F1235C - OSRAM Opto Semiconductors

F 1235B

F 1235C

GaAs-Infrarot-Lumineszenzdiode (950 nm, 200 µm Kantenlänge)

GaAs Infrared Emitti ng Diode (950 nm, 8 mil)

Vorläufige Daten / Preliminary Data

2003-04-10 1

Wesentliche Merkmale

• Chipgröße 200 x 200 µm2

• Emissionswellenlänge: 950 nm

• GaAs-LED mit sehr hohem Wirkungsgrad

• Gute Linearität (Ie = f [IF]) bei hohen Strömen

• Gleichstrom- oder Impulsbetrieb möglich

• Hohe Zuverlässigkeit

Anwendungen

• Optokoppler

• Industrieelektronik

• Optokoppler

• Datenübertragung

• Positionsüberwachung

• Barcode-Leser

• Automobiltechnik

• Sensorik

• Alarm- und Sicherungssysteme

• IR-Freiraumübertragung

Typ

Type Bestellnummer

Ordering Code Beschreibung

Description

F 1235B Q65110A0694 Infrarot emittierender Chip, Oberseite Anodenanschluß,

Rückseite AuGe-Eutektikum,

Infrared emitting die, top side anode connection, backside

AuGe-eutecticum

F 1235C on request Infrarot emittierender Chip, Oberseite Anodenanschluß,

Rückseite Au-Legierung.

Infrared emitting die, top side anode connection, backside

Au-alloy

Features

• Chip size 200 x 200 µm2

• Peak wavelength: 950 nm

• Very highly efficient GaAs LED

• Good linearity (Ie = f [IF]) at high currents

• DC or pulsed operations are possible

• High reliability

Applications

• Optocoupler

• Industrial electronics

• Optocoupler

• Data transmission

• Position sensing

• Barcode reader

• Automotive technology

• Sensor technology

• Alarm and safety equipment

• IR free air transmission

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F 1235B F 1235C

Elektrische Werte (TA = 25 °C)

Electrical values1) (TA = 25 °C)

Bezeichnung

Parameter Symbol

Symbol Wert

Value2) Einheit

Unit

min. typ. max.

Emissionswellenlänge

Peak wavelength

IF = 10 mA

λpeak 950 nm

Spektrale Bandbreite bei 50% von Imax,

Spectral bandwidth at 50% of Imax

IF = 10 mA

∆λ 55 nm

Schaltzeiten, Ie von 10% auf 90% und von 90% auf

10%, bei IF = 100 mA, RL = 50 Ω

Switching times, Ie from 10% to 90% and from 90%

to 10%, IF = 100 mA, RL = 50 Ω

tr, tf0.4/0.3 µs

Sperrspannung

Reverse voltage

IR = 1µA

VR5V

Durchlaβspannung

Forward voltage

IF = 60 mA

VF1.45 1.65 V

Strahlungsleistung

Radiant Power3)

IF = 20 mA

Φe1.2 mW

Photostrom (Spezifikationsparameter)

Photocurrent (specified parameter)

IF = 10 mA

Ie0.045 a.u.

1) Measurement l i mit s d e scribe actual set t in gs an d d o not include measuremen t unce r ta in ti es. Each waf er a nd f ragment

of a wafer is subj ect to final testi ng. The wafer o r its pieces are i ndividually at tached on foils (ri ngs). Sample chips a re

picked from each foi l and pla ced on a sp ecial carri er for measuremen t purpo ses. The sampli ng densi ty is one chip p er

2 cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a sample

fails in that measurement, an area of 0,5 cm² around each fail ed sample is marked by pen. All el. values are referenced

to the vendor's measurement system (correlation to customer product(s) is required)

2) Typical (re fere d to as ty p.) dat a a re def i ned as l on g- te rm production mean values and ar e onl y given for informa tion .

This is no t a specified value

3) Radiant power is measured on TO-18 header in integrating sphere.

F 1235B F 1235C

2003-04-10 3

Mechanische Werte

Mechanical values

Bezeichnung

Parameter Symbol

Symbol Wert

Value1) Einheit

Unit

min. typ. max.

Chipkantenlänge (x-Richtun g)

Length of chip edge (x-direction) Lx0.18 0.2 0.22 mm

Chipkantenlänge (y-Richtun g)

Length of chip edge (y-direction) Ly0.18 0.2 0.22 mm

Durchmesser des Wafers

Diameter of the wafer D100 mm

Chiphöhe

Die height H185 205 225 µm

Bondpaddurchmesser

Diameter of bondpad d125 µm

Weitere Informationen

Additional information2)

Vorderseitenmetallisierung

Metallization frontside Aluminium

Aluminum

Rückseitenmetallisierung

Metallization backside AuGe-Eutektikum/AuGe-eutectics (F1235B)

Au-Legierung/Au-alloy (F1235C)

Trennverfahren

Dicing Sägen

Sawing

Verbindung Chip - Träger

Die bonding Eutectic bonding/Legieren (F1235B)

Glueing, Kleben(F1235C)

1) Typical (ref ered t o a s typ.) d at a are def in ed a s long-term pro duc ti on mean v al ues a nd a r e onl y g iv en f or inf orma tion.

This is no t a specified value

2) All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection

A63501-Q0013-N001-*-76G3:

The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The

visual inspec tion of chip backs ide is p erformed by e ye fo r 100% of the area of ea ch wafer. I f decisio ns (goo d/bad) a re

not possibl e additional a stereo microscop e with incident l ight with 40x-80 x magnificatio n is used. Areas grea ter than

¼ cm² which have an amount of more than 3% failed dies will be marked manually with pen. The marked area from

backside will be transfered to frontside and will be also marked manually with pen. The visual inspection of chip

frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of

each wafer. Areas greater than 1 cm² which have an amount of more than 50% failed dies and areas greater than 2

cm² which ha ve an amount of more th an 25% failed dies will be marked. The quality inspection (final visual inspection)

is performed by production. An additional visual inspection step as special release procedure by QM after the final

visual inspection is not installed.

F 1235B F 1235C

2003-04-10 4

Grenzwert1)

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Maximaler Betriebstemperaturbereich

Maximum Operating temperature range Top -40...+85 °C

Maximaler Lagertemperaturbereich

Maximum storage temperature range Tstg -40...+85 °C

Maximaler Durchlaßstrom

Maximum forward current IF30 mA

Maximaler Stoßstrom

Maximum surge current

tp = 10 µs, D = 0.005

IS0.5 A

Maximale Sperrschichttemperatur

Maximum junction temperature Tj125 °C

1)Maximum ratings are strongly package dependent and may differ between different packages. The values given

represent the chip in a TO-18 package.

F 1235B F 1235C

2003-04-10 5

Relati ve Sp ectral Emi ssi o n 1) IFrel= f (λ)

TA = 25 °C

Forward C urrent1)

IF= f (VF), Single pulse, tp = 20 ms, TA = 25 °C

1) Based on typ.(see page 2, footnote 2 for explanation)

data measured in OSRAM Opto Semiconductor’s

TOPLED® package.

Radiant Intensity1) Ie/Ie(100mA) = f (IF)

TA = 25 °C, single pulse: tp = 20 µs

OHR01938

rel

0880 920 960 1000

1060

100

OHF00367

-2

12340.5 1.5 2.5 V

-1

OHF00369

-1

10 10

-3

-2

-1

e (100 mA)

2003-04-10 6

F 1235B F 1235C

Maßzeichnung

Chip Outlines

Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as

follows: mm (inch).

Published by OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform ation gen erally descri bes the type of compone nt and shall not be considered as assured ch aracteristic s or

detaile d sp ec if ic at ion.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substa nces. For info rm at ion on the types in qu es t ion please contact our sales organizatio n.

Handling and Storage Conditions:

The hermetically sealed shipment lot shall be opened under temperature and moisture controlled cleanroom

environment only. Customer has to follow the according rules for disposition of material that can be hazardous for

humans and environment.

Packing

Chips are placed on a blue f oil, wh ic h is fix ed in a yellow frame of 5” diameter.

For shipment the wafers of a shipment lot are arranged to stacks. The top and bottom of the stack is covered by a

dummy disk to protect the top and bottom wafer from damage. The whole package is fixed by rubber strings and

hermetically sealed in a plastic bag for storage and shipment. Please use the recycling operators known to you. We can

also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is

sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are

not oblig ed t o ac c ept , we shall have to invoic e y ou f or any costs incu rred.

Further Conditions:

If not otherwise arranged, the “General Conditions for the supply of products and services of the electrical and

electronics industry” apply for any shipment, just as the Supplier Addendum " Chip business" to the “General Conditions

for the supply of products and services of the electrical and electronics industry”. If this document is not familiar to you,

please request it at our nearest sales off ic e.

Com pon en ts used in life-support d evi ces or systems must be ex pressly autho rized by us for su ch purpose!

Critical components2), may only be used in life-support devices or systems3) with the express written approval of

OSRAM OS.

1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.

This is no t a specified v alue.

2)A critical comp onent is a component used in a life-supp ort device or system whose fail ure can reasonably be expec ted to

cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

3)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

GMOY6179

0.205 (0.0081)

0.12 (0.0047)

p-contact

n-contact

0.2 (0.0079)