Single N-channel Trench MOSFET 30V, 100.0A, 2.9m Features General Description The MDU1517 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1517 is suitable device for DC to DC converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 100.0A @VGS = 10V RDS(ON) (MAX) < 2.9m @VGS = 10V < 4.4m @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V 20 V VGSS TC=25oC TC=70oC Continuous Drain Current (1) o TA=25 C 100.0 ID TA=70oC Pulsed Drain Current IDM TC=25 C Power Dissipation o TA=25 C Single Pulse Avalanche Energy Junction and Storage Temperature Range 100 A 73.5 PD TA=70oC (2) A 32.9(3) 26.2(3) o TC=70oC 96.0 47.0 W 5.5(3) 3.5(3) EAS 187 TJ, Tstg -55~150 Symbol Rating RJA 22.7 RJC 1.7 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case May. 2011. Version 1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDU1517 - Single N-Channel Trench MOSFET 30V MDU1517 Part Number Temp. Range MDU1517RH o -55~150 C Package Packing Quantity Rohs Status PowerDFN56 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = 20V, VDS = 0V VGS = 10V, ID = 26A Drain-Source ON Resistance Forward Transconductance - 1 - 5 - - 0.1 - 2.5 2.9 - 3.6 4.2 VGS = 4.5V, ID = 21A - 3.7 4.4 VDS = 5V, ID = 10A - 46 - 31.1 41.5 51.9 14.9 19.8 24.8 - 8.1 - - 7.9 - 1891 2521 3151 TJ=125oC RDS(ON) gfs - V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 26A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss 186 248 310 Output Capacitance Coss 398 531 664 Turn-On Delay Time td(on) - 12.6 - - 12.1 - - 42.6 - - 11.2 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15.0V, ID = 26A , RG = 3.0 tf nC pF ns Rg f=1 MHz - 1.0 2.0 VSD IS = 26A, VGS = 0V - 0.8 1.1 V - 29.9 44.9 ns - 21.4 32.1 nC Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 26A, dl/dt = 100A/s Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS =.34.0A, VDD = 27V, VGS = 10V. 3. T < 10sec. May. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd. MDU1517 - Single N-Channel Trench MOSFET 30V Ordering Information 8 4.0V 80 ID, Drain Current [A] Drain-Source On-Resistance [m] VGS = 10V 90 4.5V 70 5.0V 60 50 3.5V 40 30 20 6 VGS = 4.5V 4 VGS = 10V 2 3.0V 10 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 30 35 40 45 50 55 60 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 100 Notes : 1. VGS = 10 V 2. ID = 20.0 A 1.6 Notes : ID = 26.0A RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 25 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 1.4 1.2 1.0 0.8 80 60 40 20 TA = 25 0.6 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 TJ, Junction Temperature [ C] VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage o 18 100 TA=25 Notes : VDS = 5V 10 12 10 25 -IS [A] ID, Drain Current [A] 15 9 6 1 3 0 0 1 2 3 4 0.1 0.3 5 VGS, Gate-Source Voltage [V] 0.5 0.6 0.7 0.8 0.9 1.0 -VSD [V] Fig.5 Transfer Characteristics May. 2011. Version 1.2 0.4 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU1517 - Single N-Channel Trench MOSFET 30V 100 Note : ID = 26A VDS = 15V Ciss 8 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 Capacitance [pF] 2500 6 4 2 2000 1500 1000 Crss 500 0 0 0 4 8 12 16 20 24 28 32 36 40 0 44 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss Fig.8 Capacitance Characteristics 3 120 Operation in This Area is Limited by R DS(on) 100 10 ms ID, Drain Current [A] ID, Drain Current [A] 10 2 100 ms 10s 10 1 10 0 1s DC 60 40 20 Single Pulse TJ=Max rated TC=25 10 80 -1 -1 0 10 1 10 0 25 2 10 10 50 75 100 125 150 TA, Case Temperature [] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 Z JA(t), Thermal Response 10 0 D=0.5 10 0.2 0.1 -1 10 0.05 0.02 -2 10 0.01 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve May. 2011. Version 1.2 4 MagnaChip Semiconductor Ltd. MDU1517 - Single N-Channel Trench MOSFET 30V 3500 10 PDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e May. 2011. Version 1.2 5 Max 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 0 12 MagnaChip Semiconductor Ltd. MDU1517 - Single N-Channel Trench MOSFET 30V Package Dimension MDU1517 - Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 2011. Version 1.2 6 MagnaChip Semiconductor Ltd.