NPT35015
Page 1 NDS-005 Rev 5, April 2013
NPT35015
FEATURES
• Optimized for CW, Pulsed, WiMAX, and other ap-
plications from 3300 - 3800 MHz
• 18W P3dB CW Power
• 25W P3dB peak envelope power
• 1.7W linear power @ 2% EVM for single carrier
OFDM, 10.3dB peak/average, 10.3dB @ 0.01%
probability on CCDF, 10.5dB gain, 18%
drain efciency
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
3300 – 3800 MHz
18 Watt, 28 Volt
GaN HEMT
RF Specications (CW): VDS = 28V, IDQ = 200mA, Frequency = 3500MHz, TC = 25°C, Measured in Load Pull System
Typical 2-Tone Performance: VDS = 28V, IDQ = 200mA, Frequency = 3500MHz, Tone spacing = 1MHz, TC = 25°C.
Measured in Nitronex Test Fixture
Symbol Parameter Min Typ Max Units
P3dB,PEP Peak Envelope Power at 3dB Compression 14 18 - W
P1dB,PEP Peak Envelope Power at 1dB Compression - 10 - W
GSS Small Signal Gain 10 11 -dB
hPeak Drain Efciency at POUT = P3dB 43 48 - %
Typical OFDM Performance: VDS = 28V, IDQ = 200mA, POUT, AVG = 1.7W, single carrier OFDM waveform 64-QAM
3/4, 8 burst, 20ms frame, 15ms frame data, 3.5MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 3300 to 3800MHz. TC=25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol Parameter Typ Units
GPPower Gain 10.5 dB
hDrain Efciency 18 %
EVM Error Vector Magnitude 2.0 %
IRL Input Return Loss 10 dB
Symbol Parameter Typ Units
P3dB Average Output Power at 3dB Gain Compression 18 W
P3dB,Pulsed Pulsed Output Power at 3dB Gain Compression 20 W
P1dB,Pulsed Pulsed Output Power at 1dB Gain Compression 15 W
Gallium Nitride 28V, 18W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
NPT35015
Page 2 NDS-005 Rev 5, April 2013
NPT35015
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V) - - 4 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 8mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 200mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2V, ID = 60mA) -0.45 0.50 W
ID
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2V)
-5.0 - A
Symbol Parameter Max Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage -10 to 3 V
PTTotal Device Power Dissipation (Derated above 25°C) 28 W
qJC Thermal Resistance (Junction-to-Case) 6.25 °C/W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200 °C
HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>250V)
MM Machine Model ESD Rating (per JESD22-A115) M1 (>50V)
DC Specications: TC = 25°C
NPT35015
Page 3 NDS-005 Rev 5, April 2013
NPT35015
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Table 1: Optimum Source and Load Impedances for OFDM Linearity, VDS = 28V, IDQ = 200mA
Frequency
(MHz) ZS (W)ZL (W) POUT (W) Gain (dB) Drain Efciency
(%)
330015.4 - j10.3 2.9 - j2.5 1.7 10.9 19
340015.0 - j10.7 2.9 - j2.6 1.8 11.0 22
350014.4 - j11.2 2.8 - j2.7 1.7 10.9 21
360014.0 - j12.5 2.8 - j3.3 1.7 10.9 20
370013.5 - j13.4 3.0 - j3.8 1.8 10.8 20
380013.5 - j14.6 3.2 - j4.2 1.8 10.7 20
Figure 1 - Optimal Impedances for OFDM Linearity, VDS = 28V, IDQ = 200mA
Note 1: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth.
Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM.
NPT35015
Page 4 NDS-005 Rev 5, April 2013
NPT35015
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=200mA, TA=25°C unless otherwise noted.
Figure 2 - CW, pulsed CW, and PEP,
3500MHz, Constant Impedance States
Figure 3 - CW Power Sweep,
3500MHz
Figure 4 - Typical OFDM Performance
POUT = 1.5W
Figure 5 - Typical OFDM Performance
at 3500MHz versus IDQ
NPT35015
Page 5 NDS-005 Rev 5, April 2013
NPT35015
Figure 6 - Typical IMD3 Performance,
3500MHz
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=200mA, TA=25°C unless otherwise noted.
Figure 7 - Power Derating Curve
Typical Device Characteristics
VDS=28V, IDQ=200mA, TA=25°C unless otherwise noted.
Figure 8 - MTTF of NRF1 Devices
NPT35015
Page 6 NDS-005 Rev 5, April 2013
NPT35015
V DRAIN
RF OUT
V GATE
RF IN
Figure 9 - AD-006 Demonstration Board and Schematic
RFIN RFOUT
VGS VDS
AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design
802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% lled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF
Detailed design information and data available at www.nitronex.com
Name Value Tolerance Vendor Vendor Number
C1 0.1uF 10% Kemet C1206C104K1RACTU
C2, C7 0.01uF 10% AVX 12 061C103 K AT2 A
C3, C6 1000pF 10% Kemet C0805C102K1RACTU
C5 100pF 10% Kemet C0805C101K1RACTU
C8 1.0uF 10% Panasonic ECJ-5YB2A105M
C4, C9, C10,
C11, C14 5.6pF +/- 0.1pF ATC ATC600F5R6B
C12 0.3pF +/- 0.1pF ATC ATC600F0R3B
C13 0.6pF +/- 0.1pF ATC ATC60 0F0R6B
C15 150uF 20% Nichicon UPW1C151MED
C16 270uF 20% United Chemi-Con ELXY630ELL271MK25S
R1 10 ohm 1% Panasonic ERJ-2RKF10R0X
R2 0.33 ohm 1% Panasonic ERJ-6RQFR33V
PA1 -- -- -- NPT35015D
Substrate Rogers R04350, t = 30mil er = 3.5
Table 2: AD-006 Demonstration Board Bill of Materials
C12
0.3pF
R1
10
NPT35015
595mils
240mils
40mils
600mils
C10
5.6pF
C9
5.6pF
R2
0.33 C16
270uF
+
C7
0.01uF
C6
1000pF
C8
1.0uF
V
DS
68mils
240mils
RFOUT
C3
0.6pF
C14
5.6pF
35mils
520mils
VGS
RFIN
C3
1000pF
C2
0.01uF
C1
0.1uF
C15
150uF
C11
5.6pF
68mils
40mils
80mils
340mils
90mils
430mils
490mils
175mils
C5
100pF
+
C4
5.6pF
NPT35015
Page 7 NDS-005 Rev 5, April 2013
NPT35015
Figure 10 - Gain, Efciency, EVM at 3400MHz Figure 11 - Gain, Efciency, EVM at 3500MHz
AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design
802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% lled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF
Detailed design information and data available at www.nitronex.com
0
5
10
15
20
25
30
35
40
45
50
15 20 25 30 35 40
Pout (dBm)
Gain (dB), Drain Efficiency (%)
0
1
2
3
4
5
EVM (%)
Gain (dB)
Efficiency (%)
EVM (%)
0
5
10
15
20
25
30
35
40
45
50
15 20 25 30 35 40
Pout (dBm)
0
1
2
3
4
5
EVM (%)
Gain (dB)
Efficiency (%)
EVM (%)
0
5
10
15
20
25
30
35
40
45
50
15 20 25 30 35 40
Pout (dBm)
Gain (dB), Drain Efficiency (%)
0
1
2
3
4
5
EVM (%)
Gain (dB)
Efficiency (%)
EVM (%)
Figure 12 - Gain, Efciency, EVM at 3600MHz
NPT35015
Page 8 NDS-005 Rev 5, April 2013
NPT35015
Figure 13 - ETSI Mask Compliance in Nitronex
Demonstration Board at 3500MHz and POUT = 1.5W
-14
-24
-34
-44
-54
-64
-74
-84
-94
3489.50 Mhz 1.75 MHz/div 3510.50 MHz
Marker 1 -30.51 dBm
3.5 GHz
1
Figure 14 - Typical S11 and S21
AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design
802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% lled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF
Detailed design information and data available at www.nitronex.com
NPT35015
Page 9 NDS-005 Rev 5, April 2013
NPT35015
Ordering Information
Part Number Order Multiple Description
NPT35015DT 97 Tube; NPT35015 in D (PSOP2) Package
NPT35015DR 1500 Tape and Reel; NPT35015 in D (PSOP2) Package
1: To nd a Nitronex contact in your area, visit our website at http://www.nitronex.com
Inches Millimeters
Dim Min Max Min Max
A0.189 0.19 6 4.80 4.98
B0.150 0.157 3.81 3.99
C0.107 0.12 3 2.72 3.12
D0.071 0.870 1.80 22.1
E0.230 0.244 5.84 6.19
f0.050 BSC 1.270 BSC
F0.0138 0.0192 0.35 0.49
G0.055 0.061 1.40 1.55
G1 0.000 0.004 0.00 0.10
H0.075 0.098 1.91 2.50
L0.016 0.035 0.41 0.89
m 0° 8° 0° 8°
Figure 15 - D Package Dimensions and Pinout
Figure 16 - Mounting Footprint
1 2 3 4
8 6 57
9
Chamfer
1. NC
2. Gate
3. Gate
4. NC
7. Drain
6. Drain
5. NC
8. NC
9. Source Pad
(Bottom)
EBD
C
A
f
(6X)
F
(8X)
G1
SEATING
PLANE
G
m
SEATING PLANE
L
H
A/2
D/2
.150
Solder Paste
.080" X .120"
(Typ)
Solder Paste
.020" X .040"
(8X Typ)
.100
.105
.176.145.140
Heat Sink
Pedestal
PWB Cutout
R.016 (4X Typ)
.055
.180
.030
PWB Pad
(8X Typ)
Solder Mask
.005" Relief
(Typ)
1. Gate
2. Gate
3. Gate
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
9. Source Pad
(Bottom)
NPT35015
Page 10 NDS-005 Rev 5, April 2013
NPT35015
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex, LLC reserves the right to make corrections, modications, enhancements, improvements and other changes to
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before placing orders and should verify that such information is current and complete. All
products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest
information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronex warrants performance of its packaged semiconductor or die to the specications applicable at the time of sale in
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their
product and applications using Nitronex semiconductor products or services. To minimize the risks associated with
customer products and applications, customers should provide adequate design and operating safeguards.
Nitronex does not warrant or represent that any license, either express or implied, is granted under any Nitronex patent right,
copyright, mask work right, or other Nitronex intellectual property right relating to any combination, machine or process in
which Nitronex products or services are used.
Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the
information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the
contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements.
Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical
implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex,
LLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex, LLC, its
ofcers, employees, subsidiaries, afliates, distributors, and its successors harmless against all claims, costs, damages,
and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, notwithstanding if such claim alleges that Nitronex was negligent
regarding the design or manufacture of said products.
Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC.
All other product or service names are the property of their respective owners.
© Nitronex, LLC 2012. All rights reserved.