MSA-0736
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Features
•Cascadable 50Ω Gain Block
•Low Operating Voltage: 4.0 V Typical Vd
•3 dB Bandwidth: DC to 2.4 GHz
•13.0 dB Typical Gain at 1.0 GHz
•Unconditionally Stable (k>1)
•Cost Effective Ceramic Microstrip Package
Description
The MSA-0736 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC)
housed in a cost effective, microstrip package. This
MMIC is designed for use as a general purpose 50Ω gain
block. Typical applications include narrow and broad
band IF and RF amplifiers in industrial and military
applications.
The MSA-series is fabricated using Avago’s 10 GHz fT,
25 GHz fMAX, silicon bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold met-
allization to achieve excellent performance, unifor-
mity and reliability. The use of an external bias resistor
for temperature and current stability also allows bias
flexibility.
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 5 V
V
d
= 4.0 V
RFC (Optional)
IN OUT
MSA
4
1
2
3
36 micro-X Package
2
MSA-0736 Absolute Maximum Ratings
Parameter Absolute Maximum[1]
Device Current 60 mA
Power Dissipation[2,3] 275 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150°C
Thermal Resistance[2,5]:
θjc = 155°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 157°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. Ths small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
GPPower Gain (|S21|2) f = 0.1 GHz dB 12.5 13.5 14.5
∆GPGain Flatness f = 0.1 to 1.3 GHz dB ±0.6 ±1.0
f3 dB 3 dB Bandwidth GHz 2.4
Input VSWR f = 0.1 to 2.5 GHz 2.0:1
Output VSWR f = 0.1 to 2.5 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5
P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5
IP3Third Order Intercept Point f = 1.0 GHz dBm 19.0
tDGroup Delay f = 1.0 GHz psec 140
VdDevice Voltage V 3.6 4.0 4.4
dV/dT Device Voltage Temperature Coefficient mV/°C –7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Id = 22 mA, ZO = 50 ΩUnits Min. Typ. Max.
VSWR
Ordering Information
Part Numbers No. of Devices Comments
MSA-0736-BLKG 100 Bulk
MSA-0736-TR1G 1000 7" Reel
3
MSA-0736 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 22 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .13 –3 13.5 4.71 175 –19.0 .112 2 .29 –7
0.2 .13 –6 13.4 4.69 170 –18.5 .119 3 .29 –12
0.4 .14 –13 13.4 4.68 160 –18.6 .118 6 .29 –24
0.6 .16 –20 13.3 4.64 150 –18.4 .120 7 .28 –35
0.8 .19 –29 13.2 4.60 140 –18.1 .125 8 .28 –47
1.0 .21 –40 12.9 4.42 129 –17.6 .131 10 .27 –58
1.5 .27 –71 12.2 4.07 104 –16.5 .149 10 .24 –83
2.0 .32 –107 11.5 3.74 79 –15.6 .165 7 .19 –103
2.5 .37 –134 10.3 3.26 62 –15.3 .173 5 .15 –113
3.0 .43 –160 8.8 2.76 44 –15.4 .171 0 .14 –120
3.5 .47 –179 7.5 2.37 27 –15.3 .173 –4 .16 –120
4.0 .49 167 6.2 2.05 12 –15.2 .168 –6 .21 –121
5.0 .51 134 4.0 1.59 –15 –15.2 .173 –11 .28 –135
6.0 .60 96 2.1 1.27 –42 –14.6 .185 –16 .29 –167
S11 S21 S12 S22
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 22 mA.
102345
V
d
(V)
Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.
0
2
4
6
8
10
12
14
0
10
20
30
40
Gain Flat to DC
I
d
(mA)
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
I
d
(mA)
G
p
(dB)
4
6
8
10
12
16
14
10 20 30 40
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
3
4
5
6
12
13
14
–25–55 +25 +85 +125
4
5
6
P
1 dB
(dBm)
NF (dB)
NF
G
p
(dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=22mA.
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
–3
0
3
6
9
12
15
P
1 dB
(dBm)
I
d
= 40 mA
I
d
= 15 mA
I
d
= 22 mA
4.5
4.0
5.0
5.5
6.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0
P
1 dB
G
P
I
d
= 15 mA
I
d
= 22 mA
I
d
= 40 mA
Typical Performance, TA = 25°C
(unless otherwise noted)
36 micro-X Package Dimensions
13
4
2
SOURCE
SOURCE
DRAIN
GATE
2.15
(0.085)
2.11 (0.083) DIA.
0.508
(0.020)
2.54
(0.100)
4.57 ± 0.25
0.180 ± 0.010
0.15 ± 0.05
(0.006 ± 0.002)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
0.56
(0.022)
1.45 ± 0.25
(0.057 ± 0.010)
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2741EN
AV02-0305EN - April 12, 2007
