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©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH60N60SFD Rev. 1.4
FGH60N60SFD — 600 V, 60 A Field Stop IGBT
March 2015
Absolute Maximum Ratings
Notes:
1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
ICCollector Current @ TC = 25oC120 A
Collector Current @ TC = 100oC60 A
ICM (1) Pulsed Collector Current @ TC = 25oC 180 A
PDMaximum Power Dissipation @ TC = 25oC378 W
Maximum Power Dissipation @ TC = 100oC151 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.33 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case - 1.1 oC/W
RθJA Thermal Resistance, Junction to Ambient - 40 oC/W
G
E
C
ECG
COLLECTOR
(FLANGE)
FGH60N60SFD
600 V, 60 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A
• High Input Impedance
• Fast Switching
•RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low condu ction and switch-
ing losses are essential.
FGH60N60SFD — 600 V, 60 A Field Stop IGBT
©2008 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGH60N60SFD Rev. 1.4
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH60N60SFDTU FGH60N60SFD TO-247 Tube N/A N/A 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA 600 - - V
ΔBVCES
/ ΔTJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 250 μA-0.4-V/
oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 μA, VCE = VGE 4.0 5.0 6.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V -2.32.9V
IC = 60 A, VGE = 15 V,
TC = 125oC-2.5- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 2820 - pF
Coes Output Capacitance - 350 - pF
Cres Reverse Transfer Capacitance - 140 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
-22-ns
trRise Time - 42 - ns
td(off) Turn-Off Delay Time - 134 - ns
tfFall Time - 31 62 ns
Eon Turn-On Switching Loss - 1.79 - mJ
Eoff Turn-Off Switching Loss - 0.67 - mJ
Ets Total Switching Loss - 2.46 - mJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
-22-ns
trRise Time - 44 - ns
td(off) Turn-Off Delay Time - 144 - ns
tfFall Time - 43 - ns
Eon Turn-On Switching Loss - 1.88 - mJ
Eoff Turn-Off Switching Loss - 1.0 - mJ
Ets Total Switching Loss - 2.88 - mJ
QgTotal Gate Charge VCE = 400 V, IC = 60 A,
VGE = 15 V
- 198 - nC
Qge Gate to Emitter Charge - 22 - nC
Qgc Gate to Collector Charge - 106 - nC
FGH60N60SFD — 600 V, 60 A Field Stop IGBT
©2008 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGH60N60SFD Rev. 1.4
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 30 A TC = 25oC- 2.0 2.6V
TC = 125oC- 1.8 -
trr Diode Reverse Recovery Time
IF = 30 A, diF/dt = 200 A/μs
TC = 25oC- 47 - ns
TC = 125oC - 179 -
Qrr Diode Reverse Recovery Charge TC = 25oC- 83 - nC
TC = 125oC - 567 -
FGH60N60SFD — 600 V, 60 A Field Stop IGBT
©2008 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGH60N60SFD Rev. 1.4
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
02468
0
30
60
90
120
150
180
20V
TC = 25oC
15V
12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
02468
0
30
60
90
120
150
180
20V
TC = 125oC
15V
12V 10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
30
60
90
120
150
180
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
30
60
90
120
150
180 Common Em itter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125
1.0
1.5
2.0
2.5
3.0
3.5
4.0
120A
60A
IC = 30A
Comm on E m itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-EmitterCase Temperature, TC [oC]
0 4 8 121620
0
4
8
12
16
20
IC = 30A
60A
120A
Common Em itter
TC = -40oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itter Vo ltag e , VGE [V]
FGH60N60SFD — 600 V, 60 A Field Stop IGBT
©2008 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGH60N60SFD Rev. 1.4
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA Characteristics
0 4 8 121620
0
4
8
12
16
20
IC = 30A
60A
120A
Common Em itter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itter Vo ltag e , VGE [V]
0 4 8 121620
0
4
8
12
16
20
120A
IC = 30A
60A
Comm on E m itter
TC = 125oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V ]
0 50 100 150 200
0
3
6
9
12
15 Comm on Emitter
TC = 25oC
300V
200V
VCC = 100V
Gate-Emitter Voltage, VGE [V]
Ga te Charg e , Qg [nC]
1 10 100 1000
1
10
100
300
Safe Operating Area
VGE = 15V, TC = 125oC
Collector Curre nt, IC [A]
Collector-Emitter Voltage, VCE [V]
1 10 100 1000
0.01
0.1
1
10
100
500
Single Nonre pe titive
Pulse TC = 2 5oC
Curves must be derated
linearly with incre as e
in temperature
1ms
10 ms
DC
10μs
100μs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
FGH60N60SFD — 600 V, 60 A Field Stop IGBT
©2008 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGH60N60SFD Rev. 1.4
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 17. Switching Loss vs Gate Resista nce Figure 18. Switching Loss vs Collector Current
0 1020304050
10
100
300
Common Emitter
VCC = 400V , VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
0 1020304050
10
100
1000
Co mmon Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
6000
0 20406080100120
10
100
500 Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
0 20406080100120
10
100
C o mm o n E mitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
0 1020304050
1
20
0.5
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
10
0 20406080100120
0.1
1
10
30 Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
FGH60N60SFD — 600 V, 60 A Field Stop IGBT
©2008 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGH60N60SFD Rev. 1.4
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Reverse Current
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Figure 23. Transient Thermal Impedance of IGBT
01234
1
10
100
TJ = 75oC
TJ = 25oC
200
TC = 25oC
TC = 125oC
TJ = 125oC
Forward Voltage, VF [V]
Forward Current, IF [A]
0 200 400 600
0.01
0.1
1
10
100
500
TC = 75oC
TC = 25oC
TC = 125oC
Reverse Current , IR [μA]
Reverse Voltage, VR [V]
5204060
30
40
50
60
200A/μs
di/dt = 100A/μs
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
5204060
40
60
80
10
0
TC = 25oC
200A/μs
diF/dt = 100A /μs
Stored Recovery Charge, Qrr [nC]
Fo rw ard C urre nt, I
F
[
A
]
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
0.2
0.5
0.1
0.05
0.01
0.02
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
t1
PDM
t2
15.87
15.37
E
20.82
20.32
E
3.93
3.69
E
16.25
15.75
E
1.60
5.56
11.12
5.20
4.96
1.35
1.17
5.58
5.34
E
4.13
3.53
2.77
2.43
1.87
1.53
(2X)
0.254
M
B A
M
0.254
M
B A
M
A
4.82
4.58
E
0.71
0.51
2.66
2.29
B
12.81
E
3.65
3.51
E
6.85
6.61
13.08 MIN
1.35
0.51
1
3
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E
DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247A03_REV04
1 32
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