PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 1
October 2008
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from process 10.
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
* Pulse Test: P ulse Width≤300μs, Duty Cycle≤2%
Thermal Characteristics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6 ” × 1.6” × 0.06."
Symbol Parameter Ratings Units
VCEO Collector-Emitter Voltage 45
VCBO Collector-Base Voltage 75
VEBO Emitter-Base Voltage 6.0
ICCollector current - Continuous 500
TJ, Tstg Junction and Storage Temperature -55 ~ +150
Symbol Parameter Max. Units
PN100
PN100A *MMBT100
*MMBT100A
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
TO-92
1
1. Emitter 2. Base 3. Collector
Mark: PN100/PN100A
SOT-23
B
E
C
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 2
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BVCBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 75 V
BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 45 V
BVEBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6.0 V
ICBO Collector-Base Cutoff Current VCB = 60V 50 nA
ICES Collector-Emiitter Cutoff Current VCE = 40V 50 nA
IEBO Emitter Cutoff Current VEB = 4V 50 nA
On Characteristics
hFE DC Current Gain IC = 100μA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V*
IC = 150mA, VCE = 5.0V *
100
100A
100
100A
100
100A
80
240
100
300
100
100
100
450
600
350
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA 0.2
0.4 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA 0.85
1.0 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product VCE = 20V, IC = 20mA 250 MHz
Cobo Output Capacitance VCB = 5.0V, f = 1.0MHz 4.5 pF
NF Noise Figure IC = 100μA, VCE = 5.0V
RG = 2.0kΩ, f = 1.0KHz 100
100A 5.0
4.0 dB
dB
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 3
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Input and Output Capacitance
vs Reverse Voltag
vs Collector Current
10 20 30 50 100 200 300 500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
Vce = 5V
Vol tage vs Collector Cu rren t
110100400
0.1
0.2
0.3
0.4
I - CO LLECTOR CUR RENT (m A)
V - CO LL ECTOR-EMITTER VO LTAGE ( V
)
C
CESAT
25 °C
- 4 0 °C
125 °C
β
= 10
Base-Emitter Saturation
Volt a ge vs Collecto r C u rrent
0.1 1 10 100 300
0.2
0.4
0.6
0.8
1
I - COLLE C TOR CUR RE NT (m A)
V - CO LLECTO R- EM ITTER VOLTA GE (V
)
β
= 10
C
BESAT
25 °C
- 40 °C
125 °C
Collector Current
110100500
0.2
0.4
0.6
0.8
1
I - COLLEC TOR CURRENT ( mA)
V - B AS E-E MITTER O N VO L TAGE (V
)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
25 50 75 100 125 15
0
0.1
1
10
T - A MBIENT TEMPERATUR E ( C)
I - COLLECTOR CU RR ENT (nA)
A
CBO
V = 6 0V
°
CB
0.1 1 10 10
0
0.1
1
10
100
V - COLLECTO R VOLTAGE (V)
CA PA CITANC E (pF)
Cib
Cob
f = 1.0 M Hz
ce
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 4
Typical Characteristics (Continued)
Figure 7. Switching Times vs
Collector Current Figure 8. Power Dissipation vs
Ambient Temperature
10 20 30 50 100 200 30
0
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TIME (n S)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
ts
td
tftr
025507510012515
0
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 5
Package Dimension (TO92)
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 6
Package Dimension (SOT23)
PN100/PN100A/MMBT100/MMBT100A NPN General Purpose AmplifierPN100/PN100A/MMBT100/MMBT100A
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN100/PN100A/MMBT100 /MMBT100A Rev. C1 7
Rev. I31
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHA NGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP-SPM™
Power220®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet cont ains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
