CUS08F30 Schottky Barrier Diode Silicon Epitaxial CUS08F30 1. Applications * High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit 1: Cathode 2: Anode USC ) 25 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 Characteristics Reverse voltage Average rectified current Non-repetitive peak forward surge current Symbol Note Rating Unit VR 30 V IO (Note 1) 800 mA IFSM (Note 2) 5 A Junction temperature Tj 125 Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic circuit board of 25 mm x 25 mm, Pad dimension of 2 mm x 2 mm. Note 2: Measured with a 10 ms pulse. Start of commercial production 1 2010-12 2014-04-14 Rev.5.0 CUS08F30 ) 5. Electrical Characteristics (Unless otherwise specified, Ta = 25 25 Characteristics Forward voltage Reverse current Total capacitance Symbol Note VF(1) Test Condition Min Typ. Max Unit V IF = 10 mA 0.22 VF(2) IF = 100 mA 0.28 VF(3) IF = 800 mA 0.40 0.45 IR(1) VR = 30 V 50 A VR = 0 V, f = 1 MHz 170 pF Ct 6. Marking Fig. 6.1 Marking Marking Code Part Number HQ CUS08F30 7. Usage Considerations * Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. Land Pattern Dimensions for Reference Only Fig. 8.1 Land Pattern Dimensions for Reference Only (Unit: mm) 2 2014-04-14 Rev.5.0 CUS08F30 9. Characteristics Curves (Note) Fig. 9.1 IF - VF Fig. 9.2 IR - VR Fig. 9.3 Ct - VR Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 3 2014-04-14 Rev.5.0 CUS08F30 Package Dimensions Unit: mm Weight: 4.5 mg (typ.) Package Name(s) Nickname: USC 4 2014-04-14 Rev.5.0 CUS08F30 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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