VEMD5080X01-GS15 - VISHAY - Product.Network

VEMD5080X01

www.vishay.com Vishay Semiconductors

Rev. 1.1, 19-Jan-17 1Document Number: 84386

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Silicon PIN Photodiode

DESCRIPTION

VEMD5080X01 is a high speed and high sensitive PIN

photodiode with enhanced sensitivity for visible light. It is a

low profile surface-mount device (SMD) including the chip

with a 7.5 mm2 sensitive area detecting visible and near

infrared radiation.

FEATURES

• Package type: surface-mount

• Package form: top view

• Dimensions (L x W x H in mm): 5 x 4 x 0.9

• Radiant sensitive area (in mm2): 7.5

• AEC-Q101 qualified

• Enhanced sensitivity for visible light

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity: ϕ = ± 65°

• Floor life: 72 h, MSL 4, according to J-STD-020

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• High speed photo detector

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

PRODUCT SUMMARY

COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm)

VEMD5080X01 45 ± 65 350 to 1100

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VEMD5080X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view

VEMD5080X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR20 V

Power dissipation Tamb ≤ 25 °C PV215 mW

Junction temperature Tj110 °C

Operating temperature range Tamb -40 to +110 °C

Storage temperature range Tstg -40 to +110 °C

Soldering temperature According to reflow solder profile Fig. 8 Tsd 260 °C

Thermal resistance junction / ambient RthJA 350 K/W

ESD safety HBM ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESDHBM ≥ 2 kV

VEMD5080X01

www.vishay.com Vishay Semiconductors

Rev. 1.1, 19-Jan-17 2Document Number: 84386

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.

Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 50 mA VF-0.91.3V

Breakdown voltage IR = 100 μA, E = 0 V(BR) 20 - - V

Reverse dark current VR = 10 V, E = 0 Iro - 0.2 10 nA

Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD-80-pF

VR = 3 V, f = 1 MHz, E = 0 CD-3040pF

Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo- 320 - mV

Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo --3.0-mV/K

Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik-45-μA

Temperature coefficient of IkEe = 1 mW/cm2, λ = 950 nm TKIk -0.1-%/K

Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 33 45 53 μA

Ee = 0.2 mW/cm2, λ = 525 nm, VR = 5 V Ira 3.1 5.0 6.6 μA

Angle of half sensitivity ϕ-± 65-deg

Wavelength of peak sensitivity λp- 950 - nm

Range of spectral bandwidth λ0.1 - 350 to 1100 - nm

Rise time VR = 10 V, RL = 1 kΩ, λ = 830 nm tr-70-ns

Fall time VR = 10 V, RL = 1 kΩ, λ = 830 nm tf-70-ns

0.1

100

1000

020406080100

Iro - Reverse Dark Current (nA)

Tamb - Ambient Temperature (°C)

VR= 10 V

0.8

0.9

1.0

1.1

1.2

-40-200 20406080100

Ira rel - Relative Reverse Light Current

Tamb - Ambient Temperature (°C)

Ee= 1 mW/cm2

λ= 950 nm

VR= 5 V

VEMD5080X01

www.vishay.com Vishay Semiconductors

Rev. 1.1, 19-Jan-17 3Document Number: 84386

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Reverse Light Current vs. Irradiance

Fig. 4 - Reverse Light Current vs. Reverse Voltage

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Fig. 6 - Relative Spectral Sensitivity vs. Wavelength

Fig. 7 - Relative Sensitivity vs. Angular Displacement

0.1

100

0.01 0.1 1

Ira - Reverse Light Current (μA)

Ee- Irradiance (mW/cm2)

VR= 5 V, λ= 950 nm

0.1

100

0.1 1 10 100

Ira - Reverse Light Current (μA)

VR- Reverse Voltage (V)

0.01 mW/cm2

0.05 mW/cm2

0.1 mW/cm2

0.5 mW/cm2

1.0 mW/cm2

λ= 950 nm

0.001 0.01 0.1 1 10

Cp- Capacitance (pF)

VR- Reverse Voltage (V)

f = 1 MHz, E = 0

0.2

0.4

0.6

0.8

1.0

400 500 600 700 800 900 1000 1100

S(λ)rel - Relative Spectral Sensitivity

λ- Wavelength (nm)

0.4 0.2 00.6

0.9

0.8

0°

30°

10° 20°

40°

50°

60°

70°

80°

0.7

1.0

ϕ - Angular Displacement

Srpel - Relative Sensitivity

VEMD5080X01

www.vishay.com Vishay Semiconductors

Rev. 1.1, 19-Jan-17 4Document Number: 84386

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters

5.2

Center of device

Recommended footprint

4.1

Optical

window

Top view

Bottom view

Detail X ( 20 : 1 )

0.2

0.1

2.1

1.8

Optical

center

1.8

Detail X

0.9 ± 0.15

Tie bar, electrically connected to cathode

0.8 1.2

0.9

1.2

2.5

0.8

0.6 (4 x)

3.1

Exposed pad

(cathode)

0.4 (4 x)

Cathode

0.6

Anode

0.65

0.8

Drawing- No.: 6.550-5329.01-4

Issue: 3; 11.11.2016

Not indicated tolerances ± 0.1 Technical drawings

according to DIN

specication

VEMD5080X01

www.vishay.com Vishay Semiconductors

Rev. 1.1, 19-Jan-17 5Document Number: 84386

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE AND REEL DIMENSIONS in millimeters

Drawing-No.: 9.800-5129.01-4;

Issue: 1; 20.07.2015

B-B ( 2 : 1 )

Reel-design is reperesentative for different types

Unreel direction

Label posted

here

0.3

1.42

Ø 1.5

Ø 1.55

1.75

5.5

Anode

VEMD5080X01

www.vishay.com Vishay Semiconductors

Rev. 1.1, 19-Jan-17 6Document Number: 84386

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SOLDER PROFILE

Fig. 8 - Lead (Pb)-free Reflow Solder Profile

According to J-STD-020D

DRYPACK

Devices are packed in moisture barrier bags (MBB) to

prevent the products from moisture absorption during

transportation and storage. Each bag contains a desiccant.

FLOOR LIFE

Time between soldering and removing from MBB must not

exceed the time indicated in J-STD-020:

Moisture sensitivity: level 4

Floor life: 72 h

Conditions: Tamb < 30 °C, RH < 60 %

DRYING

In case of moisture absorption devices should be

baked before soldering. Conditions see J-STD-020 or

recommended conditions:

192 h at 40 °C (+ 5 °C), RH < 5 %

96 h at 60 °C (+ 5 °C), RH < 5 %

100

150

200

250

300

0 50 100 150 200 250 300

Time (s)

Temperature (°C)

240 °C 245 °C

max. 260 °C

max. 120 s max. 100 s

217 °C

max. 30 s

max. ramp up 3 °C/s

max. ramp down 6 °C/s

19841

255 °C

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Revision: 01-Jan-2021 1Document Number: 91000

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