LM2653
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LM2653 1.5A High Efficiency Synchronous Switching Regulator
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1FEATURES DESCRIPTION
The LM2653 switching regulator provides high
2• Efficiency up to 97% efficient power conversion over a 100:1 load range
• 4V to 14V Input Voltage Range (1.5A to 15 mA). This feature makes the LM2653 an
• 1.5V to 5.0V Adjustable Output Voltage ideal fit in battery-powered applications.
• 0.1ΩSwitch On Resistance Synchronous rectification is used to achieve up to
• 300 kHz Fixed Frequency Internal Oscillator 97% efficiency. At light loads, the LM2653 enters a
low power hysteretic or “sleep” mode to keep the
• 7 μA Shutdown Current efficiency high. In many applications, the efficiency
• Patented Current Sensing for Current Mode still exceeds 80% at 15 mA load. A shutdown pin is
Control available to disable the LM2653 and reduce the
• Input Undervoltage Lockout supply current to 7µA.
• Output Overvoltage Shutdown Protection All the power, control, and drive functions are
integrated within the ICs. The ICs contain patented
• Output Undervoltage Shutdown Protection current sensing circuity for current mode control. This
• Adjustable Soft-Start feature eliminates the external current sensing
• Adjustable PGOOD Delay resistor required by other current-mode DC-DC
• Current Limit and Thermal Shutdown converters.
The ICs have a 300 kHz fixed frequency internal
APPLICATIONS oscillator. The high oscillator frequency allows the
use of extremely small, low profile components.
• Webpad
• Personal Digital Assistants (PDAs) Protection features include thermal shutdown, input
undervoltage lockout, adjustable soft-start, cycle by
• Computer Peripherals cycle current limit, output overvoltage and
• Battery-Powered Devices undervoltage protections.
• Notebook Computer Video Supply
• Handheld Scanners
• GXM I/O and Core Voltage
• High Efficiency 5V Conversion
Typical Application
Efficiency vs Load Current
(VIN = 5V, VOUT = 3.3V)
Figure 1. Figure 2.
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1999–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)(3)
Input Voltage 15V
PGOOD Pin Voltage 15V
Feedback Pin Voltage −0.4V ≤VFB ≤5V
Power Dissipation (TA=25°C) (4) 893 mW
Junction Temperature Range −40°C ≤TJ≤+125°C
Storage Temperature Range −65°C to +150°C
Lead Temperature PW Package Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
Maximum Junction Temperature 150°C
ESD Susceptibility Human Body Model (3) 1 kV
(1) Absolute Maxmum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but device parameter specifications may not be specified under these conditions. For
specified specifications and test conditions, see Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) The human body model is a 100 pF capacitor discharged through a 1.5 kΩresistor into each pin.
(4) The maximum allowable power dissipation is calculated by using PDMAX = (TJMAX −TA)/θJA, where TJMAX is the maximum junction
temperature, TAis the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package. The 893
mW rating results from using 150°C, 25°C, and 140°C/W for TJMAX, TA, and θJA respectively. A θJA of 140°C/W represents the worst-
case condition of no heat sinking of the 16-pin TSSOP package. Heat sinking allows the safe dissipation of more power. The Absolute
Maximum power dissipation must be derated by 7.14 mW per °C above 25°C ambient. The LM2653 actively limits its junction
temperatures to about 165°C.
Operating Ratings(1)
Supply Voltage 4V ≤VIN ≤14V
(1) Absolute Maxmum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but device parameter specifications may not be specified under these conditions. For
specified specifications and test conditions, see Electrical Characteristics.
Electrical Characteristics
Specifications with standard typeface are for TJ= 25°C, and those in boldface type apply over full Operating Temperature
Range. VIN = 10V unless otherwise specified.
Symbol Parameter Conditions Typical (1) Limit (2) Units
VFB Feedback Voltage ILOAD = 900 mA 1.238 V
1.200 V(min)
1.263 V(max)
VOUT Output Voltage Line VIN = 4V to 12V 0.2 %
Regulation ILOAD = 900 mA
Output Voltage Load ILOAD = 10 mA to 1.5A 1.3 %
Regulation VIN = 5V
Output Voltage Load ILOAD = 200 mA to 1.5A 0.3 %
Regulation VIN = 5V
VINUV VIN Undervoltage Lockout Rising Edge 3.8 V
Threshold Voltage 3.95 V(max)
VUV_HYST Hysteresis for the Input 210 mV
Undervoltage Lockout
ICL Switch Current Limit VIN = 5V 2.0 A
VOUT = 2.5V 1.55 A(min)
2.60 A(max)
ISM Sleep Mode Threshold Current VIN = 5V, VOUT = 2.5V 100 mA
(1) All limits specified at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits
are 100% production tested. All limits at temperature extremes are specified via correlation using standard Statistical Quality Control
(SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
(2) Typical numbers are at 25°C and represent the most likely norm.
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Electrical Characteristics (continued)
Specifications with standard typeface are for TJ= 25°C, and those in boldface type apply over full Operating Temperature
Range. VIN = 10V unless otherwise specified.
Symbol Parameter Conditions Typical (1) Limit (2) Units
VHYST Sleep Mode Feedback Voltage 24 mV
Hysteresis
IQQuiescent Current 1.7 mA
2.0 mA(max)
IQSD Quiescent Current in Shutdown Pin Pulled Low 7 μA
Shutdown Mode 12/20 μA(max)
RDS(ON) High-Side or Low-Side ISWITCH = 1A 75 mΩ
MOSFET ON Resistance 130 mΩ(max)
RSW(ON) High-Side or Low-Side Switch ISWITCH = 1A 110 mΩ
On Resistance (MOSFET ON
Resistance + Bonding Wire
Resitstance)
ILSwitch Leakage 130 nA
Current—High Side
Switch Leakge Current—Low 130 nA
Side
VBOOT Bootstrap Regulator Voltage IBOOT = 1 mA 6.75 V
6.45/6.40 V(min)
6.95/7.00 V(max)
GMError Amplifier 1250 μmho
Transconductance
AVError Amplifier Voltage Gain 100
IEA_SOURCE Error Amplifier Source VIN = 3.6V, VFB = 1.17V, VCOMP = 2V 40 μA
Current 25/15 μA(min)
IEA_SINK Error Amplifier Sink Current VIN = 3.6V, VFB = 1.31V, VCOMP = 2V 65 μA
30 μA(min)
VEAH Error Amplifier Output Swing VIN = 4V, VFB = 1.17V 2.70 V
Upper Limit 2.50/2.40 V(min)
VEAL Error Amplifier Output Swing VIN = 4V, VFB = 1.31V 1.25 V
Lower Limit 1.35/1.50 V(max)
VDBody Diode Voltage IDIODE = 1.5A 1 V
FOSC Oscillator Frequency Measured at Switch Pin 300 kHz
VIN = 4V 280/255 kHz(min)
330/345 kHz(max)
DMAX Maximum Duty Cycle VIN = 4V 95 %
92 %(min)
ISS Soft-Start Current Voltage at the SS Pin = 1.4V 11 μA
7μA(min)
14 μA(max)
VOUTUV VOUT Undervoltage Lockout 81 %VOUT
Threshold Voltage 76 %VOUT(min)
84 %VOUT(max)
Hysteresis for VOUTUV 5 %VOUT
VOUTOV VOUT Overvoltage Lockout 108 %VOUT
Threshold Voltage 106 %VOUT(min)
114 %VOUT(max)
Hysteresis for VOUTOV 3 %VOUT
ILDELAY―LDELAY Pin Source Current 5 μA
SOURCE
IPGOOD―SINK PGOOD Pin Sink Current VPGOOD = 0.4V 15 mA(max)
IPGOOD―LEAKA PGOOD Pin Leakage Current VPGOOD = 5V 50 nA
GE
ISHUTDOWN Shutdown Pin Current Shutdown Pin Pulled Low 2.2 μA
0.8/0.5 μA(min)
3.7/4.0 μA(max)
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Electrical Characteristics (continued)
Specifications with standard typeface are for TJ= 25°C, and those in boldface type apply over full Operating Temperature
Range. VIN = 10V unless otherwise specified.
Symbol Parameter Conditions Typical (1) Limit (2) Units
VSHUTDOWN Shutdown Pin Threshold Rising Edge 0.6 V
Voltage 0.3 V(min)
0.9 V(max)
TSD Thermal Shutdown 165 °C
Temperature
TSD_HYST Thermal Shutdown Hysteresis 25 °C
Temperature
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Typical Performance Characteristics
Efficiency vs Load Current (VIN = 5V, VOUT = 2.5V) lQvs VIN
Figure 3. Figure 4.
IQSD vs Input Voltage IQSD vs Junction Temperature
Figure 5. Figure 6.
Frequency vs Junction Temperature RSW(ON) vs Input Voltage
Figure 7. Figure 8.
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Typical Performance Characteristics (continued)
RSW(ON) vs Junction Temperature Current Limit vs Input Voltage (VOUT = 2.5V)
Figure 9. Figure 10.
Current Limit vs Junction Temperature (VOUT = 2.5V) Reference Voltage vs Junction Temperature
Figure 11. Figure 12.
Sleep Mode Threshold vs Output Voltage (VIN = 5V)
Figure 13.
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CONNECTION DIAGRAM
Figure 14. 16-Lead TSSOP (PW)
See Package Number PW0016A
PIN DESCRIPTIONS
Pin Name Function
1-2 SW Switched-node connection, which is connected with the source of the internal high-side MOSFET.
3-5 VIN Main power supply input pin. Connected to the drain of the high-side MOSFET.
6 VCB Bootstrap capacitor connection for high-side gate drive.
7 AVIN Input voltage for control and driver circuits.
8 SD(SS) Shutdown and Soft-start control pin. Pulling this pin below 0.3V shuts off the regulator. A capacitor
connected from this pin to ground provides a control ramp of the input current. Do not drive this pin
with an external source or erroneous operation may result.
9 FB Output voltage feedback input. Connected to the output voltage.
10 COMP Compensation network connection. Connected to the output of the voltage error amplifier.
11 PGOOD A constant monitor on the output voltage. PGOOD will go low if the output voltage exceeds 110% or
goes below 80% of its nominal.
12 LDELAY A capacitor between this pin to ground sets the delay from the output voltage reaches 80% of its
nominal to when the undervoltage latch protection is enabled and PGOOD pin goes low.
13 AGND Low-noise analog ground.
14-16 PGND Power ground.
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OPERATION
The LM2653 operates in a constant frequency (300 kHz), current-mode PWM for moderate to heavy loads; and it
automatically switches to hysteretic mode for light loads. In hysteretic mode, the switching frequency is reduced
to keep the efficiency high.
MAIN OPERATION
When the load current is higher than the sleep mode threshold, the part is always operating in PWM mode. At
the beginning of each switching cycle, the high-side switch is turned on, the current from the high-side switch is
sensed and compared with the output of the error amplifier (COMP pin). When the sensed current reaches the
COMP pin voltage level, the high-side switch is turned off; after 40 ns (deadtime), the low-side switch is turned
on. At the end of the switching cycle, the low-side switch is turned off; and the same cycle repeats.
The current of the top switch is sensed by a patented internal circuitry. This unique technique gets rid of the
external sense resistor, saves cost and size, and improves noise immunity of the sensed current. A feedforward
from the input voltage is added to reduce the variation of the current limit over the input voltage range.
When the load current decreases below the sleep mode theshold, the output voltage will rise slightly, this rise is
sensed by the hysteretic mode comparator which makes the part go into the hysteretic mode with both the high
and low side switches off. The output voltage starts to drop until it hits the low threshold of the hysteretic
comparator, and the part immediately goes back to the PWM operation. The output voltage keeps increasing
until it reaches the top hysteretic threshold, then both the high and low side switches turn off again, and th same
cycle repeats.
PROTECTIONS
The cycle-by-cycle current limit circuitry turns off the high-side MOSFET whenever the current in MOSFET
reaches 2A. A second level current limit is accomplished by the undervoltage protection: if the load pulls the
output voltage down below 80% of its nominal value, the undervoltage latch protection will wait for a period of
time (set by the capacitor at the LDELAY pin, see LDELAY CAPACITOR for more information). If the output
voltage is still below 80% of its nominal after the waiting period, the latch protection will be enabled. In the latch
protection mode, the low-side MOSFET is on and the high-side MOSFET is off. The latch protection will also be
enabled immediately whenever the output voltage exceeds the overvoltage threshold (110% of its nominal). Both
protections are disabled during start-up.(See SOFT-START CAPACITOR and LDELAY CAPACITOR for more
information.) Toggling the input supply voltage or the shutdown pin can reset the device from the latched
protection mode.
PGOOD FLAG
The PGOOD flag goes low whenever the overvoltage or undervoltage latch protection is enabled.
Design Procedure
This section presents guidelines for selecting external components.
INPUT CAPACITOR
A low ESR aluminum, tantalum, or ceramic capacitor is needed between the input pin and power ground. This
capacitor prevents large voltage transients from appearing at the input. The capacitor is selected based on the
RMS current and voltage requirements. The RMS current is given by:
(1)
The RMS current reaches its maximum (IOUT/2) when VIN equals 2VOUT. For an aluminum or ceramic capacitor,
the voltage rating should be at least 25% higher than the maximum input voltage. If a tantalum capacitor is used,
the voltage rating required is about twice the maximum input voltage. The tantalum capacitor should be surge
current tested by the manufacturer to prevent shorted by the inrush current. It is also recommended to put a
small ceramic capacitor (0.1 μF) between the input pin and ground pin to reduce high frequency spikes.
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INDUCTOR
The most critical parameters for the inductor are the inductance, peak current and the DC resistance. The
inductance is related to the peak-to-peak inductor ripple current, the input and the output voltages:
(2)
A higher value of ripple current reduces inductance, but increases the conductance loss, core loss, current stress
for the inductor and switch devices. It also requires a bigger output capacitor for the same output voltage ripple
requirement. A reasonable value is setting the ripple current to be 30% of the DC output current. Since the ripple
current increases with the input voltage, the maximum input voltage is always used to determine the inductance.
The DC resistance of the inductor is a key parameter for the efficiency. Lower DC resistance is available with a
bigger winding area. A good tradeoff between the efficiency and the core size is letting the inductor copper loss
equal 2% of the output power.
OUTPUT CAPACITOR
The selection of COUT is driven by the maximum allowable output voltage ripple. The output ripple in the constant
frequency, PWM mode is approximated by:
(3)
The ESR term usually plays the dominant role in determining the voltage ripple. A low ESR aluminum electrolytic
or tantalum capacitor (such as Nichicon PL series, Sanyo OS-CON, Sprague 593D, 594D, AVX TPS, and CDE
polymer aluminum) is recommended. An electrolytic capacitor is not recommended for temperatures below
−25°C since its ESR rises dramatically at cold temperature. A tantalum capacitor has a much better ESR
specification at cold temperature and is preferred for low temperature applications.
The output voltage ripple in constant frequency mode has to be less than the sleep mode voltage hysteresis to
avoid entering the sleep mode at full load:
VRIPPLE < 20mV * VOUT /VFB (4)
BOOST CAPACITOR
A 0.1 μF ceramic capacitor is recommended for the boost capacitor. The typical voltage across the boost
capacitor is 6.7V.
SOFT-START CAPACITOR
A soft-start capacitor is used to provide the soft-start feature. When the input voltage is first applied, or when the
SD(SS) pin is allowed to go high, the soft-start capacitor is charged by a current source (approximately 2 μA).
When the SD(SS) pin voltage reaches 0.6V (shutdown threshold), the internal regulator circuitry starts to
operate. The current charging the soft-start capacitor increases from 2 μA to approximately 10 μA. With the
SD(SS) pin voltage between 0.6V and 1.3V, the level of the current limit is zero, which means the output voltage
is still zero. When the SD(SS) pin voltage increases beyond 1.3V, the current limit starts to increase. The switch
duty cycle, which is controlled by the level of the current limit, starts with narrow pulses and gradually gets wider.
At the same time, the output voltage of the converter increases towards the nominal value, which brings down
the output voltage of the error amplifier. When the output of the error amplifier is less than the current limit
voltage, it takes over the control of the duty cycle. The converter enters the normal current-mode PWM
operation. The SD(SS) pin voltage is eventually charged up to about 2V.
The soft-start time can be estimated as:
TSS = CSS * 0.6V/2 μA + CSS * (2V−0.6V)/10 μA (5)
During start-up, the internal circuit is monitoring the soft-start voltage. When the softstart voltage reaches 2V, the
undervoltage and overvoltage protections are enabled.
If the output voltage doesn't rise above 80% of the normal value before the soft-start reaches 2V. The
undervoltage protection will kick in and shut the device down. You can avoid this by either increasing the value of
the soft-start capacitor, or using a LDELAY capacitor.
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LDELAY CAPACITOR
As mentioned in the Operation section, the LDELAY capacitor sets the time delay between the output voltage
goes below 80% of its nominal value and the undervoltage latch protection is enabled.
Charging the CDELAY by a 5 μA current source up to 2V sets the delay time. Therefore, TDELAY = CDELAY *
2V/5μA.
The undervoltage protection is disabled by tying the LDELAY pin to the ground.
R1and R2(PROGRAMMING OUTPUT VOLTAGE)
Use the following formula to select the appropriate resistor values:
VOUT = VREF(1 + R1/R2)
where
• VREF = 1.238V (6)
Select resistors between 10kΩand 100kΩ. (1% or higher accuracy metal film resistors for R1and R2.)
COMPENSATION COMPONENTS
In the control to output transfer function, the first pole Fp1 can be estimated as 1/(2πROUTCOUT); The ESR zero
Fz1 of the output capacitor is 1/(2πESRCOUT); Also, there is a high frequency pole Fp2 in the range of 45kHz to
150kHz:
Fp2 = Fs/(πn(1−D))
where
• D = VOUT/VIN
• n = 1+0.348L/(VIN−VOUT) (L is in µHs and VIN and VOUT in volts) (7)
The total loop gain G is approximately 500/IOUT where IOUT is in amperes.
A Gm amplifier is used inside the LM2653. The output resistor Roof the Gm amplifier is about 80kΩ. Cc1 and RC
together with Rogive a lag compensation to roll off the gain:
Fpc1 = 1/(2πCc1(Ro+Rc)), Fzc1 = 1/2πCc1Rc. (8)
In some applications, the ESR zero Fz1 cannot be cancelled by Fp2. Then, Cc2 is needed to introduce Fpc2 to
cancel the ESR zero, Fp2 = 1/(2πCc2Ro‖Rc).
The rule of thumb is to have more than 45° phase margin at the crossover frequency (G=1).
If COUT is higher than 68µF, Cc1 = 2.2nF, and Rc= 15KΩare good choices for most applications. If the ESR zero
is too low to be cancelled by Fp2, add Cc2.
If the transient response to a step load is important, choose RCto be higher than 10kΩ.
EXTERNAL SCHOTTKY DIODE
A Schottky diode D1is recommended to prevent the intrinsic body diode of the low-side MOSFET from
conducting during the deadtime in PWM operation and hysteretic mode when both MOSFETs are off. If the body
diode turns on, there is extra power dissipation in the body diode because of the reverse-recovery current and
higher forward voltage; the high-side MOSFET also has more switching loss since the negative diode reverse-
recovery current appears as the high-side MOSFET turn-on current in addition to the load current. These losses
degrade the efficiency by 1-2%. The improved efficiency and noise immunity with the Schottky diode become
more obvious with increasing input voltage and load current.
The breakdown voltage rating of D1is preferred to be 25% higher than the maximum input voltage. Since D1is
only on for a short period of time, the average current rating for D1only requires being higher than 30% of the
maximum output current. It is important to place D1very close to the drain and source of the low-side MOSFET,
extra parasitic inductance in the parallel loop will slow the turn-on of D1and direct the current through the body
diode of the low-side MOSFET.
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PCB Layout Considerations
Layout is critical to reduce noises and ensure specified performance. The important guidelines are listed as
follows:
1. Minimize the parasitic inductance in the loop of input capacitors and the internal MOSFETs by connecting the
input capacitors to VIN and PGND pins with short and wide traces. This is important because the rapidly
switching current, together with wiring inductance can generate large voltage spikes that may result in noise
problems.
2. Minimize the trace from the center of the output resistor divider to the FB pin and keep it away from noise
sources to avoid noise pick up. For applications require tight regulation at the output, a dedicated sense
trace (separated from the power trace) is recommended to connect the top of the resistor divider to the
output.
3. If the Schottky diode D1is used, minimize the traces connecting D1to SW and PGND pins.
Figure 16. Schematic for the Typical Board Layout
Typical PC Board Layout: (2X Size)
Figure 17. Component Placement Guide
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REVISION HISTORY
Changes from Revision D (April 2013) to Revision E Page
• Changed layout of National Data Sheet to TI format .......................................................................................................... 13
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM2653MTC-ADJ NRND TSSOP PW 16 92 TBD Call TI Call TI -40 to 125 2653MT
C-ADJ
LM2653MTC-ADJ/NOPB ACTIVE TSSOP PW 16 92 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 2653MT
C-ADJ
LM2653MTCX-ADJ/NOPB ACTIVE TSSOP PW 16 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 2653MT
C-ADJ
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM2653MTCX-ADJ/NOPB TSSOP PW 16 2500 330.0 12.4 6.95 5.6 1.6 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 6-Nov-2015
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM2653MTCX-ADJ/NOPB TSSOP PW 16 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 6-Nov-2015
Pack Materials-Page 2
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