2SK2624ALS
No. A0362-1/5
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0362B
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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D0507 TI IM TC-00001048 / 22107 TI IM TC-00000529 / 72006QB MS IM TC-00000028
SANYO Semiconductors
DATA SHEET
2SK2624ALS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•Low ON-resistance.
•Low Qg.
•Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID3.5 A
Drain Current (Pulse) IDP PW 10µs, duty cycle 1% 12 A
Allowable Power Dissipation PD2.0 W
Tc=25°C (SANYO’s ideal heat dissipation condition)*1
25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *2 EAS 49 mJ
Avalanche Current *3 IAV 3A
*1 SANYO
’
s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=10mH, IAV=3A
*3 L 10mH, single pulse
Marking : K2624
2SK2624ALS
No. A0362-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS VDS=600V, VGS=0V 1.0 mA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward T ransfer Admittance yfs VDS=10V, ID=1.8A 1.0 2.0 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=1.8A, VGS=15V 2.0 2.6
Input Capacitance Ciss VDS=20V, f=1MHz 550 pF
Output Capacitance Coss VDS=20V, f=1MHz 165 pF
Reverse T ransfer Capacitance Crss VDS=20V, f=1MHz 85 pF
Total Gate Charge Qg VDS=200V, ID=3A, VGS=10V 15 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns
Rise T ime trSee specified Test Circuit. 17 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 40 ns
Fall T ime tfSee specified Test Circuit. 22 ns
Diode Forward Voltage VSD IS=3A, VGS=0V 0.98 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7509-002
Avalanche Resistance Test Circuit
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5 2.8
123
10.0 3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=1µs
D.C. 0.5%
P.G RGS
50
G
S
ID=1.8A
RL=111
VDD=200V
VGS=15V VOUT
2SK2624ALS
D
50
50
RG
VDD
L
15V
0V
2SK2624ALS
2SK2624ALS
No. A0362-3/5
td(on)
td(off)
tf
tr
7
5
3
2
100
7
5
3
2
10
1.0 57 325
1.0 IT01027
VDD=200V
VGS=15V
0.1
100
0.001
10
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
0 0.3 0.6 1.50.9 1.2
VGS=0V
IT01026
Tc=75°C
--25
°
C
25°C
--50 --25
0
5
6
2
1
3
4
50 100 1500 25 75 125
Tc= --25°C
25°C
75°C
IT01025
VDS=10V VDS=10V
ID=1mA
5
10
1.0
2
3
0.1
7
5
2
3
7
0.1 73
1.0 257325 10
IT01024
Tc=25°C
ID=3.0A
1.8A
1.0A
0
2.5
3.0
3.5
4.0
2.0
1.5
1.0 82122014 16 186104
IT01022
ID=1.8A, VGS=15V
ID=1.8A, VGS=10V
--50
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
6.5
2.0
1.5
1.0
0.5
050--25 15025 75 100 1250
IT01023
yfs -- ID
IS -- VSD
VGS(off) -- Tc
SW Time -- ID
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
Cutoff Voltage, VGS(off) -- V
Case Temperature, Tc -- °C
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
RDS(on) -- VGS RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) --
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Case Temperature, Tc -- °C
ID -- VDS ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
25°C
75°C
0
3.0
3.5
4.0
4.5
5.0
2.5
2.0
1.5
0.5
1.0
00 2 6 12 14 16 18108204
VDS=10V
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
24 810613 795
VGS=6V
10V
15V
8V
7V
Tc= --25°C
IT01020 IT01021
2SK2624ALS
No. A0362-4/5
PD -- TcPD -- Ta
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
2.5
2.0
1.5
1.0
0.5
00 20 40 60 80 100 120 140 160
IT01031
30
25
20
15
10
5
00 20 40 60 80 100 120 140 160
IT01030
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
IT10478
Ambient Temperature, Ta -- °C
10µs
100
µ
s
100ms
1ms
10ms
DC operation
IDP=12A
ID=3.5A
1.0
0.1
0.01
3
10
2
5
7
3
2
5
7
3
2
5
7
3
2
5
7
100
1.0 23 57
10 23 57
100 23 57
1000
IT10851
0
2
5
1000
100
3
10
7
2
5
3
7
51015202530
IT01028
Coss
Ciss
Crss
f=1MHz
Operation in
this area is
limited by RDS(on).
PW 10µs
Ciss, Coss, Crss -- VDS A S O
Tc=25°C
Single Pulse
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
2SK2624ALS
No. A0362-5/5
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Note on usage : Since the 2SK2624ALS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of December, 2007. Specifications and information herein are subject
to change without notice.
