TLP620,TLP620−2,TLP620−4
1 2017-07-10
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP620, TLP620−2, TLP620−4
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor
optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP620−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP620−4 provides four isolated channels in a sixteen plastic
D I P.
• Collector−emitter voltage: 55V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Pin Configurations (top view)
TLP620
1
2
4
3
1 : ANODE
CATHODE
2 : CATHODE
ANODE
3 : EMITTER
4 : COLLECTOR
1
2
4
3
5
6
7
8
TLP620-2
1, 3 : ANODE
CATHODE
2, 4 : CATHODE
ANODE
5, 7 : EMITTER
6, 8 : COLLECTOR
TLP620-4
1
2
4
3
5
6
7
8
9
10
11
12
13
14
15
16
1, 3, 5, 7 : ANODE, CATHODE
2, 4, 6, 8 : CATHODE, ANODE
9, 11, 13, 15 : EMITTER
10, 12, 14, 16 : COLLECTOR
TOSHIBA
11−5B2
TOSHIBA
11−10C4
TOSHIBA
11−20A3
Unit: mm
Start of commercial production
1984/01
Unit: mm
Unit: mm
TLP620,TLP620−2,TLP620−4
2 2017-07-10
• Isolation voltage: 5000Vrms (min.)
• Safety Standards
• UL recognized : UL1577, File No. E67349
• cUL recognized : CSA Component Acceptance Service No. 5A
File No.E67349
• Option (D4) type
VDE approved : EN60747-5-5
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
(Note) When an EN 60747-5-5 approved type is needed,
please designate the “Option(D4)”.
7.62 mm pitch 10.16 mm pitch
standard type TLP×××F type
• Creepage distance : 6.4 mm (min) 8.0 mm (min)
Clearance : 6.4 mm (min) 8.0 mm (min)
Insulation thickness : 0.4 mm (min) 0.4 mm (min)
TLP620,TLP620−2,TLP620−4
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol
Rating
Unit
TLP620
TLP620−2
TLP620−4
LED
Forward current IF (RMS) 60 50 mA
Forward current derating ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA / °C
Pulse forward current IFP ±1 (100μs pulse, 100pps) A
Power dissipation (1 circuit) PD 100 70 mW
Power dissipation derating
(1 circuit) ΔPD / °C −1.2 (Ta ≥ 39°C) −0.7 (Ta ≥ 25°C) mW / °C
Junction temperature Tj 125 °C
Detector
Collector−emitter voltage VCEO 55 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 circuit) PC 150 100 mW
Collector power dissipation
derating (1 circuit) (Ta ≥ 25°C) ΔPC / °C −1.5 −1.0 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature Tsold 260 (10s) °C
Total package power dissipation
(1 circuit)
PT 250 150 mW
Total package power dissipation
derating (Ta ≥ 25°C, 1 circuit) ΔPT / °C −2.5 −1.5 mW / °C
Isolation voltage (Note1) BVS 5000 (AC, 1 min., RH ≤ 60%) Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
TLP620,TLP620−2,TLP620−4
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Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF (RMS) ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V
Forward current IF VF = ±0.7V ― 2.5 20 μA
Capacitance CT V = 0V, f = 1MHz ― 60 ― pF
Detector
Collector−emitter
breakdown voltage V (BR) CEO IC = 0.5mA 55 ― ― V
Emitter−collector
breakdown voltage V (BR) ECO IE = 0.1mA 7 ― ― V
Collector dark current ICEO
VCE = 24V ― 10 100 nA
VCE = 24V, Ta = 85°C ― 2 50 μA
Capacitance
(collector to emitter)
CCE VCE = 0V, f = 1MHz ― 10 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Current transfer ratio IC / IF IF = ±5mA, VCE = 5V
Rank GB
50 ― 600
%
100 ― 600
Saturated CTR IC / IF (sat) IF = ±1mA, VCE = 0.4V
Rank GB
― 60 ―
%
30 ― ―
Collector−emitter saturation
voltage VCE (sat)
IC = 2.4mA, IF = ±8mA ― ― 0.4
V
IC = 0.2 mA, IF = ±1 mA
Rank GB
― 0.2 ―
― ― 0.4
Off−state collector current IC (off) VF = ± 0.7V, VCE = 24V ― 1 10 μA
CTR symmetry (Note.) IC (ratio) IC (IF = −5mA) / IC (IF = +5mA) 0.33 ― 3 ―
Note : IC(ratio)=
5V)
CE
V,
F1
I
F
(I
C1
I
5V)
CE
V,
F2
I
F
(I
C2
I
==
==
TLP620,TLP620−2,TLP620−4
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance input to
output CS VS = 0 V, f = 1MHz ― 0.8 ― pF
Isolation resistance RS VS = 500V, R.H. ≤ 60% 1×1012 1014 ― Ω
Isolation voltage BVS
AC, 1 minute 5000 ― ―
Vrms
AC, 1 second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10V
IC = 2mA
RL = 100Ω
― 2 ―
μs
Fall time tf ― 3 ―
Turn−on time ton ― 3 ―
Turn−off time toff ― 3 ―
Turn−on time tON
RL = 1.9kΩ (Fig.1)
VCC = 5V, IF = ±16mA
― 2 ―
μs
Storage time ts ― 15 ―
Turn−off time tOFF ― 25 ―
Fig. 1 Switching time test circuit
IF
RL
VCC
VCE
VCE
tON
IF
tOFF
VCC
4.5V
0.5V
tS
TLP620,TLP620−2,TLP620−4
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TLP620-2
TLP620-4 IF(RMS) – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF(RMS) (mA)
100
0
−20
60
40
0 20 40 60 80 100
80
20
120
TLP620 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
240
−20
40
160
0 60 100 120
0
80
200
120
20 40 80
TLP620-2
TLP620-4 PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
120
0
−20
40
0 40
100
80
60
20
20 60 80 100 120
TLP620
IFP – DR
Duty cycle ratio DR
Allowable pulse forward current
IFP (mA)
3000
10
3 10−3 10−2 10−1 3
30
300
100
1000
500
50
3 3 100
Pulse width ≤ 100μs
Ta = 25°C
TLP620-2
TLP620-4 IFP – DR
Duty cycle ratio DR
Allowable pulse forward current
IFP (mA)
3000
1000
500
300
100
50
30
10
3 10−3 3 10−2 3 100
Pulse width ≤100μs
Ta = 25°C
10−1 3
TLP620
IF(RMS) – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF(RMS) (mA)
0
−20
80
40
20
0 20 40 60 80 100
60
100
120
TLP620,TLP620−2,TLP620−4
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ΔVF / ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
1
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.1 0.3 3 10 30
ID – Ta
Ambient temperature Ta (°C)
Collector dark current ID (μA)
0 40 80 120 160
101
100
10−1
10−2
10−3
10−4
VCE = 24V
10V
5V
IFP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
500
300
100
0 0.4 0.8 1.2 1.6 2.0
50
30
10
5
3
1
2.4
Pulse width≤10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
Collector current IC (mA)
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
80
60
40
20
0
0 2 4 8
6 10
Ta = 25°C
50mA
10mA
30mA
20mA
15mA
IF = 5mA
PC (MAX)
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
50
30
10
5
3
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
0.5
0.3
Ta = 25°C
IC – VCE
Collector-emitter voltage VCE (V)
25
20
15
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
5
Ta = 25°C
50mA
40mA
30mA
20mA
10mA
5mA
IF = 2mA
TLP620,TLP620−2,TLP620−4
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IF – VF
Forward voltage VF (V)
Forward voltage IF (mA)
60
−3
40
20
0
−20
−40
−2 −1 0 1 2 3
Ta = 25°C
500
300
50
30
5
0.3 1 3 10 30 100
Ta = 25°C
VCE = 5V
VCE = 0.4V
100
10
Sample B
Sample A
IC / IF – IF
Forward current IF (mA)
Current transfer ratio
IC / IF (%)
IC – VF
Forward voltage VF (V)
Collector current IC (mA)
100
0.03
0.8 1.3
50
30
10
5
3
1
0.5
0.3
0.1
0.05
0.01
0.9 1.0 1.1 1.2
Ta = 25°C
VCE = 0.4V
10V
5V
IC – IF
Forward current IF (mA)
Collector current IC (mA)
100
0.5
0.3 100
50
30
10
5
3
1
0.3
0.1
0.05
0.03
1 3 10 30
Ta = 25°C
VCE = 5V
VCE = 0.4V
Sample B
Sample A
TLP620,TLP620−2,TLP620−4
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IC – Ta
Ambient temperature Ta (°C)
100
50
30
1
−20 0 20 40 80 100
10
5
3
0.5
0.3
0.1
60
VCE = 5V
IF = 25mA
10mA
5mA
1mA
0.5mA
Collector current IC (mA)
1000
500
300
30
100
50
10
1 3 10 30 100
5
3
1
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
ts
tON
Switching Time – RL
Load resistance RL (kΩ)
Switching time (μs)
VCE (sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE (sat) (V)
−20 0 20 40 60 80 100
0.20
0.16
0.12
0.04
0
0.24
0.08
IF = 5mA
IC = 1mA
IF
VCC
RL
VCE
RBE
IF
VCE
tON
ts
tOFF
0.5V
4.5V
5V
ton, toff, ts Test condition
TLP620,TLP620−2,TLP620−4
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