Three Phase Rectifier Bridges PSD 51 IdAVM VRRM = 85 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 51/08 PSD 51/12 PSD 51/14 PSD 51/16 PSD 51/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM TC = 100C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 85 750 820 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 700 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2820 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2200 2250 A2 s A2 s -40 ... + 150 150 -40 ... + 125 C C C 2500 3000 V V 5 100 Nm g i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1 min t=1s Mounting torque typ. (M5) Features * Package with fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM 0.5 10 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM 1.6 0.8 6 V V m per diode; DC current per module 1.3 0.22 K/W K/W RthJK per diode; DC current per module 1.6 0.27 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 16.1 7.5 50 mm mm m/s2 TVJ = 25C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/ PSD 51 IF(OV) -----IFSM 200 [A] IFSM (A) TVJ=45C TVJ=150C 1.6 150 4 10 2 As 750 675 TVJ=45C 1.4 1.2 100 10 3 TVJ=150C 1 0 VRRM 0.8 50 1/2 VRRM Tvj = 150C IF 0.6 Tvj = 25C 1 VRRM 10 0.4 0 0.5 1 1.5 VF [V] 0 2 Fig. 1 Forward current versus voltage drop per diode 300 [W] 1 10 10 2 2 1 2 3 t[ms] 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 85 TC PSD 51 0.2 0.12 250 90 = RTHCA [K/W] 95 0.28 100 100 DC sin.180 rec.120 rec.60 [A] 80 105 200 0.45 110 115 150 100 DC sin.180 rec.120 rec.60 rec.30 50 PVTOT 0 125 60 40 130 1.78 135 20 140 IdAV 145 0 C 150 40 rec.30 60 120 0.78 20 IFAVM 6 80 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature K/W 2 Z thJK Z thJC 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/