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XBS104S13R-G
Schottky Barrier Diode, 1A, 40V Type
PACKAGING INFORM
A
TION
Ta=25
PRODUCT NAME DEVICE ORIENTATION
XBS104S13R-G SOD-323A (Halogen & Antimony free)
XBS104S13R SOD-323A
Ta=25
LIMITS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 I
F=100mA - 0.34 - V
Forward Voltage VF2 I
F=1A - 0.49 0.54 V
Reverse Current IR V
R=40V - 4 200
μA
Inter-Terminal Capacity Ct VR=10V , f=1MHz - 35 - pF
Reverse Recovery Ti me *2 trr
IF=IR=10mA , irr=1mA , RL=100Ω - 25 - ns
*2trr measurement circuit
PARAMETER SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 40 V
Forward Current (Average) IF(AV) 1 A
Non Continuous
Forward Surge Current *1 IFSM 10 A
Junction Temperature Tj 125
S torage Temperature Range Tstg -55+150
*1Non continuous high amplitude 60Hz half-sine wave.
: 1 (Product Number)
: Assembly Lot Number
Forward Voltage
: V
F
=0.49V (TYP.)
Forward Current
: I
F(AV)
=1A
Repetitive Peak Reverse Voltage : V
RM
=40V
Environmentally Friendly : EU RoHS Compliant, Pb Free
A
BSOLUTE MAXIMUM RATINGS
APPLICATIONS
Rectification
Protection against reverse connection of battery
MARKING RULE
ELECTRICAL CHARACTERISTICS
PRODUCT NAME
FEATURES
A
被測定イオード
オシロスコーパルス発生器
バイアス
IF
IR
trr
t
irr
0
ETR1608-003
Bias
Pulse Generatri
x
Oscilloscope
Device Under Test
Cathode Bar
SOD-323A
Unit : mm
* The “-G” suffix indicates that the products are Halogen and A nt i mony free as well as being full y RoHS compl i ant.
* The device orientation is fixed in i ts embossed tape pocket.
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XBS104S13R-G
(1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage
0.001
0.01
0.1
1
0 0.2 0.4 0.6
Forward Voltage VF (V)
Forward Current IF (A)
Ta=125℃
-20℃
25℃75℃
0.1
1
10
100
1000
10000
0 10203040
Reverse Voltage VR (V)
Reverse Current IR (uA)
Ta=125℃
25℃
75℃
(3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature
0.0
0.2
0.4
0.6
-50 0 50 100 150
Operating Temperature Ta ()
Forward Voltage V
F
(V)
IF=1A
0.5A
0.1A
0.01
A
0.1
1
10
100
1000
10000
0 50 100 150
Operating Temperature Ta ()
Reverse Current I
R
(uA)
VR=40V 20V
5V
(5) Inter-Terminal Capacity vs. Reve rse Voltage (6) Average Forward Current vs. Operating Temperature
0
50
100
150
200
0 10203040
Reverse Voltage V
R
(V)
Inter-Terminal Capacity Ct (pF)
Ta=25℃
0.0
0.5
1.0
1.5
2.0
0 50 100 150
Operating Temperature Ta ()
Average Forward Current IF
AV
(A)
TYPICAL PERFORMANCE CHARACTERISTICS
Forward Current: IF (A)
Reverse Current: IR (μA) Reverse Current: IR (μA)
Forward Voltage: VF (V)
Inter-Terminal Capacity: Ct (pF)
Average Forward Current: IFAV (A)
Forward Voltage: VF (V) Reverse Voltage: VR (V)
Operating Temperature: Ta () Operating Temperature: Ta ()
Operating Temperature: Ta () Reverse Voltage: VR (V)
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XBS104S13R-G
1. The products and prod uct specifications cont ained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights ari sin g from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing product s liste d in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our re presentatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.