0.038 (0.97)
0.100 (2.54)
0.050 (1.27)
45°
0.046 (1.16)
0.036 (0.92)
13
0.030 (0.76)
NOM
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.500 (12.7)
MIN
0.255 (6.47)
0.225 (5.71)
Ø0.020 (0.51) 3X
2
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Narrow reception angle
• Devices can be used as a photodiode by wiring the collector and base leads.
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The L14P1/L14P2 are silicon phototransistors mounted in a narrow angle, TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300309 6/01/01 1 OF 4 www.fairchildsemi.com
1
EMITTER
(CONNECTED T O CASE)
COLLECTOR
3
BASE 2
SCHEMATIC
HERMETIC SILICON PHOTOTRANSISTOR
L14P1 L14P2
www.fairchildsemi.com 2 OF 4 6/01/01 DS300309
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BV CEO 30 — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BV EBO 5.0 — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BVCBO 40 — V
Collector-Emitter Leakage VCE = 12 V, Ee = 0 ICEO — 100 nA
Reception Angle at 1/2 Sensitivity θ±8 Degrees
On-State Collector Current L14P1 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) IC(ON) 6.5 — mA
On-State Collector Current L14P2 Ee = 0.5 mW/cm2, VCE = 5 V(7,8)IC(ON) 13.0 mA
On-State Photodiode Current Ee = 0.3 mW/cm2, VCB = 5 V ICB(ON) 6.0 µA
Rise Time IC= 10 mA, VCC = 5 V, RL=100 Ωtr10 µs
Fall Time IC= 10 mA, VCC = 5 V, RL=100 Ωtf12 µs
Saturation Voltage L14P1 IC= 0.8 mA, Ee= 0.6 mW/cm2(7,8) VCE(SAT) — 0.40 V
Saturation Voltage L14P2 IC= 1.6 mA, Ee= 0.6 mW/cm2(7,8) VCE(SAT) — 0.40 V
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
Storage Temperature TSTG -65 to +150 °C
Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
Collector to Emitter Breakdown Voltage VCEO 30 V
Collector to Base Breakdown Voltage VCBO 40 V
Emitter to Base Breakdwon Voltage VEBO 5V
Power Dissipation(TA= 25°C)(1) PD300 mW
Power Dissipation(TC= 25°C)(2) PD600 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
HERMETIC SILICON PHOTOTRANSISTOR
L14P1 L14P2
Figure 1. Light Current vs. Collector to Emitter Voltage
.01 .02
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
.01
.02
.04
.06
.08
.1
.2
.4
.8
.6
1
4
8
6
2
10
.04 .06.08.1 .2 .4 .6 .8 1 2 4 6 8 10 20
IL, NORMALIZED LIGHT CURRENT
Figure 3. Dark Current vs. Temperature
0.1020
103
102
10
1
104
105
10 40 50
ICEO, NORMLIZED DARK CURRENT
30 7060 90 10080
Figure 2. Light Current vs. Temperature
.01
.02
.04
.06
.08
.1
.2
.4
.6
.8
.1 .2 .4 .8
Ee - TOTAL IRRADIANCE IN mW/cm2
1
2
4
.6 2120
IL, NORMALIZED LIGHT CURRENT
IL, NORMALIZED LIGHT CURRENT
46810
TA, TEMPERATURE (
°C)
TA, TEMPERATURE (
°C)
NORMALIZED TO:
TA = 25
°C
VCE = 10 V
Figure 4. Light Current vs. Temperature
.01
.02
.04
.06
.08
.1
.2
.4
.8
.6
1
2
4
-50 -26 26 50 75 1000
Ee = 0.2 mW/cm2
Ee = 0.5 mW/cm2
Ee = 2 mW/cm2
Ee = 5 mW/cm2
Ee = 10 mW/cm2
Ee = 1 mW/cm2
Ee = 20 mW/cm2
Ee = 0.1 mW/cm2
NORMALIZED TO:
Ee = 1 mW/cm2
VCE = 5 V
TA = 25
°C
PULSED
tp = 300 µsec
NORMALIZED TO:
VCE = 5 V
Ee = 1 mW/cm2
TA = 25
°C
PULSED
tp = 300 µsec
NORMALIZED TO: IF = 5 mA, VCE = 5 V, TA = 25
°C
PULSED: GAAS SOURCE (1N6265), tp = 300 µsec, TJ = TA
Figure 5. Angular and Spectral Response
80
-40 0
100
10
60
40
20
90
110
60
50
30
.8
1
.6
.4
.2
.9
.1
.7
.5
.3
-20 40 11001000500 600 700 800 900
RELATIVE OUTPUT (%)
RELATIVE RESPONSE
20
λ, WAVE LENGTH
(NANOMETERS
)
θ, ANGULAR DISPLACEMENT
FROM OPTICAL AXIS
(DEGREES)
IF = 50 mA
tr and tf, NORMALIZED SWITCHING LIGHT SPEED
ICE, OUTPUT CURRENT (mA
)
Figure 6. Switching Speed vs. Bias
RISE TIME FALL TIME
.1
.2
.4
.6
.8
1
2
4
8
6
10
20
40
60
80
100
.1 .2 .6.4 .8 1 42108.1 .2 .6.4 .8 1 428106
NORMALIZED TO:
VCC = 5 V
IC = 10 mA
RL = 100 Ω
TA = 25
°C
NORMALIZED TO:
VCC = 5 V
IC = 10 mA
RL = 100 Ω
TA = 25
°C
RL = 1000 ΩRL = 500 ΩRL = 250 Ω
RL = 100 Ω
RL = 50 Ω
RL = 1000 ΩRL = 500 ΩRL = 250 Ω
RL = 100 Ω
RL = 50 Ω
20 mA
10 mA
5 mA
2 mA
1 mA
0.5 mA
DS300309 6/01/01 3 OF 4 www.fairchildsemi.com
HERMETIC SILICON PHOTOTRANSISTOR
L14P1 L14P2
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300309 6/01/01 4 OF 4 www.fairchildsemi.com
HERMETIC SILICON PHOTOTRANSISTOR
L14P1 L14P2
