ripple
current, high voltage rating and low ESR make them ideal
for switching regulator applications. However, care must
be taken when these capacitors are used at the input and
output. When a ceramic capacitor is used at the input
and the power is supplied by a wall adapter through long
wires, a load step at the output can induce ringing at the
input, VIN. At best, this ringing can couple to the output
and be mistaken as loop instability. At worst, a sudden
inrush of current through the long wires can potentially
cause a voltage spike at VIN large enough to damage the
part.
Output Voltage Setting
The resistive voltage divider allows the FB pin to sense a
fraction of the output voltage as shown in Figure 1.
RT8059
GND
FB
R1
R2
VOUT
Figure 1. Setting Output Voltage
)
R2
R1
(1VV REFOUT +=
For adjustable voltage mode, the output voltage is set by
an external resistive voltage divider according to the
following equation :
where VREF is the internal reference voltage (0.6V typ.)
Checking T ransient Re sponse
The regulator loop response can be checked by looking
at the load transient response. Switching regulators take
several cycles to respond to a step in load current. When
a load step occurs, VOUT immediately shifts by an amount
equal to ΔILOAD (ESR), where ESR is the effective series
resistance of COUT. ΔILOAD also begins to charge or
discharge COUT generating a feedback error signal used
by the regulator to return VOUT to its steady-state value.
During this recovery time, VOUT can be monitored for
overshoot or ringing which would indicate a stability
problem.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
For recommended operating condition specifications of
the RT8059, the maximum junction temperature is 125°C
and TA is the ambient temperature. The junction to ambient
thermal resistance, θJA, is layout dependent. For TSOT-
23-5 packages, the thermal resistance, θJA, is 255°C/W
on a standard JEDEC 51-3 single-layer thermal test board.
The maximum power dissipation at TA = 25°C can be
calculated by the following formula :
PD(MAX) = (125°C 25°C) / (255°C/W) = 0.392W for
TSOT-23-5 package
RT8059
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Figure 2. Derating Curves for RT8059 Package
The maximum power dissipation depends on the operating
ambient temperature for fixed TJ(MAX) and thermal
resistance, θJA. For the RT8059 package, the derating
curves in Figure 2 allow the designer to see the effect of
rising ambient temperature on the maximum power
dissipation.
Layout Considerations
Follow the PCB layout guidelines for optimal performance
of the RT8059.
` Keep the trace of the main current paths as short and
wide as possible.
` Place the input capacitor as close as possible to the
device pins (VIN and GND).
` LX node experiences high frequency voltage swings
and should be kept in a small area. Keep analog
components away from the LX node to prevent stray
capacitive noise pick-up.
` Place the feedback components as close as possible to
the FB pin.
` GND and Exposed Pad must be connected to a strong
ground plane for heat sinking and noise protection.
EN
GND
LX
FB
2
3
5
4
1
VIN
GND
VIN VOUT
COUT
CIN
GND
C1
R1 R2
L
VOUT
Figure 3. PCB Layout Guide
0.00
0.03
0.06
0.09
0.12
0.15
0.18
0.21
0.24
0.27
0.30
0.33
0.36
0.39
0.42
0255075100125
Ambient Temperature (°C)
Maximum Power Dissipation (W) 1
Single-Layer PCB
RT8059
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Richtek Technology Corporation
5F, No. 20, Taiyuen Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
TSOT-23-5 Surface Mount Pack age
Dime nsions In Mi ll imete rs Dim en sions In I nches
Symbol Min Max Min Max
A 0.700 1.000 0.028 0.039
A1 0.000 0.100 0.000 0.004
B 1.397 1.803 0.055 0.071
b 0.300 0.559 0.012 0.022
C 2.591 3.000 0.102 0.118
D 2.692 3.099 0.106 0.122
e 0.838 1.041 0.033 0.041
H 0.080 0.254 0.003 0.010
L 0.300 0.610 0.012 0.024
AA1
e
b
B
D
C
H
L
Outline Dimension