APT25GP120BDQ1(G) 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* (R) *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT (R) TO -2 47 The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * 100 kHz operation @ 800V, 11A * Low Gate Charge * 50 kHz operation @ 800V, 19A * Ultrafast Tail Current shutoff * RBSOA Rated G C E C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT25GP120BDQ1(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 69 I C2 Continuous Collector Current @ TC = 110C 33 I CM RBSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 90 @ TC = 150C Reverse Bias Safe Operating Area @ TJ = 150C 90A @ 960V Total Power Dissipation Watts 417 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350A) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 4.5 6 3.3 3.9 Units 1200 (VCE = VGE, I C = 1mA, Tj = 25C) 3 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) TYP 3.0 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Volts 350 2 Gate-Emitter Leakage Current (VGE = 20V) 3000 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A nA 6-2005 V(BR)CES MIN Rev A Characteristic / Test Conditions 050-7457 Symbol DYNAMIC CHARACTERISTICS Symbol APT25GP120BDQ1(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge RBSOA td(on) tr td(off) tf Eon1 40 Gate Charge 7.5 VGE = 15V 110 500 440 Inductive Switching (125C) 12 VCC = 600V 14 VGE = 15V 110 RG = 5 90 500 I C = 25A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 J 1090 6 Current Fall Time ns 39 TJ = +25C Turn-off Delay Time nC 70 RG = 5 Current Rise Time V A 14 I C = 25A Turn-on Delay Time pF 90 12 5 UNIT 50 VCC = 600V 4 MAX 15 Inductive Switching (25C) Current Fall Time Turn-off Switching Energy tf f = 1 MHz TJ = 150C, R G = 5, VGE = Turn-off Delay Time Eoff td(off) 200 VGE = 15V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V 15V, L = 100H,VCE = 960V Current Rise Time Eon2 td(on) 2090 I C = 25A Turn-on Delay Time TYP Capacitance VCE = 600V Reverse Bias Safe Operating Area Turn-on Switching Energy MIN TJ = +125C ns J 1575 6 1185 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RJC Junction to Case (IGBT) RJC Junction to Case (DIODE) WT Package Weight MIN TYP MAX .30 1.18 5.9 UNIT C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7457 Rev A 6-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 60 60 50 50 IC, COLLECTOR CURRENT (A) TJ = 25C 20 TJ = 125C 10 0 TJ = -55C 40 TJ = 25C 20 TJ = 125C 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 50A 4.5 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 4.0 IC = 25A 3.5 3.0 IC = 12.5A 2.5 2.0 1.5 1.0 0.5 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.02 0.98 0.94 0.90 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature J VCE =240V 12 VCE =600V 10 8 VCE = 480V 6 4 2 0 20 40 60 80 100 GATE CHARGE (nC) 120 FIGURE 4, Gate Charge 1.10 1.06 I = 25A C T = 25C 14 0 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 5.0 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 VGE, GATE-TO-EMITTER VOLTAGE (V) 60 FIGURE 2, Output Characteristics (TJ = 125C) 16 5.0 4.5 IC = 50A 4.0 3.5 IC = 25A 3.0 IC = 12.5A 2.5 2.0 1.5 1.0 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 100 IC, DC COLLECTOR CURRENT(A) IC, COLLECTOR CURRENT (A) 80 TJ = 125C 10 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25C) 250s PULSE TEST<0.5 % DUTY CYCLE TJ = 25C 20 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 100 30 90 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 6-2005 30 40 Rev A 40 APT25GP120BDQ1(G) 050-7457 IC, COLLECTOR CURRENT (A) TYPICAL PERFORMANCE CURVES td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 14 VGE = 15V 12 10 8 6 4 VCE = 600V T = 25C, TJ =125C 2 RJ = 5 G L = 100H 0 35 25 tf, FALL TIME (ns) tr, RISE TIME (ns) 20 15 10 TJ = 25 or 125C,VGE = 15V VGE =15V,TJ=25C 40 20 VCE = 600V RG = 5 L = 100 H RG = 5, L = 100H, VCE = 600V 60 40 5 0 0 G TJ = 125C,VGE =15V 2500 2000 1500 1000 500 TJ = 25C, VGE = 15V 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500 V = 600V CE V = +15V GE R = 5 3000 TJ = 125C, VGE = 15V 80 20 EOFF, TURN OFF ENERGY LOSS (J) EON2, TURN ON ENERGY LOSS (J) 60 100 3500 TJ = 25C,VGE =15V 0 V = 600V CE V = +15V GE R = 5 G 2000 TJ = 125C, VGE = 15V 1500 1000 500 TJ = 25C, VGE = 15V 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4500 3500 V = 600V CE V = +15V GE T = 125C 4000 Eon2,50A J 3500 3000 Eoff,50A 2500 Eon2,25A 2000 1500 Eoff,25A Eon2,12.5A 1000 500 0 Eoff,12.5A 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J) VGE =15V,TJ=125C 80 120 RG = 5, L = 100H, VCE = 600V 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6-2005 100 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 30 Rev A 120 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 050-7457 APT25GP120BDQ1(G) 140 16 V = 600V CE V = +15V GE R = 5 3000 Eon2,50A G 2500 2000 Eoff,25A 1000 Eon2,12.5A 500 0 Eon2,25A Eoff,50A 1500 Eoff,12.5A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES IC, COLLECTOR CURRENT (A) 5,000 P C, CAPACITANCE ( F) Cies 1,000 500 Coes 100 50 APT25GP120BDQ1(G) 100 10,000 Cres 90 80 70 60 50 40 30 20 10 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.30 D = 0.9 0.25 0.7 0.20 0.5 0.15 Note: PDM ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.3 0.10 t1 t2 0.05 0 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.173 0.171 Case temperature(C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 T = 125C J T = 75C C D = 50 % V = 800V CE R = 5 max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RJC G 5 10 15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 6-2005 0.00833 F 50 Rev A 0.128 Power (watts) 100 050-7457 RC MODEL Junction temp (C) FMAX, OPERATING FREQUENCY (kHz) 182 APT25GP120BDQ1(G) Gate Voltage 10% APT15DQ120 T J = 125 C t d(on) V CE IC V CC tr Collector Current 90% 5% A 5% 10% Collector Voltage Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage T J = 125 C td(off) A V CE tf Collector Voltage 100uH 90% Collector Current Switching Energy Rev A 6-2005 Figure 23, Turn-off Switching Waveforms and Definitions 050-7457 V CLAMP 0 10% IC B A DRIVER* Figure 24, EON1 Test Circuit D.U.T. TYPICAL PERFORMANCE CURVES APT25GP120BDQ1(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM All Ratings: TC = 25C unless otherwise specified. APT25GP120BDQ1(G) Characteristic / Test Conditions Maximum Average Forward Current (TC = 127C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 29 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) UNIT Amps 110 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP MAX IF = 25A 3.24 IF = 50A 4.03 IF = 25A, TJ = 125C 2.91 UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J - 21 trr Reverse Recovery Time - 240 Qrr Reverse Recovery Charge - 260 - 3 - 290 ns - 960 nC - 6 - 130 ns - 1340 nC - 19 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 800V, TC = 25C Maximum Reverse Recovery Current trr IRRM IF = 15A, diF/dt = -200A/s IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C Maximum Reverse Recovery Current ns nC - - Amps Amps D = 0.9 1.00 0.7 0.80 0.60 0.5 0.40 0.3 Note: PDM t1 t2 0.20 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp. (C) 0.676 0.00147 0.504 0.0440 Power (watts) Case temperature. (C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL 6-2005 10-5 Rev A 0 SINGLE PULSE 050-7457 ZJC, THERMAL IMPEDANCE (C/W) 1.20 trr, REVERSE RECOVERY TIME (ns) TJ = 175C 50 TJ = 125C 40 TJ = 25C 30 TJ = -55C 20 10 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 0 Qrr, REVERSE RECOVERY CHARGE (nC) 2500 T = 125C J V = 800V R 30A 2000 1500 15A 1000 7.5A 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 trr 1.0 trr 0.8 Qrr CJ, JUNCTION CAPACITANCE (pF) 7.5A 150 100 25 T = 125C J V = 800V 30A R 20 15 15A 10 7.5A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of ChangeTum tes35 Duty cycle = 0.5 T = 175C J 30 20 15 5 0 80 6-2005 15A 200 10 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature Rev A 250 25 0.2 050-7457 30A 300 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM 0.4 70 60 50 40 30 20 10 0 R 0 Qrr 0.6 0.0 T = 125C J V = 800V 350 50 IRRM, REVERSE RECOVERY CURRENT (A) 0 APT25GP120BDQ1(G) 400 IF(AV) (A) IF, FORWARD CURRENT (A) 60 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT25GP120BDQ1(G) Vr diF /dt Adjust +18V APT10078BLL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 33. Diode Test Circui t 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 34, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Collector (Cathode) 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 1.01 (.040) 1.40 (.055) Gate Collector (Cathode) Emitter (Anode) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 6-2005 1.65 (.065) 2.13 (.084) Rev A 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 050-7457 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123)