ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
4500
V
IF =
2x 650
A
Doc. No. 5SYA 1599-03 Apr 12
• Ultra low-loss, rugged SPT+ diode
• Smooth switching SPT+ diode for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Repetitive peak reverse
voltage VRRM 4500
V
DC forward current IF 650 A
Peak forward current IFRM tp = 1ms 1300
A
Total power dissipation Ptot Tc = 25 °C, per diode 3350
W
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 5300
A
Isolation voltage Visol 1 min, f = 50 Hz 7400
V
Junction temperature Tvj 125 °C
Junction operating temperature Tvj(op) -50 125 °C
Case temperature Tc -50 125 °C
Storage temperature Tstg -50 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
ABB HiPak
TM
DIODE Module
5SLD 0650J450300
5SLD 0650J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1599-02 Jan 09 page 2 of 5
Diode characteristic values 2)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 3.1
Forward voltage 3) VF IF = 650 A Tvj = 125 °C 3.4 V
Tvj = 25 °C 10
Continuous reverse current IR VR = 4500 V Tvj = 125 °C 16 32 mA
Tvj = 25 °C 830
Reverse recovery current Irr Tvj = 125 °C 930 A
Tvj = 25 °C 560
Recovered charge Qrr Tvj = 125 °C 930 µC
Tvj = 25 °C 1180
Reverse recovery time trr Tvj = 125 °C 1700
ns
Tvj = 25 °C 910
Reverse recovery energy Erec
VR = 2800 V,
IF = 650 A,
VGE = ±15 V,
di/dt = 4200 A/µs
Lσ = 150 nH
inductive load,
switch:
5SNA 0650J450300 Tvj = 125 °C 1610
mJ
Module stray inductance Lσ AC per diode 36 nH
TC = 25 °C 0.2
Resistance, terminal-chip RAA’+CC’ per diode TC = 125 °C 0.3 mΩ
2) Characteristic values according to IEC 60747 – 2
3) Forward voltage is given at chip level
Thermal properties 4)
Parameter Symbol Conditions min typ max
Unit
Diode thermal resistance
junction to case Rth(j-c)DIODE
0.030
K/W
Diode thermal resistance 5)
case to heatsink Rth(c-s)DIODE
diode per switch, λ grease = 1W/m x K 0.027
K/W
Mechanical properties 4)
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 130 x 140 x 48 mm
Term. to base:
40
Clearance distance in air da according to IEC 60664-1
and EN 50124-1 Term. to term:
26 mm
Term. to base:
64
Surface creepage distance ds according to IEC 60664-1
and EN 50124-1 Term. to term:
56 mm
Comparative tracking index CTI ≥ 600
Ms Base-heatsink, M6 screws 4 6
Mounting torques 5) Mt1 Main terminals, M8 screws 8 10 Nm
Mass m 1150
g
4) Thermal and mechanical properties according to IEC 60747 – 15
5) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
5SLD 0650J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1599-03 Apr 12 page 3 of 5
Electrical configuration
A
C
A
C
Outline drawing 5)
Note: all dimensions are shown in mm
5) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for industrial level.
5SLD 0650J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1599-02 Jan 09 page 4 of 5
0
500
1000
1500
2000
0325 650 975 1300 1625
IF [A]
Erec [mJ], Irr [A], Qrr [µC]
Irr
Qrr
Erec
VCC = 2800 V
VGE = ±15 V
RG = 2.2 ohm
CGE = 150 nF
Tvj = 125 °C
Lσ = 150 nH
E
rec
[mJ] = -1.01 x 10
-3
x I
F2
+ 2.74 x I
F
+ 286
0
500
1000
1500
2000
0 1 2 3 4 5
di/dt [kA/µs]
Erec [mJ],Irr [A], Qrr [µC]
VCC = 2800 V
IF = 650 A
CGE = 150 nF
Tvj = 125 °C
Lσ = 150 nH
Erec
Qrr
Irr
R
G
= 4.7 ohm
R
G
= 6.8 ohm
R
G
= 3.3 ohm
R
G
= 2.2 ohm
R
G
= 10 ohm
Fig. 1 Typical reverse recovery characteristics
vs forward current Fig. 2 Typical reverse recovery characteristics
vs di/dt
0
325
650
975
1300
0 1 2 3 4 5
VF [V]
IF [A]
125 °C
25 °C
0
500
1000
1500
0 1000 2000 3000 4000 5000
VR [V]
IR [A]
VCC ≤ 3600 V
di/dt ≤ 4 kA/µs
Tvj = 125 °C
Fig. 3 Typical diode forward characteristics,
chip level Fig. 4 Safe operating area diode (SOA)
5SLD 0650J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1599-03 Apr 12
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth ∑
=
i
τ
i 1 2 3 4 5
Ri(K/kW) 20 7.01 3.46
DIODE
τi(ms) 191.5 22.6 3.1
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Zth(j-c) [K/W] IG BT , DIO DE
Zth(j-c) Diode
Fig. 5 Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043 Load – cycle capability of HiPaks
• 5SYA 2045 Thermal runaway during blocking
• 5SYA 2058 Surge currents for IGBT diodes
• 5SYA 2093 Thermal design of IGBT Modules
• 5SZK 9120 Specification of environmental class for HiPak
