DATA SH EET
Product specification
File under Discrete Semiconductors, SC07 April 1995
DISCRETE SEMICONDUCTORS
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
April 1995 2
Philips Semiconductors Product specification
N-channel FETs PMBF4391;
PMBF4392; PMBF4393
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic
microminiature envelope intended for
application in thick and thin-film
circuits. The transistors are intended
for low-power chopper or switching
applications in industry.
PINNING
Note
1. Drain and source are
interchangeable.
Marking code
1 = drain
2 = source
3 = gate
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
PMBF4391 PMBF4392 PMBF4393
Drain-source voltage ±VDS max. 40 40 40 V
Drain current
VDS = 20 V; VGS =0 I
DSS >50 25 5 mA
Gate-source cut-off voltage
VDS = 20 V; ID= 1 nA −V(P)GS >4 2 0.5 V
<10 5 3 V
Drain-source resistance (on) at f = 1 kHz
ID= 0; VGS =0 R
ds on <30 60 100 Ω
Feedback capacitance at f = 1 MHz
−VGS = 12 V; VDS =0 C
rs <3.5 3.5 3.5 pF
Turn-off time
VDD = 10 V; VGS =0
I
D= 12 mA; −VGSM = 12 V toff <20 −−ns
ID= 6 mA; −VGSM = 7 V toff <−35 −ns
ID= 3 mA; −VGSM = 5 V toff <−−50 ns
April 1995 3
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
CHARACTERISTICS
Tj=25°C unless otherwise specified
Drain-source voltage ±VDS max. 40 V
Drain-gate voltage VDGO max. 40 V
Gate-source voltage −VGSO max. 40 V
Gate current (DC) IGmax. 50 mA
Total power dissipation up to Tamb =40°C(1) Ptot max. 250 mW
Storage temperature range Tstg −65 to +150 °C
Junction temperature Tjmax. 150 °C
From junction to ambient(1) Rth j-a = 430 K/W
Gate-source voltage
IG= 1 mA; VDS = 0 VGSon <1V
Gate-source cut-off current
VDS = 0 V; −VGS = 20 V −IGSS <0.1 nA
VDS = 0 V; −VGS = 20 V; Tamb = 150 °C−IGSS <0.2 µA
PMBF4391 PMBF4392 PMBF4393
Drain current
VDS = 20 V; VGS =0 I
DSS >
<50
150 25
75 5
30 mA
mA
Gate-source breakdown voltage
−IG=1µA; VDS =0 −V
(BR)GSS >40 40 40 V
Gate-source cut-off voltage
ID= 1 nA; VDS = 20 V −V(P)GS >
<4
10 2
50.5
3V
V
Drain-source voltage (on)
ID= 12 mA; VGS =0 V
DSon <0.4 −−V
I
D
= 6 mA; VGS =0 V
DSon <0.4 −V
ID= 3 mA; VGS =0 V
DSon <− −0.4 V
Drain-source resistance (on)
ID= 0; VGS = 0; f = 1 kHz; Tamb =25°Cr
ds on <30 −100 Ω
Drain cut-off current
−VGS = 12 V VDS = 20 V IDSX <0.1 −−nA
−VGS =7 V I
DSX <− 0.1 −nA
−VGS =5 V I
DSX <− −0.1 nA
−VGS = 12 V VDS = 20 V; Tamb = 150 °CIDSX <0.2 −−µA
−V
GS =7 V I
DSX <− 0.2 −µA
−V
GS =5 V I
DSX <− −0.2 µA
April 1995 4
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
Note
1. Mounted on a ceramic substrate of 8 mm ×10 mm ×0,7 mm.
y-parameters (common source)
VDS = 20 V; VGS = 0; f = 1 MHz; Tamb =25°CPMBF4391 PMBF4392 PMBF4393
Input capacitance Cis <14 14 14 pF
Feedback capacitance
−VGS = 12 V ; VDS =0 C
rs <3.5 −−pF
−VGS =7 V ;V
DS =0 C
rs <− 3.5 −pF
−VGS =5 V ;V
DS =0 C
rs <− −3.5 pF
Switching times
VDD = 10 V ; VDS =0
Conditions IDand −VGSoff ID=12 63mA
−V
GS off =12 75V
R
L= 750 1550 3150 Ω
Rise time tr<555ns
Turn on time ton <15 15 15 ns
Fall time tf<15 20 30 ns
Turn off time toff <20 35 50 ns
Fig.2 Switching times waveforms.
handbook, full pagewidth
MBK288
−VGS off toff
tf
VGS = 0 V
Vi
Vo
10%
90%
90%
10%
ton
tr
April 1995 5
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
Fig.3 Test circuit.
handbook, halfpage
MBK289
50 Ω
RL
DUT
10 µF
1 µF
VDD 10 nF
50 Ω
SAMPLING
SCOPE
50 Ω
Pulse generator:
tr<0.5 ns
tf<0.5 ns
tp= 100 µs
δ= 0.01
Oscilloscope:
Ri=50Ω
Fig.4 Power derating curve.
handbook, halfpage
0Tamb (°C)
Ptot
(mW)
300
200
100
040 200
80 120 160
MDA245
April 1995 6
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
April 1995 7
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
