HERMETIC SILICON PHOTOTRANSISTOR L14P1 L14P2 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3 0.038 (0.97) 0.046 (1.16) 0.036 (0.92) O0.020 (0.51) 3X 45 BASE 2 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 EMITTER DESCRIPTION The L14P1/L14P2 are silicon phototransistors mounted in a narrow angle, TO-18 package. FEATURES * Hermetically sealed package * Narrow reception angle * Devices can be used as a photodiode by wiring the collector and base leads. 2001 Fairchild Semiconductor Corporation DS300309 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14P1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25C)(1) Power Dissipation (TC = 25C)(2) L14P2 (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 30 40 5 300 600 Unit C C C C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/C above 25C ambient. 2. Derate power dissipation linearly 6.00 mW/C above 25C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14P1 On-State Collector Current L14P2 On-State Photodiode Current Rise Time Fall Time Saturation Voltage L14P1 Saturation Voltage L14P2 www.fairchildsemi.com (TA =25C) (All measurements made under pulse conditions) TEST CONDITIONS SYMBOL MIN IC = 10 mA, Ee = 0 IE = 100 A, Ee = 0 IC = 100 A, Ee = 0 VCE = 12 V, Ee = 0 BVCEO BVEBO BVCBO ICEO IC(ON) IC(ON) ICB(ON) tr tf VCE(SAT) VCE(SAT) 30 5.0 40 -- Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.3 mW/cm2, VCB = 5 V IC = 10 mA, VCC = 5 V, RL =100 IC = 10 mA, VCC = 5 V, RL =100 IC = 0.8 mA, Ee = 0.6 mW/cm2(7,8) IC = 1.6 mA, Ee = 0.6 mW/cm2(7,8) 2 OF 4 TYP MAX UNITS -- -- -- 100 0.40 0.40 V V V nA Degrees mA mA A s s V V 6/01/01 DS300309 8 6.5 13.0 -- 6.0 10 12 -- -- HERMETIC SILICON PHOTOTRANSISTOR L14P1 Figure 1. Light Current vs. Collector to Emitter Voltage NORMALIZED TO: Ee = 1 mW/cm2 VCE = 5 V TA = 25C PULSED tp = 300 sec 2 1 .8 .6 .4 Figure 2. Light Current vs. Temperature 4 Ee = 20 mW/cm2 Ee = 10 mW/cm2 IL, NORMALIZED LIGHT CURRENT IL, NORMALIZED LIGHT CURRENT 10 8 6 4 Ee = 2 mW/cm2 Ee = 1 mW/cm2 Ee = 0.5 mW/cm2 Ee = 5 mW/cm2 .2 Ee = 0.2 mW/cm2 .1 .08 .06 .04 Ee = 0.1 mW/cm2 2 1 .8 .6 .4 .2 NORMALIZED TO: VCE = 5 V Ee = 1 mW/cm2 TA = 25C PULSED tp = 300 sec .1 .08 .06 .04 .02 .01 .1 .02 .01 .01 .02 .04 .06 .08 .1 .2 .4 .6 .8 1 2 4 6 8 10 L14P2 .2 .4 .6 .8 1 2 4 6 8 10 20 Ee - TOTAL IRRADIANCE IN mW/cm2 20 VCE , COLLECTOR TO EMITTER VOLTAGE (V) Figure 4. Light Current vs. Temperature 4 Figure 3. Dark Current vs. Temperature 104 103 102 10 5 mA 1 .8 .6 .4 2 mA .2 1 mA .1 .08 .06 0.5 mA .04 1 .02 0.1 IF = 50 mA 20 mA 10 mA 2 NORMALIZED TO: TA = 25C VCE = 10 V IL, NORMALIZED LIGHT CURRENT ICEO, NORMLIZED DARK CURRENT 105 20 10 0 30 40 50 60 70 80 90 NORMALIZED TO: IF = 5 mA, VCE = 5 V, TA = 25C PULSED: GAAS SOURCE (1N6265), tp = 300 sec, TJ = TA 100 .01 -50 TA, TEMPERATURE (C) -26 0 26 50 75 100 TA, TEMPERATURE (C) Figure 6. Switching Speed vs. Bias Figure 5. Angular and Spectral Response 1 90 .9 80 .8 60 .7 60 .6 50 .5 40 .4 30 .3 20 .2 10 .1 -40 -20 0 20 40 500 600 700 800 900 1000 1100 , ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES) , WAVE LENGTH (NANOMETERS) tr and tf, NORMALIZED SWITCHING LIGHT SPEED 100 RELATIVE RESPONSE RELATIVE OUTPUT (%) 110 100 80 60 40 RL = 1000 6/01/01 RL = 250 RL = 500 RL = 250 10 8 6 4 2 1 .8 .6 .4 .2 .1 .1 RL = 100 RL = 100 NORMALIZED TO: VCC = 5 V IC = 10 mA RL = 100 TA = 25C .2 .4 .6 .8 1 RISE TIME DS300309 RL = 1000 RL = 500 20 3 OF 4 NORMALIZED TO: VCC = 5 V IC = 10 mA RL = 100 TA = 25C RL = 50 2 4 8 10 .1 .2 .4 .6 .8 1 ICE, OUTPUT CURRENT (mA) RL = 50 2 4 6 8 10 FALL TIME www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14P1 L14P2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300309 6/01/01 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 www.fairchildsemi.com