TSOP5700
Document Number 82166
Rev. 1.9, 22-May-07
Vishay Semiconductors
www.vishay.com
299
16797
1234
IR Receiver for High Data Rate PCM at 455 kHz
Description
The TSOP5700 is a miniaturized SMD IR receiver for
infrared remote control and IR data transmission. PIN
diode and preamplifier are assembled on lead frame,
the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with high data rates and long distances.
This component has not been qualified according to
automotive specifications.
Features
Photo detector and preamplifier in one
package
Internal Bandfilter for PCM frequency
Internal shielding against electrical field
disturbance
TTL and CMOS compatibility
Output active low
Small size package
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Special Features
Data rate 20 kbit/s
Supply voltage 2.7 - 5.5 V
Short settling time after power on
High envelope duty cycle can be received
Enhanced immunity against disturbance from
energy saving lamps
Taping available for topview and sideview
assembly
Mechanical Data
Pinning:
1 = GND, 2 = NC, 3 = OUT, 4 = VS
Block Diagram Application Circuit
10 kΩ
3
1
VS
OUT
Demo-
GND
Pass
AGCInput
PIN
Band dulator
Control Circuit
4
16840
C1
=
4.7 µF
TSOPxxxx
OUT
GND
Circuit
µC
R1= 47 Ω
+ VS
GN D
Transmitte r
with
TSHFxxxx V
S
R
1 +C
1 recommended to suppress power supply
disturbances.
V
O
R2
>=
1 kΩ
R
2 optional for improved pulse forming.
16843
e3
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Document Number 82166
Rev. 1.9, 22-May-07
TSOP5700
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage Pin 4 VS- 0.3 to + 6.0 V
Voltage at output to supply Pin 3 VS - VO- 0.3 to
(VS + 0.3)
V
Supply Current Pin 4 IS5mA
Output Voltage Pin 3 VO- 0.3 to + 6.0 V
Output Current Pin 3 IO15 mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg - 40 to + 85 °C
Operating Temperature Range Tamb - 25 to + 85 °C
Power Consumption Tamb 85 °C Ptot 50 mW
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current (Pin 4) Dark ambient ISD 2.0 2.7 mA
Ev = 40 klx, sunlight ISH 2.3 mA
Supply Voltage (Pin 4) VS2.7 5 5.5 V
Transmission Distance λp = 870 nm,
IR Diode TSHF5400,
IF = 300 mA
dmax 15 m
λp = 950 nm,
IR Diode TSAL6400,
IF = 300 mA
dmax 9m
Threshold Irradiance λp = 870 nm,
optical test signal of fig. 1
Ee min 1.5 2.5 mW/m2
Maximum Irradiance Optical test signal of fig. 1 Ee max 30 W/m2
Output Voltage Low (Pin 3) 1 kΩ external pull up resistor VQL 100 mV
Output Voltage High (Pin 3) No external pull-up resistor,
test signal see fig. 1
VQH VS - 0.25 V
Bandpass filter quality Q 10
Out-Pulse width tolerance Optical test signal of fig. 1,
2.5 mW/m2 Ee 30 W/m2
Δtpo - 15 + 5 + 15 µs
Delay time of output pulse Optical test signal of fig. 1,
Ee > 2.5 mW/m2
tdon 15 36 µs
Receiver start up time Valid data after power on tV50 µs
Falling time Leading edge of output pulse tf0.4 µs
Rise time No external pull up resistor tr12 µs
1 kΩ external pull up resistor tr1.2 µs
Directivity Angle of half transmission
distance
ϕ1/2 ± 50 deg
TSOP5700
Document Number 82166
Rev. 1.9, 22-May-07
Vishay Semiconductors
www.vishay.com
301
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Output Function
Figure 2. Output Fucntion (including jitter)
Figure 3. Output Pulse Diagram (tdon, tpo)
2.2 µs
E
e
V
Q
V
QH
V
QL
t
pi
= 22 µs
t
po
t
don
> 48.6 µs (min. duty)
t
f
t
Optical Test Signal
(f = 455 kHz,
10cycles/burst)
Output Signal of TSOP5700
t
t
t
po
= t
pi
±
15 µs
50 %
90 %
10 %
19811
E
e
V
Q
V
QH
V
QL
t
pi
= 22 µs
t
po
t
don
Optical Test Signal
(IR diode TSHF5400, λ
p
= 880 nm, IF= 300 mA, f = 455 kHz,
10cycles/burst)
Output Signal of TSOP5700
t
t
j
tdon
jitter of leading edge j
tpo
jitter of output pulse
width
19812
0
5
10
15
20
25
30
35
0.1
E
e
- Irradiance (mW/m²)
16790
don
t , t - Output Pulse Length (µs)
Output pulse width - t
po
Delay time - t
don
1 10 100 1000 10000 100000
N = 10 cycles/burst
po
Figure 4. Jitter of Output Pulse
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
0
5
10
15
20
25
30
0.1
Ee- Irradiance (mW/m²)
16791
j
N = 10 cycles/burst
Jitter - tdon
Jitter - tpo
1 10 100 1000 10000 100000
tdon, tpo
j - Jitter of Output Pulse (µs)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
300 350 400 450 500 550 600
f - Frequency (kHz)
16751
/Ee min e rel
E - Responsitivity
0
2
4
6
8
10
12
14
0.1 1.0 10 100
E - DC Irradiance (W/m²)
16558
emin
E - Threshold Irradiance (mW/m²)
Ambient, λ= 950 nm
Correlation with ambient light sources:
10 W/m²
1.4 klx
(Std.illum.A, T = 2855 K)
10 W/m²
8.2 klx
(Daylight, T = 5900 K)
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Document Number 82166
Rev. 1.9, 22-May-07
TSOP5700
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage
Figure 8. Rel. Sensitivity vs. Burstlength
Figure 9. Supply Current vs. Ambient Temperature
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
25
VS- Supply Voltage (V)
16559
Sensitivity in dark ambient
emin
E - Threshold Irradiance (mW/m²)
36
4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
N-Burstlength (carriercycles/burst)
16788
e min
E - Relative Sensitivity
26221814 2824201612108
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
5 1525354555657585
Tamb- Ambient Temperature (°C)
16754
I- Supply Current (mA)
s
VS= 5.5 V
VS= 2.7 V
- 5- 15- 25
Figure 10. Relative Spectral Sensitivity vs. Wavelength
Figure 11. Directivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 800 850 900 950 1000 10501100 1150
λ- Wavelength (nm)
16789
S ( ) - Relative Spectral Sensitivity
rel
λ
16801
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
30°
10° 20°
40°
50°
60°
70°
8
1.0
0.8
0.7
drel - Relative Transmission Distance
TSOP5700
Document Number 82166
Rev. 1.9, 22-May-07
Vishay Semiconductors
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303
Recommendation for Suitable Data Formats
The circuit of the TSOP5700 is designed so that
disturbance signals are identified and unwated output
pulses due to noise or disturbances are avoided. A
bandpass filter, an automatic gain control and an
integrator stage is used to suppress such
disturbances. The distinguishing marks between data
signal and disturbance are carrier frequency, burst
length and the envelope duty cycle.
The data signal should fulfill the following conditions:
• The carrier frequency should be close to 455 kHz.
• The burstlength should be at least 22 µs (10 cycles
of the carrier signal) and shorter than 500 µs.
The separation time between two consecutive
bursts should be at least 26 µs.
• If the data bursts are longer than 500 µs then the
envelope duty cycle is limited to 25 %
• The duty cycle of the carrier signal (455 kHz) may be
between 50 % (1.1 µs pulses) and 10 % (0.2 µs
pulses). The lower duty cycle may help to save
battery power.
Package Dimensions in millimeters
16776
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304
Document Number 82166
Rev. 1.9, 22-May-07
TSOP5700
Vishay Semiconductors
Assembly Instructions
Reflow Soldering
Reflow soldering must be done within 72 hours
while stored under a max. temperature of 30 °C, 60 %
RH after opening the dry pack envelope.
Set the furnace temperatures for pre-heating and
heating in accordance with the reflow temperature
profile as shown in the diagram. Excercise extreme
care to keep the maximum temperature below
260 °C. The temperature shown in the profile means
the temperature at the device surface. Since there is
a temperature difference between the component and
the circuit board, it should be verified that the
temperature of the device is accurately being
measured.
Handling after reflow should be done only after the
work surface has been cooled off.
Manual Soldering
Use a soldering iron of 25 W or less. Adjust the
temperature of the soldering iron below 300 °C.
Finish soldering within three seconds.
Handle products only after the temperature has
cooled off.
Vishay Lead (Pb)-free Reflow Solder
Profile
Figure 12. Directivity
0
50
100
150
200
250
300
0 50 100 150 200 250 300
t (s)
T (°C)
255 °C
240 °C 245 °C
max. 260 °C
m
a
x. 12
0
s
max. 100 s
217 °C
max. 20 s
max. Ramp Up 3 °C/s max. Ramp Down 6 °C/s
max. 2 cycles allowed
19800
TSOP5700
Document Number 82166
Rev. 1.9, 22-May-07
Vishay Semiconductors
www.vishay.com
305
Taping Version TSOP..TT Dimensions in millimeteres
16584
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306
Document Number 82166
Rev. 1.9, 22-May-07
TSOP5700
Vishay Semiconductors
Taping Version TSOP..TR Dimensions in millimeteres
16585
TSOP5700
Document Number 82166
Rev. 1.9, 22-May-07
Vishay Semiconductors
www.vishay.com
307
Reel Dimensions in millimeters
16734
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308
Document Number 82166
Rev. 1.9, 22-May-07
TSOP5700
Vishay Semiconductors
Leader and Trailer Dimensions in millimeters
Cover Tape Peel Strength
According to DIN EN 60286-3
0.1 to 1.3 N
300 ± 10 mm/min
165° - 180° peel angle
Label
Standard bar code labels for finished goods
The standard bar code labels are product labels and
used for identification of goods. The finished goods
are packed in final packing area. The standard
packing units are labeled with standard bar code
labels before transported as finished goods to
warehouses. The labels are on each packing unit and
contain Vishay Semiconductor GmbH specific data.
Trailer Leader
no devices no devices
min. 200 min. 400
StartEnd
devices
96 11818
TSOP5700
Document Number 82166
Rev. 1.9, 22-May-07
Vishay Semiconductors
www.vishay.com
309
Dry Packing
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during
transportation and storage.
Final Packing
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping
purposes.
Item-Description
Item-Number
Selection-Code
LOT-/Serial-Number
Data-Code
Plant-Code
Quantity
Accepted by:
Packed by:
Mixed Code Indicator
Origin
INO
-
BATCH
SEL
COD
PTC
QTY
ACC
PCK
MIXED CODE
xxxxxxx+
18
8
3
10
3 (YWW)
2
8
-
-
-
Company Logo
Plain Writing Abbreviation Length
Item-Number
Sequence-Number
Plant-Code
Quantity
Total Length
N
2
3
8
21
Long Bar Code Top Length
N
X
N
-
Selection-Code
Batch-Number
Data-Code
Filter
Total Length
X
3
10
1
17
Short Bar Code Bottom Length
N
X
-
-
16942
3
8
Type
Type
Vishay Semiconductor GmbH standard bar code product label (finished goods)
Aluminum bag
Label
Reel
15973
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310
Document Number 82166
Rev. 1.9, 22-May-07
TSOP5700
Vishay Semiconductors
Recommended Method of Storage
Dry box storage is recommended as soon as the
aluminum bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity 60 % RH max.
After more than 72 hours under these conditions
moisture content will be too high for reflow soldering.
In case of moisture absorption, the devices will
recover to the former condition by drying under the
following condition:
192 hours at 40 °C + 5 °C/- 0 °C and < 5 % RH
(dry air/nitrogen) or
96 hours at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 hours at 125 °C + 5 °C not suitable for reel or
tubes.
An EIA JEDEC Standard JESD22-A112 Level 4 label
is included on all dry bags.
Example of JESD22-A112 Level 4 label
ESD Precaution
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the Antistatic
Shielding Bag. Electro-Static Sensitive Devices
warning labels are on the packaging.
Vishay Semiconductors Standard
Bar-Code Labels
The Vishay Semiconductors standard bar-code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Telefunken
specific data.
16943
16962
TSOP5700
Document Number 82166
Rev. 1.9, 22-May-07
Vishay Semiconductors
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311
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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